LOTNo. LOTNo. SCH1433 Power MOSFET 20V, 64m , 3.5A, Single N-Channel This low-profile high-power MOSFET is produced using ON Semiconductors trench technology, which is specifically designed to www.onsemi.com minimize gate charge and ultra low on resistance. This device is suitable for applications with low gate charge driving or ultra low on resistance requirements. Features Low On-Resistance V R (on) Max I DSS DS D Max Low Capacitance 64m 4.5V 1.8V drive 20V 95m 2.5V 3.5A ESD Diode-Protected Gate 149m 1.8V Pb-Free, Halogen Free and RoHS compliance Ultra small package SCH6 (1.6mm1.6mm0.56mmt) ELECTRICAL CONNECTION N-Channel Typical Applications Load Switch 1,2,5,6 SPECIFICATIONS ABSOLUTE MAXIMUM RATING at Ta = 25C (Note 1) 1:Drain Parameter SymbolValue Unit 2:Drain 3 3:Gate Drain to Source Voltage V 20V DSS 4:Source 5:Drain Gate to Source Voltage V 10 V GSS 6:Drain Drain Current (DC) I 3.5A D 4 Drain Current (Pulse) I 14 A DP PW 10s, duty cycle 1% Power Dissipation PACKING TYPE : TL MARKING When mounted on ceramic substrate P 0.8 W D 2 (900mm 0.8mm) ZJ Junction Temperature Tj 150 C Storage Temperature Tstg 55 to +150 C TL Note 1 : Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. ORDERING INFORMATION See detailed ordering and shipping THERMAL RESISTANCE RATINGS information on page 5 of this data sheet. Parameter SymbolValue Unit Junction to Ambient When mounted on ceramic substrate R 156.2 C/W JA 2 (900mm 0.8mm) Semiconductor Components Industries, LLC, 2015 1 Publication Order Number : September 2015 - Rev. 2 SCH1435/D SCH1433 ELECTRICAL CHARACTERISTICS at Ta = 25C (Note 2) Value Parameter Symbol Conditions Unit min typ max Drain to Source Breakdown Voltage V( ) I =1mA, V=0V 20 V BR DSS D GS Zero-Gate Voltage Drain Current I V =20V, V=0V 1 A DSS DS GS Gate to Source Leakage Current I V =8V, V=0V 10 A GSS GS DS Gate Threshold Voltage V (th) V =10V, I=1mA 0.4 1.3V GS DS D Forward Transconductance g V =10V, I=1.5A 1.68 2.8 S FS DS D R (on)1 I =1.5A, V=4.5V 49 64m DS D GS Static Drain to Source On-State 68 95 R (on)2 I =1A, V =2.5V m DS D GS Resistance R (on)3 I =0.5A, V =1.8V 99 149 m DS D GS Input Capacitance Ciss 260 pF Output Capacitance Coss 65 pF V =10V, f=1MHz DS Reverse Transfer Capacitance Crss 50 pF Turn-ON Delay Time t (on) 6.2 ns d Rise Time t 19 ns r See specified Test Circuit Turn-OFF Delay Time 30 ns t (off) d Fall Time 28 ns t f Total Gate Charge Qg 2.8 nC Gate to Source Charge Qgs 0.6 nC V =15V, V =4.5V, I =3.5A DS GS D Gate to Drain Miller Charge Qgd 0.9 nC Forward Diode Voltage V SD I =3.5A, V=0V 0.85 1.2V S GS Note 2 : Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. Switching Time Test Circuit V V =10V DD IN 4.5V 0V I =1.5A D V IN R =6.67 L V D OUT PW=10s D.C.1% G SCH1433 P.G 50 S www.onsemi.com 2