DMP2541UCB9 P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low Q & Q g gd Small Footprint 1.5mm 1.5mm I D BV R DSS DS(ON) Max Gate ESD Protection <HBM Class 3A> T = +25C A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) -25V 40m V = -4.5V -5.4A GS Halogen and Antimony Free. Green Device (Note 3) Description and Applications Mechanical Data This new generation MOSFET is designed to minimize the on-state Case: U-WLB1515-9 (Type E) resistance (R ) and yet maintain superior switching performance, DS(ON) Moisture Sensitivity: Level 1 per J-STD-020 making it ideal for high efficiency power management applications. Terminal: Finish - SnAgCu. Solderable per MIL-STD-202 Method 208 Battery Management Terminal Connections: See Diagram Below Load Switch Weight: 0.0018 grams (Approximate) Battery Protection Drain G D S D D S Gate Gate D S S Protection Source Diode Top View Equivalent Circuit Pin Configuration Ordering Information (Note 4) Part Number Case Packaging DMP2541UCB9-7 U-WLB1515-9 (Type E) 3000/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 2. See DMP2541UCB9 Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain-Source Voltage V -25 V DSS Gate-Source Voltage V -6 V GSS T = +25C Steady A -3.9 Continuous Drain Current (Note 5) V = -4.5V I A GS D State -3.1 T = +70C A T = +25C Steady A -5.4 A Continuous Drain Current (Note 6) V = -4.5V I GS D State -4.3 T = +70C A Pulsed Drain Current (Pulse Duration 10s, Duty Cycle 1%) I -35 A DM Continuous Source Pin Current (Note 6) I -1.9 A S Pulsed Source Pin Current (Pulse Duration 10s, Duty Cycle 1%) I -35 A SM Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Total Power Dissipation (Note 5) P 0.94 W D Total Power Dissipation (Note 6) P 1.78 W D Thermal Resistance, Junction to Ambient (Note 5) 135 C/W R JA Thermal Resistance, Junction to Ambient (Note 6) 71 C/W R JA Operating and Storage Temperature Range -55 to +150 C T T J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage -25 V BVDSS VGS = 0V, ID = -250A -1 A Zero Gate Voltage Drain Current T = +25C I V = -20V, V = 0V C DSS DS GS Gate-Source Leakage -100 nA I V = -6V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 7) Gate Threshold Voltage -0.4 -0.78 -1.1 V V V = V , I = -250A GS(TH) DS GS D 28 40 V = -4.5V, I = -2A GS D Static Drain-Source On-Resistance 36 50 m R V = -2.5V, I = -2A DS(ON) GS D 51 60 V = -1.8V, I = -2A GS D Diode Forward Voltage (Note 5) V -0.74 -1 V V = 0V, I = -2A SD GS S 6.8 Reverse Recovery Charge Q nC RR V = -9.5V, I = -2A, di/dt = DD F 13.6 Reverse Recovery Time t ns 200A/s RR DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance C 566 850 pF iss V = -10V, V = 0V, DS GS Output Capacitance 343 515 pF Coss f = 1.0MHz Reverse Transfer Capacitance 20 30 pF C rss Series Gate Resistance 12.1 18 R V = 0V, V = 0V, f = 1.0MHz g DS GS Total Gate Charge 4.7 7 nC Q g V = -4.5V, V = -10V, GS DS Gate-Source Charge 0.6 nC Q gs I = -2A D Gate-Drain Charge 1.0 nC Q gd Turn-On Delay Time t 3.4 6.8 ns D(ON) Turn-On Rise Time t 6.5 ns R V = -10V, V = -4.5V, DD GS Turn-Off Delay Time t 55 110 ns I = -2A, R = 2 D(OFF) DS g Turn-Off Fall Time t 43 ns F Notes: 5. Device mounted on FR-4 PCB with minimum recommended pad layout. 2 2 6. Device mounted on FR-4 material with 1inch (6.45cm ), 2oz. (0.071mm thick) Cu. 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to production testing. 2 of 7 DMP2541UCB9 March 2018 Diodes Incorporated www.diodes.com Document number: DS40683 Rev. 2 - 2