Si1972DH Vishay Siliconix Dual N-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 a V (V) R ()I (A) Q (Typ.) Definition DS DS(on) D g TrenchFET Power MOSFET 0.190 at V = 10 V 1.3 GS 30 0.91 nC 100 % R Tested 0.344 at V = 4.5 V 1.3 g GS Compliant to RoHS Directive 2002/95/EC APPLICATIONS SOT-363 SC-70 (6-LEADS) Load Switch for Portable Applications S 1 6 D 1 1 D D 1 2 Marking Code 5 G 2 G 1 2 CE XX Lot Traceability and Date Code D 3 4 S 2 2 G G Part Code 1 2 Top View Ordering Information: S S 1 2 Si1972DH-T1-E3 (Lead (Pb)-free) Si1972DH-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Ch a nnel MO S FET N-Ch a nnel MO S FET ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) A Parameter Symbol LimitUnit Drain-Source Voltage V 30 DS V Gate-Source Voltage V 20 GS a T = 25 C 1.3 C a = 70 C T 1.3 C Continuous Drain Current (T = 150 C) I J D a T = 25 C 1.3 A T = 70 C 1.2 A A Pulsed Drain Current I 4 DM T = 25 C 1 C Continuous Source-Drain Diode Current I S c T = 25 C 0.61 A T = 25 C 1.25 C T = 70 C 0.8 C Maximum Power Dissipation W P D b, c T = 25 C 0.74 A b, c T = 70 C 0.47 A Operating Junction and Storage Temperature Range T , T - 55 to 150 J stg C d, e Soldering Recommendations (Peak Temperature) 260 THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit b, f R t 5 s 130 170 Maximum Junction-to-Ambient thJA C/W R Maximum Junction-to-Foot (Drain) Steady State 80 100 thJF Notes: a. Package limited. b. Surface mounted on 1 x 1 FR4 board. c. t = 5 s. d. Maximum under steady state conditions is 220 C/W. Document Number: 74398 www.vishay.com S12-0335-Rev. C, 13-Feb-12 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 YYSi1972DH Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) J Parameter Symbol Test Conditions Min. Typ.Max.Unit Static Drain-Source Breakdown Voltage V V = 0 V, I = 250 A 30 V DS GS D V Temperature Coefficient V /T 23.5 DS DS J I = 250 A mV/C D V /T V Temperature Coefficient - 4.6 GS(th) J GS(th) Gate-Source Threshold Voltage V V = V , I = 250 A 1.5 2.8 V GS(th) DS GS D I Gate-Source Leakage V = 0 V, V = 20 V 100 ns GSS DS GS V = 30 V, V = 0 V 1 DS GS Zero Gate Voltage Drain Current I A DSS V = 30 V, V = 0 V, T = 55 C 10 DS GS J a I On-State Drain Current V 5 V, V = 10 V 4 A D(on) DS GS V = 10 V, I = 1.3 A 0.155 0.225 GS D a Drain-Source On-State Resistance R DS(on) V = 4.5 V, I = 0.29 A 0.278 0.340 GS D a g Forward Transconductance V = 15 V, I = 1.3 A 1.4 S fs DS D b Dynamic C Input Capacitance 75 iss Output Capacitance C V = 15 V, V = 0 V, f = 1 MHz 18 pF oss DS GS C Reverse Transfer Capacitance 6 rss V = 15 V, V = 10 V, I = 1.3 A 1.85 2.8 DS GS D Total Gate Charge Q g 0.91 1.4 nC Q Gate-Source Charge V = 15 V, V = 4.5 V, I = 1.3 A 0.51 gs DS GS D Gate-Drain Charge Q 0.3 gd R Gate Resistance f = 1 MHz 0.9 4.5 9 g t Turn-On Delay Time 15 25 d(on) Rise Time t 50 75 r V = 15 V, R = 12.5 DD L I 1.2 A, V = 4.5 V, R = 1 t Turn-Off Delay Time D GEN g 715 d(off) Fall Time t 15 25 f ns Turn-on Delay Time t 510 d(on) t Rise Time V = 15 V, R = 12.5 10 15 r DD L I 1.2 A, V = 10 V, R = 1 Turn-Off Delay Time t D GEN g 10 15 d(off) t Fall Time 612 r Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current I T = 25 C 1 S C A I Pulse Diode Forward Current 4 SM Body Diode Voltage V I = 1.2 A, V = 0 V 0.85 1.2 V SD S GS t Body Diode Reverse Recovery Time 20 40 ns rr Q 18 36 nC Body Diode Reverse Recovery Charge rr I = 1.2 A, dI/dt = 100 A/s, T = 25 C F J Reverse Recovery Fall Time t 16 a ns t Reverse Recovery Rise Time 4 b Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 74398 2 S12-0335-Rev. C, 13-Feb-12 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000