X-On Electronics has gained recognition as a prominent supplier of SH8M13GZETB MOSFETs across the USA, India, Europe, Australia, and various other global locations. SH8M13GZETB MOSFETs are a product manufactured by ROHM. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SH8M13GZETB ROHM

SH8M13GZETB electronic component of ROHM
SH8M13GZETB ROHM
SH8M13GZETB MOSFETs
SH8M13GZETB  Semiconductors

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See Product Specifications
Part No. SH8M13GZETB
Manufacturer: ROHM
Category: MOSFETs
Description: MOSFET 4V Drive Nch+Pch Si MOSFET
Datasheet: SH8M13GZETB Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 1.2875 ea
Line Total: USD 1.29 
Availability - 6342
Ship by Thu. 03 Apr to Mon. 07 Apr
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
6342
Ship by Thu. 03 Apr to Mon. 07 Apr
MOQ : 1
Multiples : 1
1 : USD 1.2875
10 : USD 0.8832
100 : USD 0.649
500 : USD 0.5654
1000 : USD 0.473
2500 : USD 0.4521
5000 : USD 0.4521

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Transistor Type
Brand
Forward Transconductance - Min
Fall Time
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Cnhts
Hts Code
Mxhts
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the SH8M13GZETB from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SH8M13GZETB and other electronic components in the MOSFETs category and beyond.

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Data Sheet 4V Drive Nch + Pch MOSFET SH8M13 Structure Dimensions (Unit : mm) Silicon N-channel MOSFET/ SOP8 Silicon P-channel MOSFET (8) (5) Features 1) Low on-resistance. 2) Built-in G-S Protection Diode. (1) (4) 3) Small Surface Mount Package (SOP8). Application Switching Packaging specifications Inner circuit Package Taping (8) (7) (6) (5) Type Code TB Basic ordering unit (pieces) 2500 SH8M13 2 2 (1) Tr1 Source (2) Tr1 Gate (3) Tr2 Source 1 1 (4) Tr2 Gate Absolute maximum ratings (Ta = 25C) (5) Tr2 Drain (1) (2) (3) (4) (6) Tr2 Drain Limits Parameter Symbol Unit (7) Tr1 Drain 1 ESD PROTECTION DIODE Tr1 : N-ch Tr2 : P-ch (8) Tr1 Drain 2 BODY DIODE Drain-source voltage V 30 30 V DSS Gate-source voltage V 20 20 V GSS Continuous I 6.0 7.0 A D Drain current *1 Pulsed I 24 28 A DP Continuous I 1.6 1.6 A Source current s *1 (Body Diode) Pulsed I 24 28 A sp 2.0 W / TOTAL *2 Total power dissipation P D 1.4 W / ELEMENT Channel temperature Tch 150 C Range of storage temperature Tstg 55 to 150 C *1 Pw10s, Duty cycle 1% *2 Mounted on a ceramic board. www.rohm.com 2011 ROHM Co., Ltd. All rights reserved. 2011.05 - Rev.A 1/10Data Sheet SH8M13 Electrical characteristics (Ta = 25 C) <Tr1(Nch)> Parameter Symbol Min. Typ. Max. Unit Conditions Gate-source leakage I - - 10 AV =20V, V =0V GSS GS DS Drain-source breakdown voltage V 30 - - V I =1mA, V =0V (BR)DSS D GS Zero gate voltage drain current I -- 1 AV =30V, V =0V DSS DS GS Gate threshold voltage V 1.0 - 2.5 V V =10V, I =1mA GS (th) DS D -22 31 I =6.0A, V =10V D GS Static drain-source on-state * R m DS (on) -30 42 I =6.0A, V =4.5V D GS resistance -35 49 I =6.0A, V =4.0V D GS * Forward transfer admittance l Y l 2.5 - - S V =10V, I =6.0A fs DS D Input capacitance C - 350 - pF V =10V iss DS Output capacitance C - 160 - pF V =0V oss GS Reverse transfer capacitance C - 65 - pF f=1MHz rss Turn-on delay time t -8 - nsI =3.0A, V 15V ** d(on) D DD Rise time t - 16 - ns V =10V ** r GS Turn-off delay time t ** - 30 - ns R =5 d(off) L Fall time t ** -7 - nsR =10 f G Total gate charge Q ** - 5.0 - nC I =6.0A g D Gate-source charge Q ** - 1.4 - nC V 15V gs DD Gate-drain charge Q - 1.9 - nC V =5V ** gd GS *Pulsed Body diode characteristics (Source-Drain) (Ta = 25 C) Parameter Symbol Min. Typ. Max. Unit Conditions * Forward Voltage V - - 1.2 V I =6.0A, V =0V SD s GS *Pulsed www.rohm.com 2011 ROHM Co., Ltd. All rights reserved. 2011.05 - Rev.A 2/10

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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