X-On Electronics has gained recognition as a prominent supplier of DMN6017SK3-13 MOSFETs across the USA, India, Europe, Australia, and various other global locations. DMN6017SK3-13 MOSFETs are a product manufactured by Diodes Incorporated. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

DMN6017SK3-13 Diodes Incorporated

DMN6017SK3-13 electronic component of Diodes Incorporated
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Part No.DMN6017SK3-13
Manufacturer: Diodes Incorporated
Category: MOSFETs
Description: MOSFET MOSFETBVDSS: 41V-60V
Datasheet: DMN6017SK3-13 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 1.034 ea
Line Total: USD 1.03 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
19
Ship by Mon. 06 Jan to Thu. 09 Jan
MOQ : 1
Multiples : 1
1 : USD 0.3667
10 : USD 0.3572
30 : USD 0.3514
100 : USD 0.3457

   
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We are delighted to provide the DMN6017SK3-13 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the DMN6017SK3-13 and other electronic components in the MOSFETs category and beyond.

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DMN6017SK3 Green 60V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Low On-Resistance I Max D BV R Max DSS DS(ON) Low Input Capacitance T = +25C C Lead-Free Finish RoHS Compliant (Notes 1 & 2) 18m V = 10V 43A GS 60V Halogen and Antimony Free. Green Device (Note 3) 20m V = 4.5V 41A GS Qualified to AEC-Q101 Standards for High Reliability Mechanical Data Description and Applications This new generation MOSFET is designed to minimize the on-state Case: TO252 (DPAK) resistance (R ) and yet maintain superior switching performance, Case Material: Molded Plastic, Green Molding Compound. DS(ON) making it ideal for high-efficiency power management applications. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Power Management Functions Terminal Connections: See Diagram DC-DC Converters Weight: 0.33 grams (Approximate) Industrial Equivalent Circuit Top View Pin Out Top View Ordering Information (Note 4) Part Number Case Packaging DMN6017SK3-13 TO252 (DPAK) 2,500/Tape & Reel Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied. 2. See DMN6017SK3 Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain-Source Voltage V 60 V DSS Gate-Source Voltage V 20 V GSS T = +25C 43 C I A D 34 T = +70C C Continuous Drain Current, V = 10V (Note 5) GS T = +25C 11 A A I D 8.8 T = +70C A Pulsed Drain Current (380s Pulse, Duty Cycle = 1%) I 70 A DM Maximum Continuous Body Diode Forward Current (Note 5) I 3.6 A S Avalanche Current, L = 0.1mH I 25 A AS Avalanche Energy, L = 0.1mH E 32 mJ AS Thermal Characteristics Characteristic Symbol Value Unit 3.3 T = +25C A Total Power Dissipation (Note 5) P W D 50 T = +25C C Thermal Resistance, Junction to Ambient (Note 5) R 38 JA C/W Thermal Resistance, Junction to Case (Note 5) 2.5 R JC Operating and Storage Temperature Range T T -55 to +150 C J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 6) Drain-Source Breakdown Voltage BV 60 - - V V = 0V, I = 250A DSS GS D Zero Gate Voltage Drain Current - - 1 A I V = 48V, V = 0V DSS DS GS Gate-Source Leakage - - 100 nA I V = 20V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 6) Gate Threshold Voltage 1 - 3 V V V = V , I = 250A GS(TH) DS GS D - - 18 V = 10V, I = 6A GS D Static Drain-Source On-Resistance R m DS(ON) - - 20 V = 4.5V, I = 4A GS D Diode Forward Voltage V - - 1 V V = 0V, I = 1A SD GS S DYNAMIC CHARACTERISTICS (Note 7) Input Capacitance C - 2711 - pF iss V = 15V, V = 0V, DS GS 152 Output Capacitance C - - pF oss f = 1MHz 126 Reverse Transfer Capacitance C - - pF rss 1.4 Gate Resistance R - - V = 0V, V = 0V, f = 1MHz g DS GS 26 - - nC Total Gate Charge (V = 4.5V) Q GS g - 55 - nC Total Gate Charge (V = 10V) Q GS g V = 48V, I = 6A DS D Gate-Source Charge - 6.2 - nC Q gs Gate-Drain Charge - 8.5 - nC Q gd Turn-On Delay Time - 4.9 - ns t D(ON) 5.4 Turn-On Rise Time t - - ns V = 30V, V = 10V, R DD GS 38.2 Turn-Off Delay Time t - - ns R = 3.3, , I = 6A D(OFF) g D 11 Turn-Off Fall Time t - - ns F 16.6 Reverse Recovery Time t - - ns RR I = 6A, di/dt = 100A/s F 10.3 Reverse Recovery Charge Q - - nC RR Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 6. Short duration pulse test used to minimize self-heating effect. 7. Guaranteed by design. Not subject to product testing. 2 of 7 DMN6017SK3 June 2017 Diodes Incorporated www.diodes.com Document number: DS37725 Rev. 2 - 2 ADVANCED INFORMATION

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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