DMP2042UCB4 P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary (Typ V = -4.5V, T = +25C) Features and Benefits GS A Low Q & Q g gd BV R I DSS DS(ON) D Small Footprint Low Profile 0.62mm Height 37m V = -4.5V -4.6A GS ESD Protected Up To 3KV -20V Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 49m V = -2.5V -3.7A GS Halogen and Antimony Free. Green Device (Note 3) Mechanical Data Description and Applications Case: U-WLB1010-4 (Type C) Moisture Sensitivity: Level 1 per J-STD-020 This new generation MOSFET is designed to minimize the on-state Terminal: Finish - SnAgCu. Solderable per MIL-STD-202 Method resistance (R ), yet maintain superior switching performance, DS(ON) 208 making it ideal for high efficiency power management applications. Terminal Connections: See Diagram Below Battery Management Load Switch Battery Protection U-WLB1010-4 (Type C) ESD PROTECTED TO 3kV Top View Equivalent Circuit Ordering Information (Note 4) Part Number Case Packaging DMP2042UCB4-7 U-WLB1010-4 (Type C) 3000/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 2. See DMP2042UCB4 Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain-Source Voltage V -20 V DSS Gate-Source Voltage V -6 V GSS Continuous Drain Current (Note 5) V = -4.5V I -4.6 A GS D Continuous Drain Current (Note 5) V = -2.5V I -3.7 A GS D Pulsed Drain Current (Note 6) I -16 A DM Thermal Characteristics Characteristic Symbol Value Unit Power Dissipation (Note 7) P 0.75 W D 165 C/W Thermal Resistance, Junction to Ambient TA = +25C (Note 7) RJA Power Dissipation (Note 5) 1.4 W P D 87 C/W Thermal Resistance, Junction to Ambient T = +25C (Note 5) R A JA Operating and Storage Temperature Range -55 to +150 C T , T J STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage -20 V BV V = 0V, I = -250A DSS GS D -1 A Zero Gate Voltage Drain Current T = +25C I V = -16V, V = 0V J DSS DS GS Gate-Source Leakage -100 nA I V = -6V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 8) Gate Threshold Voltage -0.4 -0.8 -1.2 V V V = V , I = -250A GS(TH) DS GS D 37 45 V = -4.5V, I =-1A GS D Static Drain-Source On-Resistance m RDS(ON) 49 65 V = -2.5V, I = -1A GS D Forward Transfer Admittance Y 6.6 - S V = -10V, I = -1A FS DS D Diode Forward Voltage V -0.7 -1.0 V V = 0V, I = -1A SD GS S DYNAMIC CHARACTERISTICS (Note 9) 218 Input Capacitance C iss V = -10V, V = 0V, DS GS 148 Output Capacitance C pF oss f = 1.0MHz 11 Reverse Transfer Capacitance C rss Series Gate Resistance 20 R g f = 1MHz, V = 0V, V = 0V GS DS Series Clamp Resistance 5,000 R C Total Gate Charge 2.5 Q g Gate-Source Charge 0.4 Q V = -4.5V, V = -10V, gs GS DS nC 0.4 Gate-Drain Charge Q I =-1A gd D 0.2 Gate Charge at V Q TH g(TH) 0.6 Turn-On Delay Time t D(ON) 0.8 Turn-On Rise Time t R V = -10V, V = -2.5V, DS GS s 1.4 Turn-Off Delay Time t R = 10, I = -1A D(OFF) G D Turn-Off Fall Time 0.8 t F Reverse Recovery Charge 2.2 nC Q RR V = -10V, I = -1.0A, DD F Reverse Recovery Time 10 ns di/dt =100A/s t RR 2 2 Notes: 5. Device mounted on FR-4 material with 1-inch (6.45-cm ), 2-oz. (0.071-mm thick) Cu. 6. Repetitive rating, pulse width limited by junction temperature. 7. Device mounted on FR-4 PCB with minimum recommended pad layout, single sided. 8. Short duration pulse test used to minimize self-heating effect. 9. Guaranteed by design. Not subject to production testing. 2 of 7 DMP2042UCB4 June 2018 Diodes Incorporated www.diodes.com Document number: DS38665 Rev. 3 - 2