Si1403BDL New Product Vishay Siliconix P-Channel 2.5-V (G-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET V (V) r ( ) I (A) Q (Typ) DS DS(on) D g 0.150 V = 4.5 V GS 1.5 20 0.175 V = 3.6 V 1.4 2.9 GS 0.265 V = 2.5 V 1.2 GS SOT-363 SC-70 (6-LEADS) D 1 6 D Marking Code 5 D 2 D OD XX Lot Traceability and Date Code G 3 4 S Part Code Top View Ordering Information: Si1403BDL-T1E3 ABSOLUTE MAXIMUM RATINGS (T = 25 C UNLESS OTHERWISE NOTED) A Parameter Symbol 5 secs Steady State Unit Drain-Source Voltage V 20 DS VV Gate-Source Voltage V 12 GS T = 25 C 1.4 1.5 A aa Continuous Drain CurrentContinuous Drain Current (T(T == 150 150 C)C) II JJ DD T = 85 C 1.2 1.0 A AA Pulsed Drain Current I 5 DM a Continuous Diode Current (Diode Conduction) I 0.8 0.8 S T = 25 C 0.625 0.568 A aa Maximum Power DissipationMaximum Power Dissipation PP WW DD T = 85 C 0.400 0.295 A Operating Junction and Storage Temperature Range T , T 55 to 150 C J stg THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit t 5 sec 165 200 aa Maximum Junction-to-AmbientMi J ti t A bi t RR thJA Steady State 180 220 C/WC/W Maximum Junction-to-Foot (Drain) Steady State R 105 130 thJF Notes a. Surface Mounted on 1 x 1 FR4 Board. Document Number: 73253 www.vishay.com S-50137Rev. A, 24-Jan-05 1 YYSi1403BDL New Product Vishay Siliconix SPECIFICATIONS (T = 25 C UNLESS OTHERWISE NOTED) J Parameter Symbol Test Condition Min Typ Max Unit Static Gate Threshold Voltage V V = V , I = 250 A 0.6 1.3 V GS(th) DS GS D Gate-Body Leakage I V = 0 V, V = 12 V 100 nA GSS DS GS V = 20 V, V = 0 V 1 DS GS Zero Gate VZero Gate Voltage Drain Currentoltage Drain Current II AA DSDSSS V = 20 V, V = 0 V, T = 85 C 5 DS GS J a On-State Drain Current I V = 5 V, V = 4.5 V 2 A D(on) DS GS V = 4.5 V, I = 1.5 A 0.120 0.150 GS D a V = 3.6 V, I = 1.4 A 0.140 0.175 DrainDrain-Source On-State ResistanceSource On State Resistance rr GS D DSDS((on)on) V = 2.5 V, I = 0.8 A 0.220 0.265 GS D a Forward Transconductance g 3.4 S fs V = 10 V, I = 1.5 A DS D a Diode Forward Voltage V I = 0.8 A, V = 0 V 0.8 1.1 V SD S GS b Dynamic Total Gate Charge Q 2.9 4.5 g Gate-Source Charge Q V = 10 V,, V = 4.5 V,, I = 1.5 A 0.65 nC gs DSDS GSGS DD Gate-Drain Charge Q 1.0 gd Gate Resistance R f = 1.0 MHz 9 g Turn-On Delay Time t 13 20 d(on) Rise Time t 30 45 r VV = = 10 V10 V,, R R = 10 = 10 DDDD LL I 1 A, V = 4.5 V, R = 6 Turn-Off Delay Time t D GEN gg 28 42 d(off) nsns Fall Time t 13 20 f Source-Drain Reverse Recovery Time t 12 25 rr II = = 0.8 A, di/dt = 100 A/0 8 A di/dt = 100 A/ ss FF Body Diode Reverse Recovery Charge Q 4 8 nC rr Notes a. Pulse test pulse width 300 s, duty cycle 2%. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS (25 C UNLESS NOTED) Output Characteristics Transfer Characteristics 4.0 4.0 T = 55 C C V = 5 thru 2.5 V GS 25 C 3.2 3.2 125 C 2.4 2.4 2 V 1.6 1.6 0.8 0.8 1.5 V 1, 0.5 V 0.0 0.0 0.0 0.8 1.6 2.4 3.2 4.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 V Drain-to-Source Voltage (V) V Gate-to-Source Voltage (V) DS GS Document Number: 73253 www.vishay.com S-50137Rev. A, 24-Jan-05 2 I Drain Current (A) D I Drain Current (A) D