X-On Electronics has gained recognition as a prominent supplier of SCT3080KLGC11 SiC MOSFETs across the USA, India, Europe, Australia, and various other global locations. SCT3080KLGC11 SiC MOSFETs are a product manufactured by ROHM. We provide cost-effective solutions for SiC MOSFETs, ensuring timely deliveries around the world.

SCT3080KLGC11 ROHM

Hot SCT3080KLGC11 electronic component of ROHM
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Part No.SCT3080KLGC11
Manufacturer: ROHM
Category: SiC MOSFETs
Description: SiC MOSFETs N-Ch 1200V SiC 31A 80mOhm TrenchMOS
Datasheet: SCT3080KLGC11 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 14.0686 ea
Line Total: USD 14.07 
Availability - 118
Ship by Thu. 05 Dec to Tue. 10 Dec
MOQ: 1  Multiples: 1
Pack Size: 1

 SCT3080KLGC11 More Buying Options & Price Grid(s)

Availability Price Quantity
601
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 30
Multiples : 30
30 : USD 16.588
60 : USD 16.588
90 : USD 16.588
150 : USD 16.588
300 : USD 16.588

118
Ship by Thu. 05 Dec to Tue. 10 Dec
MOQ : 1
Multiples : 1
1 : USD 14.0686
10 : USD 12.2391
30 : USD 11.1227
90 : USD 10.1898

743
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ : 1
Multiples : 1
1 : USD 19.371
10 : USD 16.357
25 : USD 16.016
50 : USD 15.631
100 : USD 15.268
250 : USD 14.905
450 : USD 14.905
900 : USD 14.322

436
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 7
Multiples : 1
7 : USD 22.3205
270 : USD 19.1228

407
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 30
Multiples : 30
30 : USD 25.2634
60 : USD 20.091

310
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 7
Multiples : 1
7 : USD 22.3205
270 : USD 19.1228

97
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 8
Multiples : 1
8 : USD 22.3205

119
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 2
Multiples : 1
2 : USD 23.5625
10 : USD 19.175
50 : USD 18.2
100 : USD 16.9

Specifications

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Transistor Polarity
Number of Channels
Vds - Drain-Source Breakdown Voltage
Id - Continuous Drain Current
Rds On - Drain-Source Resistance
Vgs - Gate-Source Voltage
Vgs th - Gate-Source Threshold Voltage
Qg - Gate Charge
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Channel Mode
Configuration
Package / Case
Packaging
Series
Technology
Transistor Type
Brand
Forward Transconductance - Min
Fall Time
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the SCT3080KLGC11 from our SiC MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SCT3080KLGC11 and other electronic components in the SiC MOSFETs category and beyond.

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Additional Infomation About Product

The SCT3080KLGC11 MOSFET is a high-performance switching power device manufactured by ROHM Semiconductor. It is based on an advanced Silicon Carbide (SiC) process, and features a N-Channel 1200 Volt (V) TrenchMOS design for high-speed switching and low on-resistance (Ohm) of 80 mOhm. It is capable of handling a maximum of 31 Amps (A). This device is specially designed to offer extremely low switching losses, allowing higher efficiency power converters. Due to its low on-resistance and greater power capabilities, it is well suited for applications such as solar inverters, electric vehicles, and power supply designs. It also features an optimized gate structure to increase driving speed, reducing EMI noise and further improving efficiency.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

LAPIS Semiconductor may also be referenced as

RHE
RHM
ROHM Semicon
ROHM Semiconductor

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