X-On Electronics has gained recognition as a prominent supplier of SI1539DDL-T1-GE3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SI1539DDL-T1-GE3 MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SI1539DDL-T1-GE3 Vishay

SI1539DDL-T1-GE3 electronic component of Vishay
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Part No.SI1539DDL-T1-GE3
Manufacturer: Vishay
Category: MOSFETs
Description: MOSFET N&P-Chnl 30V (D-S)
Datasheet: SI1539DDL-T1-GE3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 1
Multiples : 1
1 : USD 1.7058
10 : USD 0.9686
25 : USD 0.4636
50 : USD 0.4429
100 : USD 0.2561
250 : USD 0.2352
500 : USD 0.1816
1000 : USD 0.138
3000 : USD 0.1193
6000 : USD 0.1067
15000 : USD 0.097
30000 : USD 0.094
75000 : USD 0.091
N/A

Obsolete
0
MOQ : 1
Multiples : 1
1 : USD 1.2734
10 : USD 0.7407
100 : USD 0.2079
500 : USD 0.1684
1000 : USD 0.1289
3000 : USD 0.1143
6000 : USD 0.1066
9000 : USD 0.1026
24000 : USD 0.0988
N/A

Obsolete
   
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We are delighted to provide the SI1539DDL-T1-GE3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SI1539DDL-T1-GE3 and other electronic components in the MOSFETs category and beyond.

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Si1539DDL www.vishay.com Vishay Siliconix N- and P-Channel 30 V (D-S) MOSFET FEATURES SOT-363 SC-70 Dual (6 leads) TrenchFET power MOSFET S 2 4 100 % R tested g G 2 5 Material categorization: D 1 6 for definitions of compliance please see www.vishay.com/doc 99912 3 APPLICATIONS D 2 2 DC/DC converter G 1 1 Load switch S 1 Top View D S 1 2 Marking code: RI PRODUCT SUMMARY N-CHANNEL P-CHANNEL G 2 V (V) 30 -30 DS G 1 R () at V = 10 V 0.388 1.070 DS(on) GS R () at V = 4.5 V 0.525 2.590 DS(on) GS Q typ. (nC) 0.55 0.8 g a I (A) 0.7 -0.46 S D D 1 2 Configuration Dual N-Channel MOSFET P-Channel MOSFET ORDERING INFORMATION Package SOT-363 Lead (Pb)-free and halogen-free Si1539DDL-T1-GE3 ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) A PARAMETER SYMBOL N-CHANNELP-CHANNELUNIT Drain-source voltage V 30 -30 DS V Gate-source voltage V 20 20 GS T = 25 C 0.7 -0.46 C T = 70 C 0.6 -0.36 C Continuous drain current (T = 150 C) I J D b, c b, c T = 25 C 0.7 -0.42 A b, c b, c T = 70 C 0.5 -0.33 A A T = 25 C 0.3 -0.3 C Source-drain current diode current I S b, c b, c T = 25 C 0.2 -0.2 A Pulsed drain current (t = 100 s) I 2-1 DM T = 25 C 0.34 0.34 C T = 70 C 0.22 0.22 C Maximum power dissipation P W D b, c b, c T = 25 C 0.29 0.29 A b, c b, c T = 70 C 0.18 0.18 A Operating junction and storage temperature range T , T -55 to +150 C J stg THERMAL RESISTANCE RATINGS N-CHANNEL P-CHANNEL PARAMETER SYMBOL UNIT TYP. MAX. TYP. MAX. b, d Maximum junction-to-ambient t 10 s R 365 438 365 438 thJA C/W Maximum junction-to-foot (drain) Steady state R 308 370 308 370 thJF Notes a. Based on T = 25 C C b. Surface mounted on 1 x 1 FR4 board c. t = 10 s d. Maximum under steady state conditions is 486 C/W (N-Channel) and 486 C/W (P-Channel) S17-1009-Rev. B, 03-Jul-17 Document Number: 62999 1 For technical questions, contact: pmostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 Si1539DDL www.vishay.com Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) J a PARAMETER SYMBOL TEST CONDITIONS MIN.TYP. MAX. UNIT Static V = 0 V, I = 250 A N-Ch 30 - - GS D Drain-source breakdown voltage V V DS V = 0 V, I = -250 A P-Ch -30 - - GS D I = 250 A N-Ch - 30 - D V temperature coefficient V /T DS DS J I = -250 A P-Ch - -25 - D mV/C I = 250 A N-Ch - -3.6 - D V temperature coefficient V /T GS(th) GS(th) J I = -250 A P-Ch - 3.1 - D V = V , I = 250 A N-Ch 1.2 - 2.5 DS GS D Gate-source threshold voltage V V GS(th) V = V , I = -250 A P-Ch -1.5 - -3 DS GS D N-Ch - - 100 Gate-body leakage I V = 0 V, V = 20 V nA GSS DS GS P-Ch - - 100 V = 30 V, V = 0 V N-Ch - - 1 DS GS V = -30 V, V = 0 V P-Ch - - -1 DS GS Zero gate voltage drain current I A DSS V = 30 V, V = 0 V, T = 55 C N-Ch - - 10 DS GS J V = -30 V, V = 0 V, T = 55 C P-Ch - - -10 DS GS J V = 5 V, V = 10 V N-Ch 2 - - DS GS b On-state drain current I A D(on) V = -5 V, V = -10 V P-Ch -1 - - DS GS V = 10 V, I = 0.6 A N-Ch - 0.323 0.388 GS D V = -10 V, I = -0.4 A P-Ch - 0.890 1.070 GS D b Drain-source on-state resistance R V = 4.5 V, I = 0.1A N-Ch - 0.437 0.525 DS(on) GS D V = -5 V, I = -0.1 A - 1.850 2.590 GS D P-Ch V = -4.35 V, I = -0.1 A - 2.800 - GS D V = 15 V, I = 0.6 A N-Ch - 1.2 - DS D b Forward transconductance g S fs V = -15 V, I = -0.4 A P-Ch - 0.6 - DS D a Dynamic N-Ch - 28 - Input capacitance C iss P-Ch - 21 - N-Channel V = 15 V, V = 0 V, f = 1 MHz DS GS N-Ch - 10 - Output capacitance C pF oss P-Ch - 10 - P-Channel V = -15 V, V = 0 V, f = 1 MHz DS GS N-Ch - 5 - Reverse transfer capacitance C rss P-Ch - 6 - V = 15 V, V = 10 V, I = 0.6 A N-Ch - 1 1.5 DS GS D V = -15 V, V = -10 V, I = -0.4 A P-Ch - 1.5 3 DS GS D Total gate charge Q g N-Ch - 0.55 1.1 P-Ch - 0.8 1.2 N-Channel nC V = 15 V, V = 4.5 V I = 0.6 A DS GS D N-Ch - 0.2 - Gate-source charge Q gs P-Ch - 0.4 - P-Channel V = -15 V, V = -4.5 V, I = -0.4 A DS GS D N-Ch - 0.2 - Gate-drain charge Q gd P-Ch - 0.35 - N-Ch 0.7 3.7 7.4 Gate resistance R f = 1 MHz g P-Ch 0.3 15 30 S17-1009-Rev. B, 03-Jul-17 Document Number: 62999 2 For technical questions, contact: pmostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000

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8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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