DMN3401LDW DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Dual N-Channel MOSFET I max D Device BV R max DSS DS(ON) Low On-Resistance T = +25C A Low Input Capacitance 0.4 V = 10V 0.8A GS N- Fast Switching Speed 30V ESD Protected Gate Channel 0.7 V = 4.5V GS 0.57A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) For automotive applications requiring specific change control (i.e. parts qualified to AEC-Q100/101/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please contact us or your local Diodes representative. DMN3401LDW Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain-Source Voltage V 30 V DSS Gate-Source Voltage 20 V V GSS Steady T = +25C 0.8 A A Continuous Drain Current (Note 6) V = 10V I GS D State 0.6 T = +70C A Maximum Continuous Body Diode Forward Current (Note 6) I 0.4 A S Pulsed Drain Current (10s Pulse, Duty Cycle = 1%) I 4 A DM Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Total Power Dissipation (Note 5) P 0.29 W D Steady State Thermal Resistance, Junction to Ambient (Note 5) R 433 C/W JA Total Power Dissipation (Note 6) 0.35 W PD Steady State Thermal Resistance, Junction to Ambient (Note 6) 360 C/W R JA Operating and Storage Temperature Range -55 to +150 C T T J, STG Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage 30 V BV V = 0V, I = 250A DSS GS D Zero Gate Voltage Drain Current 1.0 A I V = 30V, V = 0V DSS DS GS Gate-Source Leakage 10 A I V = 20V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 7) Gate Threshold Voltage 0.8 1.2 1.6 V V V = V , I = 250A GS(TH) DS GS D 0.2 0.4 V = 10V, I = 0.59A GS D Static Drain-Source On-Resistance R DS(ON) 0.3 0.7 V = 4.5V, I = 0.2A GS D Diode Forward Voltage V 0.7 1.2 V V = 0V, I = 10mA SD GS S DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance C 50 pF iss V = 15V, V = 0V, DS GS Output Capacitance C 12 pF oss f = 1.0MHz Reverse Transfer Capacitance C 10 pF rss Gate Resistance 58 R V = V = 0V, f = 1.0MHz g DS GS 0.5 nC Total Gate Charge (V = 4.5V) Q GS g 1.2 nC Total Gate Charge (V = 10V) Q V = 10V, V = 10V GS g DS GS Gate-Source Charge 0.2 nC = 250mA Q ID gs Gate-Drain Charge 0.1 nC Q gd Turn-On Delay Time t 3.5 ns D(ON) Turn-On Rise Time t 3.3 ns R V = 10V, V = 30V, GS DS Turn-Off Delay Time t 16.8 ns I = 100mA, R = 25 D(OFF) D G Turn-Off Fall Time t 13.8 ns F Notes: 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to product testing. 2 of 7 April 2021 DMN3401LDW Diodes Incorporated www.diodes.com Document number: DS41496 Rev. 5 - 2