X-On Electronics has gained recognition as a prominent supplier of SI1403BDL-T1-E3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SI1403BDL-T1-E3 MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SI1403BDL-T1-E3 Vishay

Hot SI1403BDL-T1-E3 electronic component of Vishay
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Part No.SI1403BDL-T1-E3
Manufacturer: Vishay
Category: MOSFETs
Description: MOSFET -20V Vds 12V Vgs SC-70
Datasheet: SI1403BDL-T1-E3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.0265 ea
Line Total: USD 0.03 
Availability - 17
Ship by Mon. 11 Nov to Fri. 15 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
17
Ship by Mon. 11 Nov to Fri. 15 Nov
MOQ : 1
Multiples : 1
1 : USD 0.0265
10 : USD 0.0156

40333
Ship by Fri. 15 Nov to Tue. 19 Nov
MOQ : 1
Multiples : 1
1 : USD 0.4956
10 : USD 0.3887
100 : USD 0.2703
500 : USD 0.2185
1000 : USD 0.2024
3000 : USD 0.1725
9000 : USD 0.1679
24000 : USD 0.1667
45000 : USD 0.1644

   
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Continuous Drain Current
Drain-Source Breakdown Voltage
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We are delighted to provide the SI1403BDL-T1-E3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SI1403BDL-T1-E3 and other electronic components in the MOSFETs category and beyond.

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Si1403BDL New Product Vishay Siliconix P-Channel 2.5-V (G-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET V (V) r ( ) I (A) Q (Typ) DS DS(on) D g 0.150 V = 4.5 V GS 1.5 20 0.175 V = 3.6 V 1.4 2.9 GS 0.265 V = 2.5 V 1.2 GS SOT-363 SC-70 (6-LEADS) D 1 6 D Marking Code 5 D 2 D OD XX Lot Traceability and Date Code G 3 4 S Part Code Top View Ordering Information: Si1403BDL-T1E3 ABSOLUTE MAXIMUM RATINGS (T = 25 C UNLESS OTHERWISE NOTED) A Parameter Symbol 5 secs Steady State Unit Drain-Source Voltage V 20 DS VV Gate-Source Voltage V 12 GS T = 25 C 1.4 1.5 A aa Continuous Drain CurrentContinuous Drain Current (T(T == 150 150 C)C) II JJ DD T = 85 C 1.2 1.0 A AA Pulsed Drain Current I 5 DM a Continuous Diode Current (Diode Conduction) I 0.8 0.8 S T = 25 C 0.625 0.568 A aa Maximum Power DissipationMaximum Power Dissipation PP WW DD T = 85 C 0.400 0.295 A Operating Junction and Storage Temperature Range T , T 55 to 150 C J stg THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit t 5 sec 165 200 aa Maximum Junction-to-AmbientMi J ti t A bi t RR thJA Steady State 180 220 C/WC/W Maximum Junction-to-Foot (Drain) Steady State R 105 130 thJF Notes a. Surface Mounted on 1 x 1 FR4 Board. Document Number: 73253 www.vishay.com S-50137Rev. A, 24-Jan-05 1 YYSi1403BDL New Product Vishay Siliconix SPECIFICATIONS (T = 25 C UNLESS OTHERWISE NOTED) J Parameter Symbol Test Condition Min Typ Max Unit Static Gate Threshold Voltage V V = V , I = 250 A 0.6 1.3 V GS(th) DS GS D Gate-Body Leakage I V = 0 V, V = 12 V 100 nA GSS DS GS V = 20 V, V = 0 V 1 DS GS Zero Gate VZero Gate Voltage Drain Currentoltage Drain Current II AA DSDSSS V = 20 V, V = 0 V, T = 85 C 5 DS GS J a On-State Drain Current I V = 5 V, V = 4.5 V 2 A D(on) DS GS V = 4.5 V, I = 1.5 A 0.120 0.150 GS D a V = 3.6 V, I = 1.4 A 0.140 0.175 DrainDrain-Source On-State ResistanceSource On State Resistance rr GS D DSDS((on)on) V = 2.5 V, I = 0.8 A 0.220 0.265 GS D a Forward Transconductance g 3.4 S fs V = 10 V, I = 1.5 A DS D a Diode Forward Voltage V I = 0.8 A, V = 0 V 0.8 1.1 V SD S GS b Dynamic Total Gate Charge Q 2.9 4.5 g Gate-Source Charge Q V = 10 V,, V = 4.5 V,, I = 1.5 A 0.65 nC gs DSDS GSGS DD Gate-Drain Charge Q 1.0 gd Gate Resistance R f = 1.0 MHz 9 g Turn-On Delay Time t 13 20 d(on) Rise Time t 30 45 r VV = = 10 V10 V,, R R = 10 = 10 DDDD LL I 1 A, V = 4.5 V, R = 6 Turn-Off Delay Time t D GEN gg 28 42 d(off) nsns Fall Time t 13 20 f Source-Drain Reverse Recovery Time t 12 25 rr II = = 0.8 A, di/dt = 100 A/0 8 A di/dt = 100 A/ ss FF Body Diode Reverse Recovery Charge Q 4 8 nC rr Notes a. Pulse test pulse width 300 s, duty cycle 2%. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS (25 C UNLESS NOTED) Output Characteristics Transfer Characteristics 4.0 4.0 T = 55 C C V = 5 thru 2.5 V GS 25 C 3.2 3.2 125 C 2.4 2.4 2 V 1.6 1.6 0.8 0.8 1.5 V 1, 0.5 V 0.0 0.0 0.0 0.8 1.6 2.4 3.2 4.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 V Drain-to-Source Voltage (V) V Gate-to-Source Voltage (V) DS GS Document Number: 73253 www.vishay.com S-50137Rev. A, 24-Jan-05 2 I Drain Current (A) D I Drain Current (A) D

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8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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