LOTNo. LOTNo. SCH1436 Power MOSFET 30V, 180m , 1.8A, Single N-Channel This low-profile high-power MOSFET is produced using ON Semiconductors trench technology, which is specifically designed to www.onsemi.com minimize gate charge and ultra low on resistance. This device is suitable for applications with low gate charge driving or ultra low on resistance requirements. Features Low On-Resistance V R (on) Max I DSS DS D Max 4V drive 180m 10V 30V 1.8A Low Capacitance 330m 4V Pb-Free, Halogen Free and RoHS compliance Ultra small package SCH6 (1.6mm1.6mm0.56mmt) ELECTRICAL CONNECTION N-Channel Typical Applications Load Switch 1,2,5,6 SPECIFICATIONS ABSOLUTE MAXIMUM RATING at Ta = 25C (Note 1, 2) 1:Drain 2:Drain Parameter SymbolValue Unit 3 3:Gate Drain to Source Voltage V 30V DSS 4:Source 5:Drain Gate to Source Voltage V 20 V GSS 6:Drain Drain Current (DC) I 1.8A D 4 Drain Current (Pulse) I 7.2 A DP PW 10s, duty cycle 1% PACKING TYPE : TL MARKING Power Dissipation When mounted on ceramic substrate P 0.8 W D 2 (900mm 0.8mm) ZM Junction Temperature Tj 150 C Storage Temperature Tstg 55 to +150 C TL Note 1 : Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 2 : This product is designed to ESD immunity<200V*, so please take care when ORDERING INFORMATION handling. See detailed ordering and shipping *Machine Model information on page 5 of this data sheet. THERMAL RESISTANCE RATINGS Parameter SymbolValue Unit Junction to Ambient R 156.2 C/W When mounted on ceramic substrate JA 2 (900mm 0.8mm) Semiconductor Components Industries, LLC, 2015 1 Publication Order Number : August 2015 - Rev. 3 SCH1436/D SCH1436 ELECTRICAL CHARACTERISTICS at Ta = 25C (Note 3) Value Parameter Symbol Conditions Unit min typ max Drain to Source Breakdown Voltage V( ) I =1mA, V=0V 30 V BR DSS D GS Zero-Gate Voltage Drain Current I V =30V, V=0V 1 A DSS DS GS Gate to Source Leakage Current I V =16V, V=0V 10 A GSS GS DS Gate Threshold Voltage V (th) V =10V, I=1mA 1.2 2.6V GS DS D Forward Transconductance g V =10V, I=0.9A 1.1 S FS DS D R (on)1 I =0.9A, V=10V 135 180m Static Drain to Source On-State DS D GS Resistance 230 330 R (on)2 I =0.5A, V =4V m DS D GS Input Capacitance Ciss 88 pF Output Capacitance Coss V =10V, f=1MHz 19 pF DS Reverse Transfer Capacitance Crss 11 pF Turn-ON Delay Time t (on) 3.4 ns d Rise Time t 4.0 ns r See specified Test Circuit Turn-OFF Delay Time t (off) 10.4 ns d Fall Time 4.2 ns t f Total Gate Charge Qg 2.0 nC Gate to Source Charge Qgs V =10V, V =10V, I =1.8A 0.33 nC DS GS D Gate to Drain Miller Charge Qgd 0.29 nC V Forward Diode Voltage SD I =1.8A, V=0V 0.86 1.2V S GS Note 3 : Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. Switching Time Test Circuit V V =15V DD IN 10V 0V I =0.9A D V IN R =16.7 L V D OUT PW=10s D.C.1% G SCH1436 P.G 50 S www.onsemi.com 2