X-On Electronics has gained recognition as a prominent supplier of SI2302ADS-T1-E3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SI2302ADS-T1-E3 MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SI2302ADS-T1-E3 Vishay

SI2302ADS-T1-E3 electronic component of Vishay
SI2302ADS-T1-E3 Vishay
SI2302ADS-T1-E3 MOSFETs
SI2302ADS-T1-E3  Semiconductors

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See Product Specifications
Part No. SI2302ADS-T1-E3
Manufacturer: Vishay
Category: MOSFETs
Description: MOSFET 20V 2.4A 0.06Ohm
Datasheet: SI2302ADS-T1-E3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
3000: USD 0.1586 ea
Line Total: USD 475.8 
Availability - 0
MOQ: 3000  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Fri. 07 Feb to Thu. 13 Feb
MOQ : 3000
Multiples : 1
3000 : USD 0.1586
3000 : USD 0.1586
3000 : USD 0.1586
6000 : USD 0.1586
18000 : USD 0.1586
36000 : USD 0.1586

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs - Gate-Source Breakdown Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Qg - Gate Charge
Channel Mode
Configuration
Brand
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
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We are delighted to provide the SI2302ADS-T1-E3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SI2302ADS-T1-E3 and other electronic components in the MOSFETs category and beyond.

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Si2302ADS Vishay Siliconix N-Channel 2.5-V (G-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 V (V) R ()I (A) DS DS(on) D Definition 0.060 at V = 4.5 V 2.4 100 % R Tested GS g 20 Compliant to RoHS Directive 2002/95/EC 0.115 at V = 2.5 V 2.0 GS TO-236 (SOT-23) G 1 3 D S 2 Top View Si2302ADS (2A)* * Marking Code Ordering Information: Si2302ADS-T1-E3 (Lead (Pb)-free) Si2302ADS-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) A Parameter Symbol 5 sSteady State Unit Drain-Source Voltage V 20 DS V Gate-Source Voltage V 8 GS T = 25 C 2.4 2.1 A a I Continuous Drain Current (T = 150 C) D J T = 70 C 1.9 1.7 A A a I 10 Pulsed Drain Current DM a I 0.94 0.6 Continuous Source Current (Diode Conduction) S T = 25 C 0.9 0.7 A a Power Dissipation P W D T = 70 C 0.57 0.46 A Operating Junction and Storage Temperature Range T , T - 55 to 150 C J stg THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximum Unit t 5 s 115 140 a R C/W Maximum Junction-to-Ambient thJA Steady State 140 175 Notes: a. Surface mounted on FR4 board. For SPICE model information via the Worldwide Web: www.vishay.com/www/product/spice.htm Document Number: 71831 www.vishay.com S11-2000-Rev. J, 10-Oct-11 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000Si2302ADS Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) A Parameter Symbol Test Conditions Min.Typ.Max.Unit Static Drain-Source Breakdown Voltage V V = 0 V, I = 10 A 20 (BR)DSS GS D V Gate Threshold Voltage V V = V , I = 50 A 0.65 0.95 1.2 GS(th) DS GS D Gate Body Leakage I V = 0 V, V = 8 V 100 nA GSS DS GS V = 20 V, V = 0 V 0.1 DS GS Zero Gate Voltage Drain Current I A DSS V = 20 V, V = 0 V, T = 55 C 2.0 DS GS J V 5 V, V = 4.5 V 6 DS GS a On-State Drain Current I A D(on) V 5 V, V = 2.5 V 4 DS GS b V = 4.5 V, I = 3.6 A 0.045 0.060 GS D a Drain-Source On-Resistance R DS(on) V = 2.5 V, I = 3.1 A 0.070 0.115 GS D a Forward Transconductance g V = 5 V, I = 3.6 A 8 S fs DS D Diode Forward Voltage V I = 0.94 A, V = 0 V 0.76 1.2 V SD S GS Dynamic Total Gate Charge Q 4.0 10 g Gate-Source Charge Q V = 10 V, V = 4.5 V, I = 3.6 A 0.65 nC gs DS GS D Gate-Drain Charge Q 1.5 gd Input Capacitance C 300 iss Output Capacitance C V = 10 V, V = 0 V, f = 1 MHz 120 pF oss DS GS Reverse Transfer Capacitance C 80 rss Gate Resistance R f = 1 MHz 0.5 1 2 g Switching t Turn-On Delay Time 715 d(on) t Rise Time V = 10 V, R = 2.8 55 80 r DD L ns t I 3.6 A, V = 4.5 V, R = 6 Turn-Off DelayTime 16 60 d(off) D GEN g t Fall Time 10 25 f Notes: a. Pulse test PW 300 s, duty cycle 2 %. b. Effective for production 10/04. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 71831 2 S11-2000-Rev. J, 10-Oct-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000

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8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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