X-On Electronics has gained recognition as a prominent supplier of SI2302CDS-T1-E3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SI2302CDS-T1-E3 MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SI2302CDS-T1-E3 Vishay

SI2302CDS-T1-E3 electronic component of Vishay
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Part No.SI2302CDS-T1-E3
Manufacturer: Vishay
Category: MOSFETs
Description: MOSFET 20V 2.9A 0.86W 57mohm @ 4.5V
Datasheet: SI2302CDS-T1-E3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
3000: USD 0.1241 ea
Line Total: USD 372.3 
Availability - 5820
Ship by Tue. 19 Nov to Mon. 25 Nov
MOQ: 3000  Multiples: 3000
Pack Size: 3000
Availability Price Quantity
5820
Ship by Tue. 19 Nov to Mon. 25 Nov
MOQ : 3000
Multiples : 3000
3000 : USD 0.1241
6000 : USD 0.1241
12000 : USD 0.1241
15000 : USD 0.1241
45000 : USD 0.1241

2907
Ship by Tue. 26 Nov to Fri. 29 Nov
MOQ : 5
Multiples : 5
5 : USD 0.344
50 : USD 0.2784
150 : USD 0.2503
500 : USD 0.2152
3000 : USD 0.1751
6000 : USD 0.1656

446321
Ship by Fri. 15 Nov to Tue. 19 Nov
MOQ : 1
Multiples : 1
1 : USD 0.3795
10 : USD 0.2162
100 : USD 0.1472
1000 : USD 0.1345
3000 : USD 0.1288
24000 : USD 0.1242

20370
Ship by Tue. 19 Nov to Mon. 25 Nov
MOQ : 3000
Multiples : 3000
3000 : USD 0.1251

   
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Continuous Drain Current
Drain-Source Breakdown Voltage
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We are delighted to provide the SI2302CDS-T1-E3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SI2302CDS-T1-E3 and other electronic components in the MOSFETs category and beyond.

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Si2302CDS www.vishay.com Vishay Siliconix N-Channel 20 V (D-S) MOSFET FEATURES SOT-23 (TO-236) TrenchFET power MOSFET D Material categorization: 3 for definitions of compliance please see www.vishay.com/doc 99912 Available 2 S APPLICATIONS Load switching for portable devices 1 D G DC/DC converter Top View Marking code: N2 G PRODUCT SUMMARY V (V) 20 DS R max. ( ) at V = 4.5 V 0.057 DS(on) GS R max. ( ) at V = 2.5 V 0.075 DS(on) GS S Q typ. (nC) 3.5 g N-Channel MOSFET I (A) 2.9 D Configuration Single ORDERING INFORMATION Package SOT-23 Lead (Pb)-free Si2302CDS-T1-E3 Lead (Pb)-free and halogen-free Si2302CDS-T1-GE3 ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) A STEADY PARAMETER SYMBOL 5 S UNIT STATE Drain-source voltage V 20 20 DS V Gate-source voltage V 8 8 GS T = 25 C 2.9 2.6 A a Continuous drain current (T = 150 C) I J D T = 70 C 2.3 2.1 A A b Pulsed drain current I 10 10 DM a Continuous source current (diode conduction) I 0.72 0.6 S T = 25 C 0.86 0.71 A a Power dissipation P W D T = 70 C 0.55 0.46 A Operating junction and storage temperature range T , T -55 to +150 -55 to +150 C J stg THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYPICALMAXIMUMUNIT t 5 s 120 145 a Maximum junction-to-ambient R thJA Steady state 140 175 C/W Maximum junction-to-foot Steady state R 62 78 thJF Notes a. Surface mounted on 1 x 1 FR4 board b. Pulse width limited by maximum junction temperature S12-2336-Rev. D, 01-Oct-12 Document Number: 68645 1 For technical questions, contact: pmostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 Si2302CDS www.vishay.com Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) A LIMITS PARAMETER SYMBOL TEST CONDITIONS UNIT MIN. TYP. MAX. Static Drain-source breakdown voltage V V = 0 V, I = 250 A 20 - - DS GS D V Gate-threshold voltage V V = V , I = 250 A 0.40 - 0.85 GS(th) DS GS D Gate-body leakage I V = 0 V, V = 8 V - - 100 nA GSS DS GS V = 20 V, V = 0 V - - 0.1 DS GS Zero gate voltage drain current I V = 20 V, V = 0 V, T = 50 C - - 4 A DSS DS GS J V = 20 V, V = 0 V, T = 70 C - - 15 DS GS J a On-state drain current I V 10 V, V = 4.5 V 6 - - A D(on) DS GS V = 4.5 V, I = 3.6 A - 0.045 0.057 GS D a Drain-source on-resistance R DS(on) V = 2.5 V, I = 3.1 A - 0.056 0.075 GS D a Forward transconductance g V = 5 V, I = 3.6 A - 13 - S fs DS D Diode forward voltage V I = 0.95 A, V = 0 V - 0.7 1.2 V SD S GS b Dynamic Total gate charge Q -3.5 5.5 g Gate-source charge Q V = 10 V, V = 4.5 V, I = 3.6 A -0.6 - nC gs DS GS D Gate-drain charge Q -0.45- gd Gate resistance R f = 1 MHz 2 4 8 g Switching Turn-on delay time t -8 15 d(on) Rise time t -7 15 r V = 10 V, R = 2.78 DD L I 3.6 A, V = 4.5 V, R = 1 Turn-off delay time t -3D GEN g 045 ns d(off) Fall time t -7 15 f Source-drain reverse recovery time t -8.5 15 rr I = 3.6 A, di/dt = 100 A/s F Body diode reverse recovery charge Q -2 4 nC rr Notes a. Pulse test: Pulse width 300 s, duty cycle 2 % b. Guaranteed by design, not subject to production testing Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S12-2336-Rev. D, 01-Oct-12 Document Number: 68645 2 For technical questions, contact: pmostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000

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8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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