New Product Si1427EDH Vishay Siliconix P-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 a V (V) R () Q (Typ.) I (A) DS DS(on) g D Definition e 0.064 at V = - 4.5 V - 2.0 GS TrenchFET Power MOSFET e 0.085 at V = - 2.5 V - 2.0 GS 100 % R Tested g - 20 7.6 nC e 0.110 at V = - 1.8 V - 2.0 Typical ESD Performance 2000 V GS Built in ESD Protection with Zener Diode 0.165 at V = - 1.5 V - 0.5 GS Compliant to RoHS Directive 2002/95/EC APPLICATIONS Load Switch for Portable Devices - Cellular Phone - DSC SOT-363 S SC-70 (6-LEADS) - Portable Game Console - MP3 D 1 6 D - GPS Marking Code 5 D 2 D BR XX G Lot Traceability R and Date Code G 3 4 S Part Code Top View D P-Channel MOSFET Ordering Information: Si1427EDH-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) A Parameter Symbol LimitUnit Drain-Source Voltage V - 20 DS V Gate-Source Voltage V 8 GS a, e T = 25 C - 2.0 C e T = 70 C - 2.0 C Continuous Drain Current (T = 150 C) I J D b, c, e T = 25 C - 2.0 A b, c, e T = 70 C A - 2.0 A Pulsed Drain Current I - 8 DM a, e T = 25 C - 2.0 C Continuous Source-Drain Diode Current I S b, c T = 25 C - 1.3 A T = 25 C 2.8 C T = 70 C 1.8 C Maximum Power Dissipation P W D b, c T = 25 C 1.56 A b, c T = 70 C 1 A Operating Junction and Storage Temperature Range T , T - 55 to 150 J stg C d, e Soldering Recommendations (Peak Temperature) 260 THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit b, d t 5 s R 60 80 Maximum Junction-to-Ambient thJA C/W Maximum Junction-to-Foot (Drain) Steady State R 34 45 thJF Notes: a. T = 25 C. C b. Surface mounted on 1 x 1 FR4 board. c. t = 5 s. d. Maximum under steady state conditions is 125 C/W. e. Package limited. Document Number: 65526 www.vishay.com S11-0453-Rev. B, 14-Mar-11 1 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 YYNew Product Si1427EDH Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) J Parameter Symbol Test Conditions Min.Typ.Max.Unit Static Drain-Source Breakdown Voltage V V = 0 V, I = - 250 A - 20 V DS GS D V Temperature Coefficient V /T - 13 DS DS J I = - 250 A mV/C D V Temperature Coefficient V /T 2.5 GS(th) GS(th) J V V = V , I = - 250 A Gate-Source Threshold Voltage - 0.4 - 1 V GS(th) DS GS D V = 0 V, V = 8 V 6 DS GS I Gate-Source Leakage GSS V = 0 V, V = 4.5 V 0.5 DS GS A V = - 20 V, V = 0 V - 1 DS GS Zero Gate Voltage Drain Current I DSS V = - 20 V, V = 0 V, T = 55 C - 10 DS GS J a I V - 5 V, V = - 4.5 V - 8 A On-State Drain Current D(on) DS GS V = - 4.5 V, I = - 3.0 A 0.050 0.064 GS D V = - 2.5 V, I = - 2.0 A 0.065 0.085 GS D a R Drain-Source On-State Resistance DS(on) V = - 1.8 V, I = - 1.0 A 0.090 0.110 GS D V = - 1.5 V, I = - 0.5 A 0.110 0.165 GS D a g V = - 10 V, I = - 3.0 A 12 S Forward Transconductance fs DS D b Dynamic V = - 10 V, V = - 8 V, I = - 5.3 A Total Gate Charge 14 21 DS GS D Q g 7.6 12 Gate-Source Charge nC V = - 10 V, V = - 4.5 V, I = - 5.3 A Q 0.8 DS GS D gs Gate-Drain Charge Q 3.1 gd R Gate Resistance f = 1 MHz 0.4 2 4 k g Turn-On Delay Time t 0.20 0.3 d(on) Rise Time t V = - 10 V, R = 2.3 1.00 1.50 r DD L I - 4.3 A, V = - 4.5 V, R = 1 Turn-Off Delay Time t 4.00 6.00 D GEN g d(off) t Fall Time 2.00 3.00 f s Turn-On Delay Time t 0.09 0.14 d(on) Rise Time t V = - 10 V, R = 2.3 0.40 0.60 r DD L I - 4.3 A, V = - 8 V, R = 1 Turn-Off Delay Time t 5.20 7.80 D GEN g d(off) t Fall Time 2.30 3.50 f Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current I T = 25 C - 2.0 S C A Pulse Diode Forward Current I - 8 SM V I = - 3 A, V = 0 V Body Diode Voltage - 0.8 - 1.2 V SD S GS t Body Diode Reverse Recovery Time 30 60 ns rr Body Diode Reverse Recovery Charge Q 20 40 nC rr I = - 3 A, dI/dt = 100 A/s, T = 25 C F J Reverse Recovery Fall Time t 13 a ns t Reverse Recovery Rise Time 17 b Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 65526 2 S11-0453-Rev. B, 14-Mar-11 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000