X-On Electronics has gained recognition as a prominent supplier of SCT3080KLGC11 SiC MOSFETs across the USA, India, Europe, Australia, and various other global locations. SCT3080KLGC11 SiC MOSFETs are a product manufactured by ROHM. We provide cost-effective solutions for SiC MOSFETs, ensuring timely deliveries around the world.

SCT3080KLGC11 ROHM

Name: SCT3080KLGC11
Brand: ROHM
SKU: SCT3080KLGC11_ROHM
Availability: InStock
Rating: 5 (11 reviews)

SCT3080KLGC11 electronic component of ROHM

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See Product Specifications

Part No.	SCT3080KLGC11
Manufacturer:	ROHM
Category:	SiC MOSFETs
Description:	SiC MOSFETs N-Ch 1200V SiC 31A 80mOhm TrenchMOS
Datasheet:	SCT3080KLGC11 Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

1: USD 21.132 ea
Line Total: USD 21.13

Availability - 576
Ship by Wed. 30 Apr to Fri. 02 May

MOQ: 1 Multiples: 1
Pack Size: 1

SCT3080KLGC11 More Buying Options & Price Grid(s)

Please wait...

Availability Price Buy Price Quantity

514

Ship by Fri. 02 May to Thu. 08 May

MOQ : 30
Multiples : 30

30 : USD 18.798
60 : USD 17.975
90 : USD 17.9125
120 : USD 17.8625
150 : USD 17.725

576

Ship by Wed. 30 Apr to Fri. 02 May

MOQ : 1
Multiples : 1

1 : USD 21.132
10 : USD 18.733
25 : USD 14.905
100 : USD 14.322

436

Ship by Fri. 02 May to Thu. 08 May

MOQ : 8
Multiples : 1

8 : USD 22.7154
10 : USD 22.3205
270 : USD 18.3872

349

Ship by Fri. 02 May to Thu. 08 May

MOQ : 30
Multiples : 30

30 : USD 21.462

297

Ship by Fri. 02 May to Thu. 08 May

MOQ : 8
Multiples : 1

8 : USD 22.7154
10 : USD 22.3205
270 : USD 18.3872

97

Ship by Fri. 02 May to Thu. 08 May

MOQ : 7
Multiples : 1

7 : USD 22.7154
10 : USD 22.3205

116

Ship by Fri. 02 May to Thu. 08 May

MOQ : 5
Multiples : 1

5 : USD 24.57
10 : USD 23.4
50 : USD 16.25
100 : USD 15.25

Specifications

Manufacturer

ROHM ROHM

Product Category

SiC MOSFETs SiC MOSFETs

RoHS - XON

Y Y

Mounting Style

Through Hole Through Hole

Transistor Polarity

N - Channel N - Channel

Number of Channels

1 Channel 1 Channel

Vds - Drain-Source Breakdown Voltage

1200 V 1200 V

Id - Continuous Drain Current

31 A 31 A

Rds On - Drain-Source Resistance

80 mOhms 80 mOhms

Vgs - Gate-Source Voltage

- 4 v , 22 V - 4 v , 22 V

Vgs th - Gate-Source Threshold Voltage

2.7 V 2.7 V

Qg - Gate Charge

60 nC 60 nC

Minimum Operating Temperature

- 55 C - 55 C

Maximum Operating Temperature

+ 175 C + 175 C

Pd - Power Dissipation

165 W 165 W

Channel Mode

Enhancement Enhancement

Configuration

Single Single

Package / Case

TO - 247N - 3 TO - 247N - 3

Packaging

Tube Tube

Series

Sct3x Sct3x

Technology

Sic Sic

Transistor Type

1 N - Channel 1 N - Channel

Brand

Rohm Semiconductor Rohm Semiconductor

Forward Transconductance - Min

4.4 S 4.4 S

Fall Time

24 ns 24 ns

Product Type

Mosfet Mosfet

Rise Time

22 ns 22 ns

Factory Pack Quantity :

450 450

Subcategory

Mosfets Mosfets

Typical Turn-Off Delay Time

29 ns 29 ns

Typical Turn-On Delay Time

15 ns 15 ns

Notes:- Show Stocked Products With Similar Attributes.

SCT3080KLGC11 Alternative Parts

We are delighted to provide the SCT3080KLGC11 from our SiC MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SCT3080KLGC11 and other electronic components in the SiC MOSFETs category and beyond.

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Additional Infomation About Product

The SCT3080KLGC11 MOSFET is a high-performance switching power device manufactured by ROHM Semiconductor. It is based on an advanced Silicon Carbide (SiC) process, and features a N-Channel 1200 Volt (V) TrenchMOS design for high-speed switching and low on-resistance (Ohm) of 80 mOhm. It is capable of handling a maximum of 31 Amps (A). This device is specially designed to offer extremely low switching losses, allowing higher efficiency power converters. Due to its low on-resistance and greater power capabilities, it is well suited for applications such as solar inverters, electric vehicles, and power supply designs. It also features an optimized gate structure to increase driving speed, reducing EMI noise and further improving efficiency.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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Availability	Price	Buy Price	Quantity
514 Ship by Fri. 02 May to Thu. 08 May MOQ : 30 Multiples : 30	30 : USD 18.798 60 : USD 17.975 90 : USD 17.9125 120 : USD 17.8625 150 : USD 17.725

576 Ship by Wed. 30 Apr to Fri. 02 May MOQ : 1 Multiples : 1	1 : USD 21.132 10 : USD 18.733 25 : USD 14.905 100 : USD 14.322

436 Ship by Fri. 02 May to Thu. 08 May MOQ : 8 Multiples : 1	8 : USD 22.7154 10 : USD 22.3205 270 : USD 18.3872

349 Ship by Fri. 02 May to Thu. 08 May MOQ : 30 Multiples : 30	30 : USD 21.462

297 Ship by Fri. 02 May to Thu. 08 May MOQ : 8 Multiples : 1	8 : USD 22.7154 10 : USD 22.3205 270 : USD 18.3872

97 Ship by Fri. 02 May to Thu. 08 May MOQ : 7 Multiples : 1	7 : USD 22.7154 10 : USD 22.3205

116 Ship by Fri. 02 May to Thu. 08 May MOQ : 5 Multiples : 1	5 : USD 24.57 10 : USD 23.4 50 : USD 16.25 100 : USD 15.25

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