Si1970DH Vishay Siliconix Dual N-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 a V (V) R () Q (Typ.) I (A) DS DS(on) g D Definition a 0.225 at V = 4.5 V GS 1.3 TrenchFET Power MOSFET 30 1.15 nC a 0.345 at V = 2.5 V Compliant to RoHS Directive 2002/95/EC GS 1.3 APPLICATIONS SOT-363 Load Switch for Portable Applications SC-70 (6-LEADS) D D 1 2 S 1 6 D 1 1 Marking Code 5 G 2 G 1 2 CD XX Lot Traceability and Date Code G G 1 2 D 3 4 S 2 2 Part Code Top View S S 1 2 Ordering Information: Si1970DH-T1-E3 (Lead (Pb)-free) Si1970DH-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Ch a nnel MO S FET N-Ch a nnel MO S FET ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted A Parameter Symbol LimitUnit Drain-Source Voltage V 30 DS V Gate-Source Voltage V 12 GS a T = 25 C 1.3 C a T = 70 C 1.3 C Continuous Drain Current (T = 150 C) I J D a T = 25 C 1.3 A T = 70 C 1.1 A A Pulsed Drain Current I 4 DM T = 25 C 1.0 C Continuous Source-Drain Diode Current I S c T = 25 C 0.61 A T = 25 C 1.25 C T = 70 C 0.8 C Maximum Power Dissipation P W D b, c T = 25 C 0.74 A b, c T = 70 C 0.47 A Operating Junction and Storage Temperature Range T , T - 55 to 150 J stg C d, e Soldering Recommendations (Peak Temperature) 260 THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit b, f Maximum Junction-to-Ambient t 5 s R 130 170 thJA C/W Maximum Junction-to-Foot (Drain) Steady State R 80 100 thJF Notes: a. Package limited. b. Surface mounted on 1 x 1 FR4 board. c. t = 5 s. d. Maximum under steady state conditions is 220 C/W. Document Number: 74343 www.vishay.com S10-0721-Rev. B, 29-Mar-10 1 YYSi1970DH Vishay Siliconix SPECIFICATIONS T = 25 C, unless otherwise noted J Parameter Symbol Test Conditions Min.Typ.Max.Unit Static Drain-Source Breakdown Voltage V V = 0 V, I = 250 A 30 V DS GS D V Temperature Coefficient V /T 25 DS DS J I = 250 A mV/C D V Temperature Coefficient V /T - 3.2 GS(th) GS(th) J Gate-Source Threshold Voltage V V = V , I = 250 A 0.6 1.6 V GS(th) DS GS D Gate-Source Leakage I V = 0 V, V = 12 V 100 ns GSS DS GS V = 30 V, V = 0 V 1 DS GS Zero Gate Voltage Drain Current I A DSS V = 30 V, V = 0 V, T = 55 C 10 DS GS J a On-State Drain Current I V 5 V, V = 4.5 V 4 A D(on) DS GS V = 4.5 V, I = 1.2 A 0.185 0.225 GS D a Drain-Source On-State Resistance R DS(on) V = 2.5 V, I = 0.29 A 0.285 0.345 GS D a Forward Transconductance g V = 15 V, I = 1.2 A 2.5 S fs DS D b Dynamic Input Capacitance C 95 iss Output Capacitance C V = 15 V, V = 0 V, f = 1 MHz 17 pF oss DS GS Reverse Transfer Capacitance C 9 rss V = 15 V, V = 10 V, I = 1.4 A 2.5 3.8 DS GS D Total Gate Charge Q g 1.15 1.7 nC Gate-Source Charge Q V = 10 V, V = 4.5 V, I = 1.4 A 0.4 gs DS GS D Gate-Drain Charge Q 0.3 gd Gate Resistance R f = 1 MHz 4 g Turn-On Delay Time t 915 d(on) Rise Time t 20 30 r V = 15 V, R = 13.6 DD L I 1.1 A, V = 4.5 V, R = 1 Turn-Off Delay Time t 15D GEN g 25 d(off) Fall Time t 15 25 f ns Turn-on Delay Time t 510 d(on) Rise Time t V = 15 V, R = 13.6 10 15 r DD L I 1.1 A, V N = 10 V, R = 1 Turn-Off Delay Time t D GE g 10 15 d(off) Fall Time t 612 r Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current I T = 25 C 1 S C A Pulse Diode Forward Current I 4 SM Body Diode Voltage V I = 1.1 A, V = 0 V 0.85 1.2 V SD S GS Body Diode Reverse Recovery Time t 20 40 ns rr Body Diode Reverse Recovery Charge Q 10 20 nC rr I = 1.1 A, dI/dt = 100 A/s, T = 25 C F J Reverse Recovery Fall Time t 16.5 a ns Reverse Recovery Rise Time t 3.5 b Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 74343 2 S10-0721-Rev. B, 29-Mar-10