Si1902DL Vishay Siliconix Dual N-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 V (V) R ( )I (A) DS DS(on) D Definition TrenchFET Power MOSFETs: 2.5 V Rated 0.385 at V = 4.5 V 0.70 GS 20 100 % R Tested g 0.630 at V = 2.5 V 0.54 GS Compliant to RoHS Directive 2002/95/EC SOT-363 SC-70 (6-LEADS) S D 1 6 M arkin g C ode 1 1 Marking Code PAPA XX 5 G 2 G 1 2 Lot TLot Traceability and Date Code Part Code D 3 4 S 2 2 Top View Ordering Information: Si1902DL-T1-E3 (Lead (Pb)-free with Tape and Reel) Si1902DL-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) A Parameter Symbol 5 s Steady State Unit V Drain-Source Voltage 20 DS V V Gate-Source Voltage 12 GS T = 25 C 0.70 0.66 A a I Continuous Drain Current (T = 150 C) D J T = 85 C 0.50 0.48 A A I 1 Pulsed Drain Current DM a I 0.25 0.23 Continuous Source Current (Diode Conduction) S T = 25 C 0.30 0.27 A a P W Maximum Power Dissipation D T = 85 C 0.16 0.14 A T , T Operating Junction and Storage Temperature Range - 55 to 150 C J stg THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit t 5 s 360 415 a R Maximum Junction-to-Ambient thJA Steady State 400 460 C/W R Maximum Junction-to-Foot (Drain) Steady State 300 350 thJF Notes: a. Surface Mounted on 1 x 1 FR4 board. Document Number: 71080 www.vishay.com S11-2043-Rev. J, 17-Oct-11 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 YY YYYSi1902DL Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) J Parameter Symbol Test Conditions Min.Typ.Max.Unit Static V V = V , I = 250 A Gate Threshold Voltage 0.6 1.5 V GS(th) DS GS D I V = 0 V, V = 12 V Gate-Body Leakage 100nA GSS DS GS V = 16 V, V = 0 V 1 DS GS I Zero Gate Voltage Drain Current A DSS V = 16 V = 0 V, T = 85C 5 DS GS J a I V 5 V, V = 4.5 V 1 A On-State Drain Current D(on) DS GS V = 4.5 V, I = 0.66 A 0.320 0.385 GS D a R Drain-Source On-State Resistance DS(on) V = 2.5 V, I = 0.40 A 0.560 0.630 GS D a g V = 10 V, I = 0.66 A 1.5 S Forward Transconductance fs DS D a V I = 0.23 A, V = 0 V 0.8 1.2 V Diode Forward Voltage SD S GS b Dynamic Total Gate Charge Q 0.8 1.2 g Q V = 10 V, V = 4.5 V, I = 0.66 A Gate-Source Charge 0.06 nC gs DS GS D Gate-Drain Charge Q 0.30 gd Gate Resistance R f = 1 MHz 0.2 1 1.7 g Turn-On Delay Time t 10 20 d(on) t Rise Time V = 10 V, R = 20 16 30 r DD L I 0.5 A, V = 4.5 V, R = 6 Turn-Off DelayTime t 10 20 ns D GEN g d(off) t Fall Time 10 20 f Source-Drain Reverse Recovery Time t I = 0.23 A, dI/dt = 100 A/s 20 40 rr F Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS (25 C, unless otherwise noted) 1.0 1.0 V = 5 V thru 2.5 V GS 0.8 0.8 2 V 0.6 0.6 0.4 0.4 T = 125 C C 0.2 0.2 1.5 V 25 C - 55 C 1 V 0.0 0.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0.0 0.5 1.0 1.5 2.0 2.5 V - Drain-to-Source Voltage (V) V - Gate-to-Source Voltage (V) DS GS Output Characteristics Transfer Characteristics www.vishay.com Document Number: 71080 2 S11-2043-Rev. J, 17-Oct-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 I - Drain Current (A) D I - Drain Current (A) D