SH8K4TB1 ROHM

4V Drive Nch+Nch MOSFET SH8K4 Structure Dimensions (Unit : mm) Silicon N-channel MOSFET SOP8 Features 1) Low on-resistance. 2) Built-in G-S Protection Diode. 3) Small surface Mount Package (SOP8). Application Power switching, DC / DC converter. Each lead has same dimensions Packaging specifications Inner circuit (8) (7) (6) (5) (8) (7) (6) (5) Package Taping Type Code TB Basic ordering unit (pieces) 2500 SH8K4 2 2 (1) (2) (3) (4) (1) Tr1 Source (2) Tr1 Gate Absolute maximum ratings (Ta=25C) 1 1 (3) Tr2 Source <It is the same ratings for the Tr1 and Tr2.> (4) Tr2 Gate (5) Tr2 Drain (1) (2) (3) (4) Parameter Symbol Limits Unit (6) Tr2 Drain (7) Tr1 Drain Drain-source voltage V 30 V 1 ESD PROTECTION DIODE DSS (8) Tr1 Drain 2 BODY DIODE Gate-source voltage VGSS 20 V A protection diode is included between the gate and Continuous ID 9.0 A the source terminals to protect the diode against static Drain current 1 electricity when the product is in use. Use the protection Pulsed IDP 36 A circuit when the fixed voltages are exceeded. Source current Continuous I 1.6 A S 1 (Body diode) Pulsed ISP 6.4 A 2 Total power dissipation PD 2 W Channel temperature Tch 150 C Storage temperature Tstg 55 to +150 C 1 Pw 10s, Duty cycle 1% 2 MOUNTED ON A CERAMIC BOARD. Thermal resistance Parameter Symbol Limits Unit Channel to ambient Rth (ch-a) 62.5 C / W MOUNTED ON A CERAMIC BOARD. www.rohm.com 2009.12 - Rev.A 1/3 c 2009 ROHM Co., Ltd. All rights reserved. SH8K4 Data Sheet Electrical characteristics (Ta=25C) <It is the same characteristics for the Tr1 and Tr2.> Parameter Symbol Min. Typ. Max. Unit Conditions Gate-source leakage IGSS 10 AVGS=20V, VDS=0V Drain-source breakdown voltage V 30 VI =1mA, V =0V (BR) DSS D GS Zero gate voltage drain current IDSS 1 AVDS=30V, VGS=0V Gate threshold voltage VGS (th) 1.0 2.5 V VDS=10V, ID=1mA 12 17 I =9.0A, V =10V D GS Static drain-source on-state RDS (on) 16 23 m ID=9.0A, VGS=4.5V resistance 17 24 ID=9.0A, VGS=4V Forward transfer admittance Y 7.0 SI =9.0A, V =10V fs D DS Input capacitance Ciss 1190 pF VDS=10V Output capacitance Coss 340 pF VGS=0V Reverse transfer capacitance C 190 pF f=1MHz rss Turn-on delay time td (on) 10 ns ID=4.5A, VDD 15V Rise time tr 15 ns VGS=10V Turn-off delay time t 55 ns R =3.33 d (off) L Fall time tf 22 ns RG =10 Total gate charge Qg 15 21 nC VDD 15V Gate-source charge Q 3.0 nC V =5V gs GS Gate-drain charge Qgd6.1 nC ID=9.0A Pulsed Body diode characteristics (Source-Drain) (Ta=25C) <It is the same characteristics for the Tr1 and Tr2.> Parameter Symbol Min. Typ. Max. Unit Conditions Forward voltage VSD 1.2 V IS=6.4A, VGS=0V Pulsed www.rohm.com 2009.12 - Rev.A 2/3 c 2009 ROHM Co., Ltd. All rights reserved.