X-On Electronics has gained recognition as a prominent supplier of SI2306BDS-T1-E3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SI2306BDS-T1-E3 MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SI2306BDS-T1-E3 Vishay

SI2306BDS-T1-E3 electronic component of Vishay
SI2306BDS-T1-E3 Vishay
SI2306BDS-T1-E3 MOSFETs
SI2306BDS-T1-E3  Semiconductors

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See Product Specifications
Part No. SI2306BDS-T1-E3
Manufacturer: Vishay
Category: MOSFETs
Description: MOSFET 30V 4.0A 0.75W
Datasheet: SI2306BDS-T1-E3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
5: USD 0.5182 ea
Line Total: USD 2.59 
Availability - 4379
Ship by Thu. 13 Mar to Tue. 18 Mar
MOQ: 5  Multiples: 5
Pack Size: 5
Availability Price Quantity
1222
Ship by Thu. 06 Mar to Wed. 12 Mar
MOQ : 301
Multiples : 1
301 : USD 0.2162
316 : USD 0.2054
320 : USD 0.2033
331 : USD 0.1962
332 : USD 0.1958
500 : USD 0.1901
1000 : USD 0.1815

4379
Ship by Thu. 13 Mar to Tue. 18 Mar
MOQ : 5
Multiples : 5
5 : USD 0.5182
50 : USD 0.355
150 : USD 0.2851
500 : USD 0.211
3000 : USD 0.1918
6000 : USD 0.1804

1964
Ship by Tue. 04 Mar to Thu. 06 Mar
MOQ : 1
Multiples : 1
1 : USD 1.092
5 : USD 0.6636
43 : USD 0.4102
119 : USD 0.3878

2910
Ship by Thu. 06 Mar to Wed. 12 Mar
MOQ : 3000
Multiples : 3000
3000 : USD 0.2054
30000 : USD 0.2035

5141
Ship by Thu. 06 Mar to Wed. 12 Mar
MOQ : 334
Multiples : 1
334 : USD 0.3056
500 : USD 0.2946
1000 : USD 0.2849
2500 : USD 0.266
5000 : USD 0.2588

1222
Ship by Thu. 06 Mar to Wed. 12 Mar
MOQ : 320
Multiples : 1
320 : USD 0.2033
331 : USD 0.1962
332 : USD 0.1958
500 : USD 0.1901
1000 : USD 0.1815

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Tradename
Configuration
Height
Length
Series
Transistor Type
Width
Brand
Forward Transconductance - Min
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We are delighted to provide the SI2306BDS-T1-E3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SI2306BDS-T1-E3 and other electronic components in the MOSFETs category and beyond.

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The SI2306BDS-T1-E3 is a 30V MOSFET with 4.0A of output current rating and 0.75W of power dissipation rating, manufactured by Vishay. It is a medium voltage and low power N-Channel Enhancement Mode Field Effect Transistor. The part is designed for power management applications such as bridge rectifiers, Power-On Reset Circuits, LED lighting and switching circuits. The device has very low on-resistance and extremely low threshold voltage and therefore offers improved power efficiency in applications where space, weight or cost is limited. The SI2306BDS-T1-E3 is housed in the SOT23 package with a Pb-free lead finish.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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