Doc No. TT4-EA-10000 Revision. 2 Product Standards MOS FET MTM862270LBF MTM862270LBF Silicon N-channel MOSFET Unit : mm 1.6 For Switching 0.2 0.13 6 5 4 Features Low drain-source On-state Resistance : RDS(on) typ = 80 m (VGS = 4.0 V) Low drive voltage:1.8V drive Halogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL : Level 1 compliant) 12 3 0.5 (0.5)(0.5) 1.0 Marking Symbol : JF 1. Drain 4. Source Packaging 2. Drain 5. Drain Embossed type (Thermo-compression sealing) : 10 000 pcs / reel (standard) 3. Gate 6. Drain Panasonic WSSMini6-F1 JEITA Code Absolute Maximum Ratings Ta = 25 C Parameter Symbol Rating Unit Drain to Source Voltage VDS 20 Internal Connection V Gate to Source Voltage VGS 10 Drain Current ID 2.2 A *1 IDp 8.0 Drain Current (Pulsed) *2 PD 540 mW Total Power Dissipation Channel Temperature Tch 150 Topr -40 to +85 Operating Ambient Temperature C Storage Temperature Range Tstg -55 to +150 Note) *1 Pulse widtht 10 s, Duty cycle 1 % *2 Measuring on ceramic substrate at 40 mm 38 mm 0.2 mm PD absolute maximum rating without a heat shink: 150 mW Pin Name 1. Drain 4. Source 2. Drain 5. Drain 3. Gate 6. Drain Page 1of 6 Established : 2007-09-21 Revised : 2013-09-10 1.4 1.6Doc No. TT4-EA-10000 Revision. 2 Product Standards MOS FET MTM862270LBF Electrical Characteristics Ta = 25 C 3 C Parameter Symbol Conditions Min Typ Max Unit Drain-source Breakdown Voltage VDSS ID = 1.0 mA, VGS = 0 20 V Zero Gate Voltage Drain Current IDSS VDS = 20 V, VGS = 0 1.0 A Gate-source Leakage Current IGSS VGS = 8.0 V, VDS = 0 10 A Gate-source Threshold Voltage Vth ID = 1.0 mA, VDS = 10 V 0.4 0.85 1.3 V RDS(on)1 m ID = 1.0 A, VGS = 4.0 V 80 105 *1 RDS(on)2 ID = 0.5 A, VGS = 2.5 V 100 150 m Drain-source On-state Resistance RDS(on)3 ID = 0.5 A, VGS = 1.8 V 170 300 m *1 Yfs ID = 1.0 A, VDS = 10 V 3.0 4.0 S Forward transfer admittance Input Capacitance Ciss 280 pF Output Capacitance Coss VDS = 10 V, VGS = 0, f = 1 MHz 18 pF Reverse Transfer Capacitance Crss 17 pF VDD = 10 V, VGS = 0 to 4 V *2 ton 12 ns Turn-on time ID = 1.0 A VDD = 10 V, VGS = 4 to 0 V *2 toff 50 ns Turn-off time ID = 1.0 A Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 Measuring methods for transistors. *1 Pulse test 2. *2 Measurement circuit for Turn-on Time / Turn-off Time Page 2of 6 Established : 2007-09-21 Revised : 2013-09-10