SFT1342-TL-W ON Semiconductor

Ordering number : ENA1559B SFT1342 Power MOSFET SFT1342 Electrical Characteristics at Ta = 25C Value Parameter Symbol Conditions Unit min typ max Drain to Source Breakdown Voltage V( ) I = 1mA, V=0V 60 V BR DSS D GS Zero-Gate Voltage Drain Current I V = 60V, V=0V 1 A DSS DS GS Gate to Source Leakage Current I V =16V, V=0V 10 A GSS GS DS Gate Threshold Voltage V(th) V = 10V, I = 1mA 1.2 2.6 V GS DS D Forward Transconductance g V = 10V, I = 6A 11 S FS DS D R(on)1 I = 6A, V = 10V 47 62 m DS D GS Static Drain to Source On-State Resistance R(on)2 I = 6A, V = 4.5V 62 87 m DS D GS R(on)3 I = 6A, V = 4V 68 96 m DS D GS Input Capacitance Ciss 1150 pF Output Capacitance Coss V = 20V, f=1MHz 115 pF DS Reverse Transfer Capacitance Crss 95 pF Turn-ON Delay Time t (on) 10 ns d Rise Time t 37 ns r See specified Test Circuit. Turn-OFF Delay Time t (off) 135 ns d Fall Time t 75 ns f Total Gate Charge Qg 26 nC Gate to Source Charge Qgs V = 30V, V = 10V, I = 12A 3.5 nC DS GS D Gate to Drain Miller Charge Qgd 5 nC Forward Diode Voltage V I = 12A, V=0V 0.95 1.2V SD S GS Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. Switching Time Test Circuit V V =--30V DD IN 0V --10V I =--6A D V IN R =5 L D V OUT PW=10s D.C.1% G SFT1342 P.G 50 S No.A1559-2/6