New Product SiZ700DT Vishay Siliconix N-Channel 20-V (D-S) MOSFETs FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 V (V) R ()I (A) Q (Typ.) DS DS(on) D g Definition a TrenchFET Power MOSFETs 0.0086 at V = 10 V GS 16 Channel-1 20 9.5 nC 100 % R Tested g a 0.0108 at V = 4.5 V GS 16 Compliant to RoHS Directive 2002/95/EC a 0.0058 at V = 10 V GS 16 Channel-2 20 27 nC a APPLICATIONS 0.0066 at V = 4.5 V GS 16 Notebook System Power POL PowerPAIR 6 x 3.7 D 1 3.73 mm Pin 1 G 1 1 D 1 2 D 1 G 1 D 1 3 N-Channel 1 MOSFET S1/D2 S /D G 1 2 2 S (Pin 7) 2 6 6 mm S 2 5 G 2 4 N-Channel 2 MOSFET Ordering Information: S 2 SiZ700DT-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) A Parameter Symbol Channel-1Channel-2Unit V 20 20 Drain-Source Voltage DS V V 16 Gate-Source Voltage GS a a T = 25 C 16 16 C a a T = 70 C 16 16 C I Continuous Drain Current (T = 150 C) D J b, c b, c T = 25 C 13.1 17.3 A b, c b, c T = 70 C 10.5 13.9 A A I Pulsed Drain Current 60 60 DM a T = 25 C 14.7 16 C I Source Drain Current Diode Current S b, c b, c T = 25 C 1.96 2.3 A T = 25 C 2.36 2.8 C T = 70 C 1.5 1.78 C Maximum Power Dissipation P W D b, c b, c T = 25 C 1.47 1.4 A b, c b, c T = 70 C 0.9 0.94 A T , T Operating Junction and Storage Temperature Range J stg - 55 to 150 C d, e Soldering Recommendations (Peak Temperature) 260 THERMAL RESISTANCE RATINGS Channel-1 Channel-2 Parameter Symbol Typ. Max. Typ. Max. Unit b, f t 10 s R 39 53 33 45 Maximum Junction-to-Ambient thJA C/W R Maximum Junction-to-Case (Drain) Steady State 5.7 7.1 3.7 4.6 thJC Notes: a. Package limited. b. Surface mounted on 1 x 1 FR4 board. c. t = 10 s. d. See solder profile (www.vishay.com/doc 73257). The PowerPAIR is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under steady state conditions is 90 C/W for channel-1 and 85 C/W for channel-2. Document Number: 69090 www.vishay.com S11-2379-Rev. B, 28-Nov-11 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000New Product SiZ700DT Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) J Parameter Symbol Test Conditions Min. Typ.Max.Unit Static V = 0 V, I = 250 A Ch-1 20 GS D V Drain-Source Breakdown Voltage V DS V = 0 V, I = 250 A Ch-2 20 GS D I = 250 A Ch-1 21 D V Temperature Coefficient V /T DS DS J I = 250 A Ch-2 21 D mV/C I = 250 A Ch-1 - 5.8 D V Temperature Coefficient V /T GS(th) GS(th) J I = 250 A Ch-2 - 5.8 D V = V , I = 250 A Ch-1 0.8 2.2 DS GS D V Gate Threshold Voltage V GS(th) V = V , I = 250 A Ch-2 0.8 2.2 DS GS D Ch-1 100 I V = 0 V, V = 16 V Gate-Body Leakage nA GSS DS GS Ch-2 100 V = 20 V, V = 0 V Ch-1 1 DS GS V = 20 V, V = 0 V Ch-2 1 DS GS I Zero Gate Voltage Drain Current A DSS V = 20 V, V = 0 V, T = 55 C Ch-1 10 DS GS J V = 20 V, V = 0 V, T = 55 C Ch-2 10 DS GS J V 5 V, V = 10 V Ch-1 30 DS GS b I A On-State Drain Current D(on) V 5 V, V = 10 V Ch-2 30 DS GS V = 10 V, I = 15 A Ch-1 0.007 0.0086 GS D V = 10 V, I = 20 A Ch-2 0.0047 0.0058 GS D b R Drain-Source On-State Resistance DS(on) V = 4.5 V, I = 10 A Ch-1 0.0088 0.0108 GS D V = 4.5 V, I = 15 A Ch-2 0.0054 0.0066 GS D V = 10 V, I = 15 A Ch-1 60 DS D b g S Forward Transconductance fs V = 10 V, I = 20 A Ch-2 100 DS D a Dynamic Ch-1 1300 C Input Capacitance iss Channel-1 Ch-2 3860 V = 10 V, V = 0 V, f = 1 MHz DS GS Ch-1 290 C Output Capacitance pF oss Ch-2 760 Channel-2 Ch-1 132 V = 10 V, V = 0 V, f = 1 MHz DS GS C Reverse Transfer Capacitance rss Ch-2 350 V = 10 V, V = 10 V, I = 15 A Ch-1 20 35 DS GS D V = 10 V, V = 10 V, I = 20 A Ch-2 55 85 DS GS D Total Gate Charge Q g Ch-1 9.5 15 Channel-1 Ch-2 27 45 nC V = 10 V, V = 4.5 V, I = 15 A DS GS D Ch-1 3.2 Q Gate-Source Charge gs Ch-2 9.2 Channel-2 Ch-1 2.4 V = 10 V, V = 4.5 V, I = 20 A DS GS D Q Gate-Drain Charge gd Ch-2 7.1 Ch-1 0.3 1.3 2.6 R Gate Resistance f = 1 MHz g Ch-2 0.2 1 2 Notes: a. Guaranteed by design, not subject to production testing. b. Pulse test pulse width 300 s, duty cycle 2 %. www.vishay.com Document Number: 69090 2 S11-2379-Rev. B, 28-Nov-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000