Si1411DH www.vishay.com Vishay Siliconix P-Channel 150 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET power MOSFETS V (V) R ()I (A) Q (TYP.) DS DS(on) D g Small, thermally enhanced SC-70 package 2.6 at V = -10 V -0.52 GS -150 4.2 nC Ultra low on-resistance 2.7 at V = -6 V -0.51 GS Material categorization: for definitions of compliance please see SOT-363 www.vishay.com/doc 99912 SC-70 Single (6 leads) S APPLICATIONS 4 D Active clamp circuits in DC/DC power supplies 5 D 6 S 3 G 2 G D 1 D Top View Marking Code: BG D Ordering Information: Si1411DH-T1-GE3 (lead (Pb)-free and halogen-free) P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) A PARAMETER SYMBOL 5 sSTEADY STATE UNIT Drain-Source Voltage V -150 DS V Gate-Source Voltage V 20 GS T = 25 C -0.52 -0.42 A a Continuous Drain Current (T = 150 C) I J D T = 85 C -0.38 -0.3 A Pulsed Drain Current I -0.8 A DM a Continuous Diode Current (Diode Conduction) I -1.3 -0.83 S Single Pulse Avalanche Current I -2.1 AS L = 0.1 mH Single Pulse Avalanche Energy E 0.22 mJ AS T = 25 C 1.56 1 A a Maximum Power Dissipation P W D T = 85 C 0.81 0.52 A Operating Junction and Storage Temperature Range T , T -55 to +150 C J stg THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYPICALMAXIMUMUNIT t 5 s 60 80 a Maximum Junction-to-Ambient R thJA Steady State 100 125 C/W Maximum Junction-to-Foot (Drain) Steady State R 34 45 thJF Note a. Surface mounted on 1 x 1 FR4 board. S16-0887-Rev. D, 09-May-16 Document Number: 73242 1 For technical questions, contact: pmostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000Si1411DH www.vishay.com Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOL TEST CONDITIONS MIN.TYP.MAX.UNIT Static Gate Threshold Voltage V V = V , I = -100 A -2.5 - -4.5 V GS(th) DS GS D Gate-Body Leakage I V = 0 V, V = 20 V - - 100 nA GSS DS GS V = -150 V, V = 0 V - - -1 DS GS Zero Gate Voltage Drain Current I A DSS V = -150 V, V = 0 V, T = 85 C - - -5 DS GS J a On-State Drain Current I V = -15 V, V = -10 V -0.8 - - A D(on) DS GS V = -10 V, I = -0.5 A - 2.05 2.6 GS D a Drain-Source On-State Resistance R DS(on) V = -6 V, I = -0.5 A - 2.14 2.7 GS D a Forward Transconductance g V = -10 V, I = -0.5 A - 1.5 - S fs DS D a Diode Forward Voltage V I = -1.4 A, V = 0 V - -0.8 -1.1 V SD S GS b Dynamic Total Gate Charge Q -4.2 6.3 g Gate-Source Charge Q V = -75 V, V = -10 V, I = -0.5 A -0.9 - nC gs DS GS D Gate-Drain Charge Q -1.3- gd Gate Resistance R f = 1 MHz - 8.5 - g Turn-On Delay Time t -4.5 7 d(on) Rise Time t -11 17 r V = -75 V, R = 75 DD L I -1 A, V = -4.5 V, R = 6 D GEN g Turn-Off Delay Time t -914 ns d(off) Fall Time t -11 17 f Reverse Recovery Time t -36 55 rr I = -0.5 A, dI/dt = 100 A/s F Body Diode Reverse Recovery Charge Q - 65 100 nC rr Notes a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S16-0887-Rev. D, 09-May-16 Document Number: 73242 2 For technical questions, contact: pmostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000