Ordering number : ENA1874A SFT1350 P-Channel Power MOSFET SFT1350 Electrical Characteristics at Ta=25C Ratings Parameter Symbol Conditions Unit min typ max Drain-to-Source Breakdown Voltage V I =--1mA, V =0V --40 V (BR)DSS D GS Zero-Gate Voltage Drain Current I V =--40V, V =0V --1 A DSS DS GS Gate-to-Source Leakage Current I V =16V, V =0V 10 A GSS GS DS Cutoff Voltage V (off) V =--10V, I =--1mA --1.7 --2.6 V GS DS D Forward Transfer Admittance yfs V =--10V, I =--9.5A 8.7 S DS D R (on)1 I =--9.5A, V =--10V 45 59 m DS D GS Static Drain-to-Source On-State Resistance R (on)2 I =--5A, V =--4.5V 73 105 m DS D GS Input Capacitance Ciss 590 pF Output Capacitance Coss V =--20V, f=1MHz 85 pF DS Reverse Transfer Capacitance Crss 61 pF Turn-ON Delay Time t (on) 8ns d Rise Time t 40 ns r See speci ed Test Circuit. Turn-OFF Delay Time t (off) 52 ns d Fall Time t 44 ns f Total Gate Charge Qg 12 nC Gate-to-Source Charge Qgs V =--20V, V =--10V, I =--19A 3.6 nC DS GS D Gate-to-Drain Miller Charge Qgd 2.0 nC Diode Forward Voltage V I =--19A, V =0V --1.03 --1.2 V SD S GS Switching Time Test Circuit V = --20V V IN DD 0V --10V I = --9.5A D V IN R =2.1 L D V OUT PW=10s D.C.1% G SFT1350 P.G 50 S Ordering Information Device Package Shipping memo SFT1350-H TP 500pcs./bag Pb Free and Halogen Free SFT1350-TL-H TP-FA 700pcs./reel No. A1874-2/9