X-On Electronics has gained recognition as a prominent supplier of SH8K51GZETB MOSFET across the USA, India, Europe, Australia, and various other global locations. SH8K51GZETB MOSFET are a product manufactured by ROHM. We provide cost-effective solutions for MOSFET, ensuring timely deliveries around the world.

SH8K51GZETB ROHM

SH8K51GZETB electronic component of ROHM
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See Product Specifications
Part No.SH8K51GZETB
Manufacturer: ROHM
Category: MOSFET
Description: MOSFET 4V Drive Nch+Nch MOSFET. SH8K51 is a power MOSFET with low-on resistance and High power package (SOP8), suitable for switching.
Datasheet: SH8K51GZETB Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 1.0121 ea
Line Total: USD 1.01

Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Mon. 05 Aug to Wed. 07 Aug
MOQ : 2500
Multiples : 2500
2500 : USD 0.4451
5000 : USD 0.4451
10000 : USD 0.4267

   
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We are delighted to provide the SH8K51GZETB from our MOSFET category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SH8K51GZETB and other electronic components in the MOSFET category and beyond.

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SH8K51 Datasheet 35V Nch+Nch Power MOSFET llOutline V 35V DSS R (Max.) 58m DS(on) SOP8 I 4.0A D P 2.0W D llFeatures llInner circuit 1) Low on - resistance 2) Small Surface Mount Package (SOP8) 3) Pb-free lead plating RoHS compliant 4) Halogen Free llPackaging specifications Embossed Packing Tape llApplication Reel size (mm) 330 Switching Tape width (mm) 12 Type Basic ordering unit (pcs) 2500 Taping code TB Marking SH8K51 llAbsolute maximum ratings (T = 25C ,unless otherwise specified) <Tr1 and Tr2> a Parameter Symbol Value Unit V Drain - Source voltage 35 V DSS Continuous drain current I 4.0 A D *1 I Pulsed drain current 16 A DP Gate - Source voltage V 20 V GSS *2 P 2.0 D Power dissipation (total) W *3 P 1.4 D Junction temperature T 150 j T Operating junction and storage temperature range -55 to +150 stg www.rohm.com 1/11 20170825 - Rev.002 2017 ROHM Co., Ltd. All rights reserved. SH8K51 Datasheet llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. *2 R - - 62.5 thJA Thermal resistance, junction - ambient (total) /W *3 R - - 89.2 thJA llElectrical characteristics (T = 25C) <Tr1 and Tr2> a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = 1mA 35 - - V (BR)DSS GS D voltage V (BR)DSS I = 1mA D Breakdown voltage - 37.3 - mV/ temperature coefficient T referenced to 25 j Zero gate voltage I V = 35V, V = 0V - - 1 A DSS DS GS drain current Gate - Source I V = 0V, V = 20V - - 10 A GSS DS GS leakage current Gate threshold V V = 10V, I = 1mA 1.2 - 2.8 V GS(th) DS D voltage V I = 1mA GS(th) D Gate threshold voltage - -3.8 - mV/ temperature coefficient T j referenced to 25 V = 10V, I = 4.0A - 42 58 GS D Static drain - source *4 R V = 4.5V, I = 4.0A - 60 84 m DS(on) GS D on - state resistance V = 4.0V, I = 4.0A - 70 98 GS D R Gate resistance f = 1MHz, open drain - 6.3 - G Forward Transfer *4 Y V = 10V, I = 4.0A 2.5 - - S fs DS D Admittance *1 Pw 10s, Duty cycle 1% *2 Mounted on a ceramic board (30300.8mm) *3 Mounted on a FR4 (25250.8mm) *4 Pulsed www.rohm.com 2017 ROHM Co., Ltd. All rights reserved. 2/11 20170825 - Rev.002

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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