2N7002W, 2V7002W Small Signal MOSFET 60 V, 340 mA, Single, NChannel, SC70 Features ESD Protected Low R DS(on) www.onsemi.com Small Footprint Surface Mount Package 2V Prefix for Automotive and Other Applications Requiring Unique V R MAX I MAX (BR)DSS DS(on) D Site and Control Change Requirements AECQ101 Qualified and (Note 1) PPAP Capable 1.6 10 V These Devices are PbFree, Halogen Free/BFR Free and are RoHS 60 V 340 mA 2.5 4.5 V Compliant Applications Low Side Load Switch SIMPLIFIED SCHEMATIC Level Shift Circuits DCDC Converter Gate 1 Portable Applications i.e. DSC, PDA, Cell Phone, etc. 3 Drain MAXIMUM RATINGS (T = 25C unless otherwise stated) J Rating Symbol Value Unit Source 2 DraintoSource Voltage V 60 V DSS (Top View) GatetoSource Voltage V 20 V GS Drain Current (Note 1) I mA D MARKING DIAGRAM Steady State T = 25C 310 A & PIN ASSIGNMENT T = 85C 220 A Drain t < 5 s T = 25C 340 A 3 T = 85C 240 A Power Dissipation (Note 1) P mW D Steady State 280 71 M SC70/SOT323 t < 5 s 330 CASE 419 Pulsed Drain Current (t = 10 s) I 1.4 A STYLE 8 p DM 1 2 Operating Junction and Storage T , T 55 to C Gate Source J STG Temperature Range +150 71 = Device Code Source Current (Body Diode) I 250 mA S M = Date Code Lead Temperature for Soldering Purposes T 260 C = PbFree Package L (1/8 from case for 10 s) (Note: Microdot may be in either location) GateSource ESD Rating ESD 2000 V (HBM, Method 3015) ORDERING INFORMATION Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be Device Package Shipping assumed, damage may occur and reliability may be affected. 2N7002WT1G SC70 3000/Tape & Reel THERMAL CHARACTERISTICS (PbFree) Characteristic Symbol Max Unit 2V7002WT1G SC70 3000/Tape & Reel JunctiontoAmbient Steady State R 450 C/W JA (PbFree) (Note 1) For information on tape and reel specifications, JunctiontoAmbient t 5 s (Note 1) R 375 including part orientation and tape sizes, please JA refer to our Tape and Reel Packaging Specifications 1. Surfacemounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in Brochure, BRD8011/D. sq 1 oz including traces) Semiconductor Components Industries, LLC, 2015 1 Publication Order Number: April, 2015 Rev. 6 2N7002W/D2N7002W, 2V7002W ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise specified) J Parameter Symbol Test Condition Min Typ Max Units OFF CHARACTERISTICS DraintoSource Breakdown Voltage V V = 0 V, I = 250 A 60 V (BR)DSS GS D DraintoSource Breakdown Voltage V /T 71 mV/C (BR)DSS J Temperature Coefficient Zero Gate Voltage Drain Current I T = 25C 1.0 A DSS J V = 0 V, GS V = 60 V T = 150C 15 A DS J T = 25C 100 nA J V = 0 V, GS V = 50 V DS T = 150C 10 A J GatetoSource Leakage Current I V = 0 V, V = 20 V 10 A GSS DS GS V = 0 V, V = 10 V 450 nA DS GS V = 0 V, V = 5.0 V 150 nA DS GS ON CHARACTERISTICS (Note 2) Gate Threshold Voltage V V = V , I = 250 A 1.0 2.5 V GS(TH) GS DS D Negative Threshold Temperature V /T 4.0 mV/C GS(TH) J Coefficient DraintoSource On Resistance R V = 10 V, I = 500 mA 1.19 1.6 DS(on) GS D V = 4.5 V, I = 200 mA 1.33 2.5 GS D Forward Transconductance g V = 5 V, I = 200 mA 530 mS FS DS D CHARGES AND CAPACITANCES Input Capacitance C 24.5 pF ISS V = 0 V, f = 1 MHz, GS Output Capacitance C 4.2 OSS V = 20 V DS Reverse Transfer Capacitance C 2.2 RSS Total Gate Charge Q 0.7 nC G(TOT) Threshold Gate Charge Q 0.1 G(TH) V = 4.5 V, V = 10 V GS DS I = 200 mA D GatetoSource Charge Q 0.3 GS GatetoDrain Charge Q 0.1 GD SWITCHING CHARACTERISTICS, V = V (Note 3) GS TurnOn Delay Time t 12.2 ns d(ON) Rise Time t 9.0 r V = 10 V, V = 25 V, GS DD I = 500 mA, R = 25 TurnOff Delay Time t D G 55.8 d(OFF) Fall Time t 29 f DRAINSOURCE DIODE CHARACTERISTICS Forward Diode Voltage V T = 25C 0.8 1.2 V SD J V = 0 V, GS I = 200 mA S T = 85C 0.7 J Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Pulse Test: pulse width 300 s, duty cycle 2% 3. Switching characteristics are independent of operating junction temperatures www.onsemi.com 2