New Product Si2309CDS Vishay Siliconix P-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free Option Available d V (V) R () Q (Typ.) I (A) DS DS(on) g D TrenchFET Power MOSFET 0.345 at V = - 10 V - 1.6 GS - 60 2.7 nC 0.450 at V = - 4.5 V - 1.4 GS APPLICATIONS Load Switch TO-236 (SOT-23) G 1 3 D S S 2 G Top View Si2309CDS (N9)* * Marking Code D Ordering Information: Si2309CDS-T1-E3 (Lead (Pb)-free) Si2309CDS-T1-GE3 (Lead (Pb)-free and Halogen-free) P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted A Parameter Symbol LimitUnit Drain-Source Voltage V - 60 DS V V Gate-Source Voltage 20 GS T = 25 C - 1.6 C T = 70 C - 1.3 C a, b I Continuous Drain Current (T = 150 C) D J a, b T = 25 C A - 1.2 a, b T = 70 C A - 1.0 A Pulsed Drain Current (10 s Pulse Width) I - 8 DM I Single Pulse Avalanche Current L = 0.1 mH - 5 AS T = 25 C - 1.4 C I Continuous Source-Drain Diode Current S a, b = 25 C T A - 0.9 T = 25 C 1.7 C T = 70 C 1.1 C P W Maximum Power Dissipation D a, b T = 25 C 1.0 A a, b T = 70 C A 0.67 , T Operating Junction and Storage Temperature Range T - 55 to 150 J stg C c 260 Soldering Recommendations (Peak Temperature) THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit a, c R t 5 s 92 120 Maximum Junction-to-Ambient thJA C/W R Maximum Junction-to-Foot (Drain) Steady State 58 73 thJF Notes: a. Surface Mounted on 1 x 1 FR4 board. b. t = 5 s. c. Maximum under Steady State conditions is 166 C/W. d. When T = 25 C. C Document Number: 68980 www.vishay.com S-82584-Rev. A, 27-Oct-08 1New Product Si2309CDS Vishay Siliconix SPECIFICATIONS T = 25 C, unless otherwise noted J Parameter Symbol Test Conditions Min.Typ.Max.Unit Static V V = 0 V, I = - 250 A Drain-Source Breakdown Voltage - 60 V DS GS D V Temperature Coefficient V /T - 65 DS DS J I = - 250 A mV/C D V Temperature Coefficient V /T 4.5 GS(th) GS(th) J V V = V , I = - 250 A Gate-Source Threshold Voltage - 1 - 3 V GS(th) DS GS D I V = 0 V, V = 20 V Gate-Source Leakage - 100 nA GSS DS GS V = - 60 V, V = 0 V - 1 DS GS Zero Gate Voltage Drain Current I A DSS V = - 60 V, V = 0 V, T = 55 C - 10 DS GS J a I V 5 V, V = - 10 V - 6 A On-State Drain Current D(on) DS GS V = - 10 V, I = - 1.25 A 0.285 0.345 GS D a R Drain-Source On-State Resistance DS(on) V = - 4.5 V, I = - 1.0 A 0.360 0.450 GS D a g V = - 10 V, I = - 1.0 A 2.8 S Forward Transconductance fs DS D b Dynamic C Input Capacitance 210 iss Output Capacitance C V = - 30 V, V = 0 V, f = 1 MHz 28 pF oss DS GS C Reverse Transfer Capacitance 20 rss Q Total Gate Charge 2.7 4.1 g Q V = - 30 V, V = - 4.5 V, I = - 1.25 A Gate-Source Charge 0.8 nC gs DS GS D Q Gate-Drain Charge 1.2 gd R Gate Resistance f = 1 MHz 7 g t Turn-On Delay Time 40 60 d(on) t Rise Time V = - 30 V, R = 30 35 55 r DD L I - 1 A, V = - 4.5 V, R = 1 t Turn-Off Delay Time D GEN g 15 25 d(off) Fall Time t 10 20 f ns t Turn-On Delay Time 510 d(on) Rise Time t 10 20 V = - 30 V, R = 30 r DD L I - 1 A, V = - 10 V, R = 1 t Turn-Off Delay Time D GEN g 15 25 d(off) Fall Time t 10 20 f Drain-Source Body Diode Characteristics I T = 25 C Continuous Source-Drain Diode Current - 1.4 S C A I Pulse Diode Forward Current - 8 SM V I = - 0.75 A, V = 0 V Body Diode Voltage - 0.8 - 1.2 V SD S GS t Body Diode Reverse Recovery Time 30 60 ns rr Q Body Diode Reverse Recovery Charge 33 60 nC rr I = - 1.25 A, dI/dt = 100 A/s, T = 25 C F J t Reverse Recovery Fall Time 18 a ns t Reverse Recovery Rise Time 12 b Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 68980 2 S-82584-Rev. A, 27-Oct-08