X-On Electronics has gained recognition as a prominent supplier of CMKDM8005 TR MOSFETs across the USA, India, Europe, Australia, and various other global locations. CMKDM8005 TR MOSFETs are a product manufactured by Central Semiconductor. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

CMKDM8005 TR Central Semiconductor

CMKDM8005 TR electronic component of Central Semiconductor
CMKDM8005 TR Central Semiconductor
CMKDM8005 TR MOSFETs
CMKDM8005 TR  Semiconductors

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See Product Specifications
Part No. CMKDM8005 TR
Manufacturer: Central Semiconductor
Category: MOSFETs
Description: MOSFET DUAL P-CHANNEL MOSFET
Datasheet: CMKDM8005 TR Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.6237 ea
Line Total: USD 0.62 
Availability - 32318
Ship by Mon. 07 Apr to Wed. 09 Apr
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
32318
Ship by Mon. 07 Apr to Wed. 09 Apr
MOQ : 1
Multiples : 1
1 : USD 0.6237
10 : USD 0.4712
100 : USD 0.3278
500 : USD 0.2541
1000 : USD 0.2013
3000 : USD 0.1848
6000 : USD 0.1749
9000 : USD 0.1694

   
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We are delighted to provide the CMKDM8005 TR from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the CMKDM8005 TR and other electronic components in the MOSFETs category and beyond.

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CMKDM8005 SURFACE MOUNT SILICON www.centralsemi.com DUAL P-CHANNEL DESCRIPTION: ENHANCEMENT-MODE The CENTRAL SEMICONDUCTOR CMKDM8005 MOSFET consists of dual P-Channel enhancement-mode silicon MOSFETs designed for high speed pulsed amplifier and driver applications. These MOSFETs offer very low r and low threshold voltage. DS(ON) MARKING CODE: C85M FEATURES: SOT-363 CASE ESD protection up to 1800V (Human Body Model) 350mW power dissipation APPLICATIONS: Very low r DS(ON) Load switch/Level shifting Low threshold voltage Battery charging Logic level compatible Boost switch Electro-luminescent backlighting Small, SOT-363 surface mount package MAXIMUM RATINGS: (T =25C) SYMBOL UNITS A Drain-Source Voltage V 20 V DS Gate-Source Voltage V 8.0 V GS Continuous Drain Current (Steady State) I 650 mA D Continuous Source Current (Body Diode) I 250 mA S Maximum Pulsed Drain Current I 1.0 A DM Power Dissipation P 350 mW D Operating and Storage Junction Temperature T , T -65 to +150 C J stg Thermal Resistance 357 C/W JA ELECTRICAL CHARACTERISTICS PER TRANSISTOR: (T =25C unless otherwise noted) A SYMBOL TEST CONDITIONS MIN TYP MAX UNITS I , I V =4.5V, V=0 10 A GSSF GSSR GS DS I V =16V, V=0 100 nA DSS DS GS BV V =0, I=250A 20 V DSS GS D V V =V , I=250A 0.5 1.0 V GS(th) DS GS D V V =0, I=250mA 1.1 V SD GS S r V =4.5V, I=350mA 0.25 0.36 DS(ON) GS D r V =2.5V, I=300mA 0.37 0.5 DS(ON) GS D r V =1.8V, I=150mA 0.8 DS(ON) GS D g V =10V, I=200mA 0.2 S FS DS D C V =16V, V =0, f=1.0MHz 25 pF rss DS GS C V =16V, V =0, f=1.0MHz 100 pF iss DS GS C V =16V, V =0, f=1.0MHz 21 pF oss DS GS R3 (3-June 2013)CMKDM8005 SURFACE MOUNT SILICON DUAL P-CHANNEL ENHANCEMENT-MODE MOSFET ELECTRICAL CHARACTERISTICS PER TRANSISTOR - Continued: (T =25C unless otherwise noted) A SYMBOL TEST CONDITIONS TYP MAX UNITS Q V =10V, V =4.5V, I =200mA g(tot) DS GS D 1.2 nC Q V =10V, V =4.5V, I =200mA gs DS GS D 0.24 nC Q V =10V, V =4.5V, I =200mA gd DS GS D 0.36 nC t V =10V, V =4.5V, I =200mA, R =10 38 ns on DD GS D G t V =10V, V =4.5V, I =200mA, R =10 48 ns off DD GS D G SOT-363 CASE - MECHANICAL OUTLINE PIN CONFIGURATION LEAD CODE: 1) Source Q1 2) Gate Q1 3) Drain Q2 4) Source Q2 5) Gate Q2 6) Drain Q1 MARKING CODE: C85M R3 (3-June 2013) www.centralsemi.com

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
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CENTRAL SEMICONDUCTOR
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Central Semiconductor Corp.
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