New Product Si1422DH Vishay Siliconix N-Channel 12 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 a V (V) R ()I (A) Q (Typ.) DS DS(on) D g Definition 0.026 at V = 4.5 V 4 TrenchFET Power MOSFET GS 100 % R Tested 12 0.030 at V = 2.5 V 4 7.5 nC g GS Compliant to RoHS Directive 2002/95/EC 0.036 at V = 1.8 V 4 GS APPLICATIONS Load Switch, PA Switch and Battery Switch for Portable Devices SOT-363 High Frequency dc-to-dc Converters SC-70 (6-LEADS) Low On-Resistance Switching D D 1 6 D Marking Code 5 D 2 D AO XX G Lot Traceability G 3 4 S and Date Code Part Code Top View S Ordering Information: Si1422DH-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted A Parameter Symbol LimitUnit Drain-Source Voltage V 12 DS V V Gate-Source Voltage 8 GS a T = 25 C 4 F a T = 70 C 4 F Continuous Drain Current (T = 150 C) I J D b, c T = 25 C 4 A b, c T = 70 C 4 A A I Pulsed Drain Current 20 DM a T = 25 C 2.3 F Continuous Source-Drain Diode Current I S b, c 1.3 T = 25 C A T = 25 C 2.8 F T = 70 C 1.8 F Maximum Power Dissipation P W D b, c 1.56 T = 25 C A b, c T = 70 C 1.0 A Operating Junction and Storage Temperature Range T , T - 55 to 150 J stg C Soldering Recommendations (Peak Temperature) 260 THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit b, d Maximum Junction-to-Ambient t 5 s R 60 80 thJA C/W Maximum Junction-to-Foot (Drain) Steady State R 34 45 thJF Notes: a. T = 25 C, package limited. F b. Surface mounted on 1 x 1 FR4 board. c. t = 5 s. d. Maximum under steady state conditions is 125 C/W. Document Number: 66701 www.vishay.com S10-1287-Rev. A, 31-May-10 1 YYNew Product Si1422DH Vishay Siliconix SPECIFICATIONS T = 25 C, unless otherwise noted J Parameter Symbol Test Conditions Min.Typ.Max.Unit Static V V = 0 V, I = 250 A Drain-Source Breakdown Voltage 12 V DS GS D V Temperature Coefficient V /T 11 DS DS J I = 250 A mV/C D V Temperature Coefficient V /T - 2.7 GS(th) GS(th) J V V = V , I = 250 A Gate-Source Threshold Voltage 0.4 1.0 V GS(th) DS GS D I V = 0 V, V = 8 V Gate-Source Leakage 100 nA GSS DS GS V = 12 V, V = 0 V 1 DS GS Zero Gate Voltage Drain Current I A DSS V = 12 V, V = 0 V, T = 55 C 10 DS GS J a I V 5 V, V = 4.5 V 15 A On-State Drain Current D(on) DS GS V = 4.5 V, I = 5.1 A 0.021 0.026 GS D a R V = 2.5 V, I = 4.7 A 0.024 0.030 Drain-Source On-State Resistance DS(on) GS D V = 1.8 V, I = 2.5 A 0.029 0.036 GS D a g V = 10 V, I = 5.1 A 30 S Forward Transconductance fs DS D b Dynamic Input Capacitance C 725 iss C V = 6 V, V = 0 V, f = 1 MHz Output Capacitance 195 pF oss DS GS C Reverse Transfer Capacitance 90 rss V = 6 V, V = 8 V, I = 9 A 13.1 20 DS GS D Q Total Gate Charge g 7.5 12 nC Q Gate-Source Charge V = 6 V, V = 4.5 V, I = 9 A 1.1 gs DS GS D Q Gate-Drain Charge 0.8 gd R Gate Resistance f = 1 MHz 0.5 2.5 5 g t Turn-On Delay Time 10 15 d(on) t Rise Time V = 6 V, R = 0.83 10 15 r DD L I 7.2 A, V = 4.5 V, R = 1 Turn-Off Delay Time t 20 30 D GEN g d(off) t Fall Time 10 15 f ns Turn-On Delay Time t 510 d(on) t Rise Time V = 6 V, R = 0.83 10 15 r DD L I 7.2 A, V = 8 V, R = 1 Turn-Off Delay Time t 20 30 D GEN g d(off) t Fall Time 10 15 f Drain-Source Body Diode Characteristics T = 25 C Continuous Source-Drain Diode Current I 4 S C A I Pulse Diode Forward Current 20 SM V I = 7.2 A, V = 0 V Body Diode Voltage 0.8 1.2 V SD S GS t Body Diode Reverse Recovery Time 15 30 ns rr Q Body Diode Reverse Recovery Charge 48 nC rr I = 7.2 A, dI/dt = 100 A/s, T = 25 C F J t Reverse Recovery Fall Time 8 a ns t Reverse Recovery Rise Time 7 b Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 66701 2 S10-1287-Rev. A, 31-May-10