New Product Si1489EDH Vishay Siliconix P-Channel 8 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 a V (V) R () Q (Typ.) I (A) DS DS(on) g D Definition e 0.048 at V = - 4.5 V - 2.0 GS TrenchFET Power MOSFET e 0.059 at V = - 2.5 V - 2.0 GS 100 % R Tested g e 0.073 at V = - 1.8 V - 8 - 2.0 10.5 nC Typical ESD Performance 2000 V in HBM GS Built in ESD Protection with Zener Diode 0.097 at V = - 1.5 V - 1.5 GS Compliant to RoHS Directive 2002/95/EC 0.190 at V = - 1.2 V - 0.5 GS APPLICATIONS Load Switch for Portable Devices - Cellular Phone/Smart Phone SOT-363 - DSC SC-70 (6-LEADS) S - Portable Game Console - MP3 D 1 6 D - GPS - Tablet PC Marking Code 5 D 2 D BS XX G Lot Traceability R G 3 4 S and Date Code Part Code Top View D Ordering Information: Si1489EDH-T1-GE3 (Lead (Pb)-free and Halogen-free) P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) A Parameter Symbol LimitUnit Drain-Source Voltage V - 8 DS V Gate-Source Voltage V 5 GS a, e T = 25 C - 2.0 C e T = 70 C - 2.0 C Continuous Drain Current (T = 150 C) I J D b, c, e T = 25 C - 2.0 A b, c, e T = 70 C A - 2.0 A Pulsed Drain Current (t = 300 s) I - 8 DM a, e T = 25 C - 2.0 C Continuous Source-Drain Diode Current I S b, c T = 25 C - 1.3 A T = 25 C 2.8 C T = 70 C 1.8 C Maximum Power Dissipation P W D b, c T = 25 C 1.56 A b, c T = 70 C 1 A T , T Operating Junction and Storage Temperature Range - 55 to 150 J stg C d, e 260 Soldering Recommendations (Peak Temperature) THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit b, d t 5 s R 60 80 Maximum Junction-to-Ambient thJA C/W Maximum Junction-to-Foot (Drain) Steady State R 34 45 thJF Notes: a. T = 25 C. C b. Surface mounted on 1 x 1 FR4 board. c. t = 5 s. d. Maximum under steady state conditions is 125 C/W. e. Package limited. Document Number: 67491 www.vishay.com S11-0610-Rev. A, 04-Apr-11 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 YYNew Product Si1489EDH Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) J Parameter Symbol Test Conditions Min.Typ.Max.Unit Static V V = 0 V, I = - 250 A Drain-Source Breakdown Voltage - 8 V DS GS D V Temperature Coefficient V /T - 2 DS DS J I = - 250 A mV/C D V Temperature Coefficient V /T 2.2 GS(th) GS(th) J V V = V , I = - 250 A Gate-Source Threshold Voltage - 0.35 - 0.7 V GS(th) DS GS D I V = 0 V, V = 5 V Gate-Source Leakage 5 GSS DS GS V = - 8 V, V = 0 V - 1 A DS GS Zero Gate Voltage Drain Current I DSS V = - 8 V, V = 0 V, T = 55 C - 10 DS GS J a I V - 5 V, V = - 4.5 V - 8 A On-State Drain Current D(on) DS GS V = - 4.5 V, I = - 3.0 A 0.040 0.048 GS D V = - 2.5 V, I = - 1.0 A 0.048 0.059 GS D a R V = - 1.8 V, I = - 1.0 A 0.060 0.073 Drain-Source On-State Resistance DS(on) GS D V = - 1.5 V, I = - 0.5 A 0.070 0.097 GS D V = - 1.2 V, I = - 0.5 A 0.110 0.190 GS D a g V = - 4 V, I = - 3.0 A 12 S Forward Transconductance fs DS D b Dynamic Q 10.5 16 g Gate-Source Charge Q V = - 4 V, V = - 4.5 V, I = - 7.4 A 1.5 nC gs DS GS D Q Gate-Drain Charge 3.3 gd R Gate Resistance f = 1 MHz 80 400 800 g t Turn-On Delay Time 90 180 d(on) t Rise Time V = - 4 V, R = 0.7 170 340 r DD L ns I - 6 A, V = - 4.5 V, R = 1 t Turn-Off Delay Time D GEN g 690 1380 d(off) Fall Time t 630 1260 f Drain-Source Body Diode Characteristics I T = 25 C Continuous Source-Drain Diode Current - 2.0 S C A Pulse Diode Forward Current I - 8 SM V I = - 2 A, V = 0 V Body Diode Voltage - 0.8 - 1.2 V SD S GS Body Diode Reverse Recovery Time t 30 60 ns rr Q Body Diode Reverse Recovery Charge 12 25 nC rr I = - 2 A, dI/dt = 100 A/s, T = 25 C F J Reverse Recovery Fall Time t 12 a ns t Reverse Recovery Rise Time 18 b Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 67491 2 S11-0610-Rev. A, 04-Apr-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000