X-On Electronics has gained recognition as a prominent supplier of SI2302DDS-T1-GE3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SI2302DDS-T1-GE3 MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SI2302DDS-T1-GE3 Vishay

SI2302DDS-T1-GE3 electronic component of Vishay
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See Product Specifications
Part No.SI2302DDS-T1-GE3
Manufacturer: Vishay
Category: MOSFETs
Description: MOSFET 20V Vds 8V Vgs SOT-23
Datasheet: SI2302DDS-T1-GE3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.462 ea
Line Total: USD 0.46 
Availability - 288059
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
5270
Ship by Thu. 05 Dec to Tue. 10 Dec
MOQ : 5
Multiples : 5
5 : USD 0.2609
50 : USD 0.2116
150 : USD 0.1905
500 : USD 0.1641
3000 : USD 0.1317
6000 : USD 0.1247

288059
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ : 1
Multiples : 1
1 : USD 0.462
10 : USD 0.3432
100 : USD 0.1815
1000 : USD 0.1485
3000 : USD 0.1199
9000 : USD 0.1111
99000 : USD 0.1089

4579
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ : 1
Multiples : 1
1 : USD 0.56
10 : USD 0.42
25 : USD 0.3192
100 : USD 0.252
114 : USD 0.1498

1299
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 82
Multiples : 1
82 : USD 0.5005
127 : USD 0.3202
500 : USD 0.2422
1000 : USD 0.2

1702
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 55
Multiples : 1
55 : USD 0.1413

5820
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 3000
Multiples : 3000
3000 : USD 0.1389
9000 : USD 0.1278
99000 : USD 0.1128

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Tradename
Configuration
Series
Transistor Type
Brand
Forward Transconductance - Min
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Category
Brand Category
LoadingGif
 
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We are delighted to provide the SI2302DDS-T1-GE3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SI2302DDS-T1-GE3 and other electronic components in the MOSFETs category and beyond.

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The SI2302DDS-T1-GE3 is a silicon carbide Schottky diode from the Vishay Semiconductor product line. It features fast switching with a soft recovery behavior, low leakage current and a very low forward voltage drop. The diode is optimized for high-temperature applications up to +175°C. It also offers an ultra-low thermal resistance (Rth) and a maximum current of 5A. The package is DPAK3 and the part is RoHS compliant.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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