DMTH6010LPS
Green
60V 175C N-CHANNEL ENHANCEMENT MODE MOSFET
PowerDI5060-8
Product Summary Features
Rated to +175C Ideal for High Ambient Temperature
I
D
BV R T = +25C Environments
DSS DS(ON) C
(Note 8)
High Conversion Efficiency
100A
8m @ V = 10V
GS Low R Minimizes On State Losses
DS(ON)
60V
85A
12m @ V = 4.5V
GS Low Input Capacitance
Fast Switching Speed
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Description
Halogen and Antimony Free. Green Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
This new generation N-Channel Enhancement Mode MOSFET is
An Automotive-Compliant Part is Available Under Separate
designed to minimize R , yet maintain superior switching
DS(ON)
Datasheet (DMTH6010LPSQ)
performance.
Mechanical Data
Applications
Case: PowerDI 5060-8
Notebook Battery Power Management
Case Material: Molded Plastic, Green Molding Compound.
DC-DC Converters UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Load Switch
Terminal Finish - Matte Tin Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208
Weight: 0.097 grams (Approximate)
PowerDI5060-8
S
D
Pin1
S
D
D
S
G D
Top View
Top View
Bottom View Internal Schematic
Pin Configuration
Ordering Information (Note 4)
Part Number Case Packaging
DMTH6010LPS-13 PowerDI5060-8 2,500 / Tape & Reel
Notes: 1. EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. All applicable RoHS exemptions applied.
2. See
DMTH6010LPS
Maximum Ratings (@T = +25C, unless otherwise specified.)
A
Characteristic Symbol Value Unit
Drain-Source Voltage V 60 V
DSS
Gate-Source Voltage V 20 V
GSS
T = +25C 13.5
A
Continuous Drain Current (Note 5) I A
D
10.4
T = +70C
A
T = +25C
C
100
Continuous Drain Current (Note 6) (Note 8) A
I
D
T = +100C 75
C
Maximum Continuous Body Diode Forward Current (Note 6) I 100 A
S
Pulsed Drain Current (10s Pulse, Duty Cycle = 1%) I 140 A
DM
Avalanche Current, L=0.1mH I 20 A
AS
Avalanche Energy, L=0.1mH E 20 mJ
AS
Thermal Characteristics
Characteristic Symbol Value Unit
Total Power Dissipation (Note 5) T = +25C P 2.6 W
A D
Thermal Resistance, Junction to Ambient (Note 5) R 57 C/W
JA
Total Power Dissipation (Note 6) T = +25C P 136 W
C D
Thermal Resistance, Junction to Case (Note 6) R 1.1 C/W
JC
Operating and Storage Temperature Range T T -55 to +175 C
J, STG
Electrical Characteristics (@T = +25C, unless otherwise specified.)
A
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage BV 60 V V = 0V, I = 1mA
DSS GS D
Zero Gate Voltage Drain Current I 1 A V = 48V, V = 0V
DSS DS GS
Gate-Source Leakage I 100 nA V = 20V, V = 0V
GSS GS DS
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage V 1 3 V V = V , I = 250A
GS(TH) DS GS D
5.4 8 V = 10V, I = 20A
GS D
Static Drain-Source On-Resistance m
R
DS(ON)
8.3 12 V = 4.5V, I = 20A
GS D
Diode Forward Voltage 0.8 1.2 V
V V = 0V, I = 20A
SD GS S
DYNAMIC CHARACTERISTICS (Note 8)
2,090
Input Capacitance
C
iss
V = 30V, V = 0V,
DS GS
Output Capacitance 746 pF
C
oss
f = 1MHz
Reverse Transfer Capacitance 38.5
C
rss
Gate Resistance 0.2 0.59 1.5
R V = 0V, V = 0V, f = 1MHz
g DS GS
19.3
Total Gate Charge (V = 4.5V) Q
GS g
41.3
Total Gate Charge (V = 10V) Q
GS g
nC
V = 30V, I = 20A
DS D
6
Gate-Source Charge Q
gs
8.8
Gate-Drain Charge Q
gd
5.7
Turn-On Delay Time t
D(ON)
4.3
Turn-On Rise Time
t V = 30V, V = 10V,
R DD GS
ns
Turn-Off Delay Time 23.4 I = 20A, R = 3
t D G
D(OFF)
Turn-Off Fall Time 9.7
t
F
Body Diode Reverse Recovery Time 35.4 ns
t
RR
I = 20A, di/dt = 100A/s
F
Body Diode Reverse Recovery Charge 38.2 nC
Q
RR
Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate.
6. Thermal resistance from junction to soldering point (on the exposed drain pad).
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.
2 of 7
DMTH6010LPS February 2018
Diodes Incorporated
www.diodes.com
Document number: DS37354 Rev. 6 - 2
ADVANCED INFORMATION