Si2305CDS Vishay Siliconix P-Channel 8 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 d V (V) R () Q (Typ.) I (A) DS DS(on) g D Definition 0.035 at V = - 4.5 V - 5.8 GS TrenchFET Power MOSFET - 8 0.048 at V = - 2.5 V - 5.0 12 nC GS 100 % R Tested g 0.065 at V = - 1.8 V - 4.3 GS Compliant to RoHS Directive 2002/95/EC APPLICATIONS TO-236 Load Switch for Portable Devices (SOT-23) DC/DC Converter G 1 S 3 D S 2 G Top View Si2305CDS (N5)* * Marking Code D P-Channel MOSFET Ordering Information: Si2305CDS-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted A Parameter Symbol LimitUnit V Drain-Source Voltage - 8 DS V Gate-Source Voltage V 8 GS T = 25 C - 5.8 C T = 70 C - 4.7 C I Continuous Drain Current (T = 150 C) D J a, b T = 25 C A - 4.4 a, b T = 70 C A A - 3.5 I Pulsed Drain Current (10 s Pulse Width) - 20 DM T = 25 C - 1.4 C I Continuous Source-Drain Diode Current S a, b T = 25 C A - 0.8 T = 25 C 1.7 C T = 70 C 1.1 C P W Maximum Power Dissipation D a, b T = 25 C 0.96 A a, b T = 70 C A 0.62 Operating Junction and Storage Temperature Range T , T - 55 to 150 C J stg THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit a, c R t 5 s 100 130 Maximum Junction-to-Ambient thJA C/W Maximum Junction-to-Foot (Drain) Steady State R 60 75 thJF Notes: a. Surface mounted on 1 x 1 FR4 board. b. t = 5 s. c. Maximum under steady state conditions is 175 C/W. d. T = 25 C. C Document Number: 64847 www.vishay.com S10-0720-Rev. C, 29-Mar-10 1Si2305CDS Vishay Siliconix SPECIFICATIONS T = 25 C, unless otherwise noted J Parameter Symbol Test Conditions Min.Typ.Max.Unit Static V V = 0 V, I = - 250 A Drain-Source Breakdown Voltage - 8 V DS GS D V Temperature Coefficient V /T - 9 DS DS J I = - 250 A mV/C D V Temperature Coefficient V /T 2.5 GS(th) GS(th) J V V = V , I = - 250 A Gate-Source Threshold Voltage - 0.4 - 1 V GS(th) DS GS D I V = 0 V, V = 8 V Gate-Source Leakage 100 nA GSS DS GS V = - 8 V, V = 0 V - 1 DS GS I Zero Gate Voltage Drain Current A DSS V = - 8 V, V = 0 V, T = 55 C - 10 DS GS J a I V - 5 V, V = - 4.5 V - 10 A On-State Drain Current D(on) DS GS V = - 4.5 V, I = - 4.4 A 0.028 0.035 GS D a R V = - 2.5 V, I = - 3.8 A 0.039 0.048 Drain-Source On-State Resistance DS(on) GS D V = - 1.8 V, I = - 2 A 0.053 0.065 GS D a g V = - 4 V, I = - 4.4 A 17 S Forward Transconductance fs DS D b Dynamic Input Capacitance C 960 iss C V = - 4 V, V = 0 V, f = 1 MHz Output Capacitance 330 pF oss DS GS C Reverse Transfer Capacitance 300 rss Q V = - 4 V, V = - 8 V, I = - 4.4 A Total Gate Charge 20 30 g DS GS D Q Total Gate Charge 12 18 g nC Q V = - 4 V, V = - 4.5 V, I = - 4.4 A Gate-Source Charge 1.5 gs DS GS D Q Gate-Drain Charge 3.1 gd R Gate Resistance f = 1 MHz 1 5.1 10.2 g t Turn-On Delay Time 20 30 d(on) Rise Time t 20 30 V = - 4 V, R = 1.1 r DD L I - 3.5 A, V = - 4.5 V, R = 1 t Turn-Off Delay Time D GEN g 40 60 d(off) Fall Time t 10 15 f ns t Turn-On Delay Time 10 15 d(on) Rise Time t 10 15 V = - 4 V, R = 1.1 r DD L I - 3.5 A, V = - 8 V, R = 1 t Turn-Off Delay Time D GEN g 35 55 d(off) Fall Time t 10 15 f Drain-Source Body Diode Characteristics I T = 25 C Continuous Source-Drain Diode Current - 1.4 S C A I Pulse Diode Forward Current - 20 SM V I = - 3.5 A, V = 0 V Body Diode Voltage - 0.8 - 1.2 V SD S GS t Body Diode Reverse Recovery Time 35 55 ns rr Q Body Diode Reverse Recovery Charge 14 25 nC rr I = - 3.5 A, dI/dt = 100 A/s, T = 25 C F J t Reverse Recovery Fall Time 16 a ns Reverse Recovery Rise Time t 19 b Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 64847 2 S10-0720-Rev. C, 29-Mar-10