X-On Electronics has gained recognition as a prominent supplier of RT1A045APTCR MOSFETs across the USA, India, Europe, Australia, and various other global locations. RT1A045APTCR MOSFETs are a product manufactured by ROHM. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

RT1A045APTCR ROHM

RT1A045APTCR electronic component of ROHM
RT1A045APTCR ROHM
RT1A045APTCR MOSFETs
RT1A045APTCR  Semiconductors

Images are for reference only
See Product Specifications
Part No. RT1A045APTCR
Manufacturer: ROHM
Category: MOSFETs
Description: MOSFET 1.5V Drive Pch MOSFET
Datasheet: RT1A045APTCR Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 1.0463 ea
Line Total: USD 1.05 
Availability - 478
Ship by Thu. 01 May to Mon. 05 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
478
Ship by Thu. 01 May to Mon. 05 May
MOQ : 1
Multiples : 1
1 : USD 1.0463
10 : USD 0.8484
500 : USD 0.3938
1000 : USD 0.3564
3000 : USD 0.2519
6000 : USD 0.2376

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Series
Brand
Factory Pack Quantity :
Configuration
Transistor Type
Forward Transconductance - Min
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the RT1A045APTCR from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RT1A045APTCR and other electronic components in the MOSFETs category and beyond.

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RT1A045AP Datasheet Pch -12V -4.5A Power MOSFET llOutline TSST8 V -12V DSS R (Max.) 30m DS(on) I 4.5A D P 1.25W D llInner circuit llFeatures 1) Low on - resistance. 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (TSST8). 4) Pb-free lead plating RoHS compliant llPackaging specifications Embossed Packing Tape Reel size (mm) 180 llApplication Tape width (mm) 8 Type DC/DC converters Basic ordering unit (pcs) 3000 Taping code TR Marking SC llAbsolute maximum ratings (T = 25C) a Parameter Symbol Value Unit V Drain - Source voltage -12 V DSS I Continuous drain current 4.5 A D *2 I Pulsed drain current 18 A D,pulse V Gate - Source voltage 0 to -8 V GSS *3 P 1.25 W D Power dissipation *4 P 0.65 W D T Junction temperature 150 j Range of storage temperature T -55 to +150 stg www.rohm.com 2015 ROHM Co., Ltd. All rights reserved. 1/11 20150730 - Rev.001 RT1A045AP Datasheet llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. - - 100 /W *3 R Thermal resistance, junction - ambient thJA - - 192 /W llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = -1mA -12 - - V (BR)DSS GS D voltage V I = -1mA (BR)DSS D Breakdown voltage - -12 - mV/ temperature coefficient T referenced to 25 j Zero gate voltage I V = -12V, V = 0V - - -10 A DSS DS GS drain current I Gate - Source leakage current V = -8V, V = 0V - - -10 A GSS GS DS V Gate threshold voltage V = -6V, I = -1mA -0.3 - -1.0 V GS(th) DS D V I = -1mA GS(th) D Gate threshold voltage - 2.6 - mV/ temperature coefficient T referenced to 25 j V = -4.5V, I = -4.5A - 22 30 GS D V = -2.5V, I = -2.2A - 28 39 GS D Static drain - source *5 R V = -1.8V, I = -2.2A - 38 57 m DS(on) GS D on - state resistance V = -1.5V, I = 0.9A - 50 100 GS D V = -4.5V, I = -4.5A, T = 125 GS D j - 34 48 R Gate input resistance f = 1MHz, open drain - 20 - G Forward Transfer *5 Y V = -6V, I = -4.5A 5.5 11 - S fs DS D Admittance *1 Limited only by maximum temperature allowed. *2 Pw 10s, Duty cycle 1% *3 Mounted on a ceramic board (30300.8mm) *4 Mounted on a FR4(20200.8mm) *5 Pulsed www.rohm.com 2015 ROHM Co., Ltd. All rights reserved. 2/11 20150730 - Rev.001

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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