X-On Electronics has gained recognition as a prominent supplier of SI2302DDS-T1-GE3 mosfet across the USA, India, Europe, Australia, and various other global locations. SI2302DDS-T1-GE3 mosfet are a product manufactured by Vishay. We provide cost-effective solutions for mosfet, ensuring timely deliveries around the world.

SI2302DDS-T1-GE3 Vishay

SI2302DDS-T1-GE3 electronic component of Vishay
Images are for reference only
See Product Specifications
Part No.SI2302DDS-T1-GE3
Manufacturer: Vishay
Category:MOSFET
Description: MOSFET 20V Vds 8V Vgs SOT-23
Datasheet: SI2302DDS-T1-GE3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

3000: USD 0.0966 ea
Line Total: USD 289.8

Availability - 2910
Ships to you between
Thu. 06 Jun to Wed. 12 Jun
MOQ: 3000  Multiples: 3000
Pack Size: 3000
Availability Price Quantity
2910 - WHS 1


Ships to you between Thu. 06 Jun to Wed. 12 Jun

MOQ : 3000
Multiples : 3000
3000 : USD 0.0966
9000 : USD 0.0966
12000 : USD 0.0966
30000 : USD 0.0966
45000 : USD 0.0966

2910 - WHS 2


Ships to you between Thu. 06 Jun to Wed. 12 Jun

MOQ : 3000
Multiples : 3000
3000 : USD 0.1406

635 - WHS 3


Ships to you between
Thu. 13 Jun to Tue. 18 Jun

MOQ : 5
Multiples : 5
5 : USD 0.2854
50 : USD 0.2314
150 : USD 0.2082
500 : USD 0.1793
3000 : USD 0.1442
6000 : USD 0.1365

304270 - WHS 4


Ships to you between Wed. 12 Jun to Fri. 14 Jun

MOQ : 1
Multiples : 1
1 : USD 0.5175
10 : USD 0.399
100 : USD 0.2358
1000 : USD 0.1472
3000 : USD 0.1253
9000 : USD 0.1173
24000 : USD 0.1162
99000 : USD 0.1139

4589 - WHS 5


Ships to you between Thu. 06 Jun to Wed. 12 Jun

MOQ : 1
Multiples : 1
1 : USD 0.572
10 : USD 0.4342
100 : USD 0.2821
114 : USD 0.1456
314 : USD 0.1378

1319 - WHS 6


Ships to you between Thu. 06 Jun to Wed. 12 Jun

MOQ : 184
Multiples : 1
184 : USD 0.2242
200 : USD 0.2227
500 : USD 0.1885
1000 : USD 0.1787

14550 - WHS 7


Ships to you between Thu. 06 Jun to Wed. 12 Jun

MOQ : 3000
Multiples : 3000
3000 : USD 0.1277
9000 : USD 0.1179
24000 : USD 0.1134
99000 : USD 0.1113

2623 - WHS 8


Ships to you between Thu. 06 Jun to Wed. 12 Jun

MOQ : 55
Multiples : 1
55 : USD 0.3897
100 : USD 0.2426
250 : USD 0.2401
500 : USD 0.2376
1000 : USD 0.1413

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Tradename
Configuration
Series
Transistor Type
Brand
Forward Transconductance - Min
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Category
Brand Category
LoadingGif

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We are delighted to provide the SI2302DDS-T1-GE3 from our MOSFET category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SI2302DDS-T1-GE3 and other electronic components in the MOSFET category and beyond.

The SI2302DDS-T1-GE3 is a silicon carbide Schottky diode from the Vishay Semiconductor product line. It features fast switching with a soft recovery behavior, low leakage current and a very low forward voltage drop. The diode is optimized for high-temperature applications up to +175°C. It also offers an ultra-low thermal resistance (Rth) and a maximum current of 5A. The package is DPAK3 and the part is RoHS compliant.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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