Si1417EDH Vishay Siliconix P-Channel 12 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 V (V) R ( )I (A) DS DS(on) D Definition 0.085 at V = - 4.5 V - 3.3 TrenchFET Power MOSFET: 1.8 V Rated GS ESD Protected: 3000 V - 12 0.115 at V = - 2.5 V - 2.9 GS Thermally Enhanced SC-70 Package 0.160 at V = - 1.8 V - 2.4 GS Compliant to RoHS Directive 2002/95/EC APPLICATIONS Load Switching PA Switch Level Switch SOT-363 D SC-70 (6-LEADS) D 1 6 D 3 k Marking Code G 5 D 2 D BB XX Lot Traceability and Date Code G 3 4 S Part Code Top View S Ordering Information: Si1417EDH-T1-E3 (Lead (Pb)-free) Si1417EDH-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted A Parameter Symbol 5 s Steady State Unit Drain-Source Voltage V - 12 DS V Gate-Source Voltage V 12 GS T = 25 C - 3.3 - 2.7 A a Continuous Drain Current (T = 150 C) I J D T = 85 C - 2.4 - 1.9 A A Pulsed Drain Current I - 8 DM a Continuous Diode Current (Diode Conduction) I - 1.4 - 0.9 S T = 25 C 1.56 1.0 A a Maximum Power Dissipation P W D T = 85 C 0.81 0.52 A Operating Junction and Storage Temperature Range T , T - 55 to 150 C J stg THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit t 5 s 60 80 a Maximum Junction-to-Ambient R thJA Steady State 100 125 C/W Maximum Junction-to-Foot (Drain) Steady State R 34 45 thJF Notes: a. Surface mounted on 1 x 1 FR4 board. Document Number: 71412 www.vishay.com S10-0935-Rev. B, 19-Apr-10 1 YYSi1417EDH Vishay Siliconix SPECIFICATIONS T = 25 C, unless otherwise noted J Parameter Symbol Test Conditions Min.Typ.Max.Unit Static Gate Threshold Voltage V V = V , I = - 250 A - 0.45 V GS(th) DS GS D V = 0 V, V = 4.5 V 1.5 A DS GS Gate-Body Leakage I GSS V = 0 V, V = 12 V 10 mA DS GS V = - 9.6 V, V = 0 V - 1 DS GS Zero Gate Voltage Drain Current I A DSS V = - 9.6 V, V = 0 V, T = 85 C - 5 DS GS J a I V = - 5 V, V = - 4.5 V - 4 A On-State Drain Current D(on) DS GS V = - 4.5 V, I = - 3.3 A 0.070 0.085 GS D a Drain-Source On-State Resistance R V = - 2.5 V, I = - 2.9 A 0.095 0.115 DS(on) GS D V = - 1.8 V, I = - 1.0 A 0.133 0.160 GS D a Forward Transconductance g V = - 10 V, I = - 3.3 A 8 S fs DS D a Diode Forward Voltage V I = - 1.4 A, V = 0 V - 0.80 - 1.1 V SD S GS b Dynamic Total Gate Charge Q 5.8 8 g Gate-Source Charge Q V = - 6 V, V = - 4.5 V, I = - 3.3 A 1.3 nC gs DS GS D Gate-Drain Charge Q 1.5 gd Turn-On Delay Time t 0.60 1.0 d(on) Rise Time t 1.4 2.1 r V = - 6 V, R = 6 DD L s I - 1 A, V = - 4.5 V, R = 6 Turn-Off Delay Time t 4.9D GEN g 7.5 d(off) Fall Time t 4.9 7.5 f Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 10 000 8 1000 6 100 10 4 T = 150 C J 1 2 T = 25 C J 0.1 0 0.01 0 369 12 15 18 0 36 9 12 V - Gate-to-Source Voltage (V) V - Gate-to-Source Voltage (V) GS GS Gate-Current vs. Gate-Source Voltage Gate-Current vs. Gate-Source Voltage www.vishay.com Document Number: 71412 2 S10-0935-Rev. B, 19-Apr-10 I - Gate Current (mA) GSS I - Gate Current (A) GSS