X-On Electronics has gained recognition as a prominent supplier of SI1414DH-T1-GE3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SI1414DH-T1-GE3 MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SI1414DH-T1-GE3 Vishay

SI1414DH-T1-GE3 electronic component of Vishay
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Part No.SI1414DH-T1-GE3
Manufacturer: Vishay
Category: MOSFETs
Description: Vishay Semiconductors MOSFET 30 Volts 4 Amps 2.8 Watts
Datasheet: SI1414DH-T1-GE3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 3000
Multiples : 3000
3000 : USD 0.1704
6000 : USD 0.1607
9000 : USD 0.1595
N/A

Obsolete
0
MOQ : 1
Multiples : 1
1 : USD 0.3976
30 : USD 0.357
75 : USD 0.3128
150 : USD 0.265
375 : USD 0.228
750 : USD 0.2024
1500 : USD 0.1822
N/A

Obsolete
0
MOQ : 3000
Multiples : 3000
3000 : USD 0.1251
N/A

Obsolete
0
MOQ : 1
Multiples : 1
1 : USD 1.2127
10 : USD 0.8285
100 : USD 0.2689
500 : USD 0.2148
1000 : USD 0.1625
3000 : USD 0.1563
6000 : USD 0.1462
9000 : USD 0.1411
24000 : USD 0.1398
N/A

Obsolete
0
MOQ : 68
Multiples : 1
68 : USD 0.2656
N/A

Obsolete
   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs - Gate-Source Breakdown Voltage
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Qg - Gate Charge
Configuration
Brand
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We are delighted to provide the SI1414DH-T1-GE3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SI1414DH-T1-GE3 and other electronic components in the MOSFETs category and beyond.

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Si1414DH www.vishay.com Vishay Siliconix N-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET power MOSFET a V (V) R ()I (A) Q (TYP.) DS DS(on) D g 100 % R tested g 0.046 at V = 4.5 V 4 GS Material categorization: 30 0.050 at V = 2.5 V 4 5.7 nC GS for definitions of compliance please see 0.057 at V = 1.8 V 4 GS www.vishay.com/doc 99912 SOT-363 APPLICATIONS SC-70 Single (6 leads) D S DC/DC converters 4 D Boost converters 5 D Load switches 6 G 3 G 2 D 1 S D Top View N-Channel MOSFET Marking Code: AP Ordering Information: Si1414DH-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) A PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V 30 DS V Gate-Source Voltage V 8 GS a T = 25 C 4 F a T = 70 C 4 F Continuous Drain Current (T = 150 C) I J D a, b, c T = 25 C 4 A a, b, c T = 70 C 3.7 A A Pulsed Drain Current I 20 DM T = 25 C 2.3 F Continuous Source-Drain Diode Current I S b, c T = 25 C 1.3 A T = 25 C 2.8 F T = 70 C 1.8 F Maximum Power Dissipation P W D b, c T = 25 C 1.56 A b, c T = 70 C 1 A Operating Junction and Storage Temperature Range T , T -55 to 150 J stg C d, e Soldering Recommendations (Peak Temperature) 260 THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYPICALMAXIMUMUNIT b, d Maximum Junction-to-Ambient t 5 s R 60 80 thJA C/W Maximum Junction-to-Foot (Drain) Steady State R 34 45 thJF Notes a. Package limited. b. Surface mounted on 1 x 1 FR4 board. c. t = 5 s. d. Maximum under steady state conditions is 125 C/W. S14-1224-Rev. C, 16-Jun-14 Document Number: 67073 1 For technical questions, contact: pmostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000Si1414DH www.vishay.com Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP.MAX.UNIT Static Drain-Source Breakdown Voltage V V = 0 V, I = 250 A 30 - - V DS GS D V Temperature Coefficient V /T -31- DS DS J I = 250 A mV/C D V Temperature Coefficient V /T --2.7 - GS(th) GS(th) J Gate-Source Threshold Voltage V V = V , I = 250 A 0.4 - 1 V GS(th) DS GS D Gate-Source Leakage I V = 0 V, V = 8 V - - 100 nA GSS DS GS V = 30 V, V = 0 V - - 1 DS GS Zero Gate Voltage Drain Current I A DSS V = 30 V, V = 0 V, T = 55 C - - 10 DS GS J a On-State Drain Current I V 5 V, V = 10 V 10 - - A D(on) DS GS V = 4.5 V, I = 4 A - 0.037 0.046 GS D a Drain-Source On-State Resistance R V = 2.5 V, I = 2 A - 0.041 0.050 DS(on) GS D V = 1.8 V, I = 1 A - 0.046 0.057 GS D a Forward Transconductance g V = 15 V, I = 4 A - 30 - S fs DS D b Dynamic Input Capacitance C - 560 - iss Output Capacitance C -6V = 15 V, V = 0 V, f = 1 MHz0- pF oss DS GS Reverse Transfer Capacitance C -27- rss V = 15 V, V = 8 V, I = 3.4 A - 10 15 DS GS D Total Gate Charge Q g -5.7 8.6 nC Gate-Source Charge Q -0V = 15 V, V = 4.5 V, I = 3.4 A.85- gs DS GS D Gate-Drain Charge Q -0.75 - gd Gate Resistance R f = 1 MHz 0.6 3 6 g Turn-On Delay Time t -6 12 d(on) Rise Time t -1020 r V = 15 V, R = 4.3 DD L I 3.5 A, V = 4.5 V, R = 1 Turn-Off Delay Time t -2D GEN g 040 d(off) Fall Time t -10 20 f ns Turn-On Delay Time t -5 10 d(on) Rise Time t -1020 r V = 15 V, R = 4.3 DD L I 3.5 A, V = 8 V, R = 1 Turn-Off Delay Time t -1D GEN g 730 d(off) Fall Time t -10 20 f Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current I T = 25 C - - 1.5 S C A Pulse Diode Forward Current I -- 20 SM Body Diode Voltage V I = 3.5 A, V = 0 V - 0.8 1.2 V SD S GS Body Diode Reverse Recovery Time t -15 30 ns rr Body Diode Reverse Recovery Charge Q - 6 12 nC rr I = 3.5 A, dI/dt = 100 A/s, T = 25 C F J Reverse Recovery Fall Time t -8- a ns Reverse Recovery Rise Time t -7- b Notes a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S14-1224-Rev. C, 16-Jun-14 Document Number: 67073 2 For technical questions, contact: pmostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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