New Product Si1443EDH Vishay Siliconix P-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET V (V) R ( )I (A) Q (Typ.) Typical ESD Performance 1500 V HBM DS DS(on) D g a 100 % R Tested 0.054 at V = - 10 V - 4 g GS Material categorization: a - 30 0.062 at V = - 4.5 V - 4 8.6 nC GS For definitions of compliance please see 0.085 at V = - 2.5 V - 3.4 GS www.vishay.com/doc 99912 APPLICATIONS Load Switch for Portable Devices - Cellular Phone SOT -363 - DSC SC-70 (6-LEADS) - Portable Game Console - MP3 D 1 6 D - GPS Soft Turn-on Load Switch S 5 D 2 D Marking Code G 3 4 S BT X G Lot Traceability R and Date Code Top View Ordering Information: Part Code Si1443EDH-T1-GE3 (Lead (Pb)-free and Halogen-free) D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) A Parameter Symbol LimitUnit V - 30 Drain-Source Voltage DS V Gate-Source Voltage V 12 GS a T = 25 C - 4 C a T = 70 C - 4 C Continuous Drain Current (T = 150 C) I J D a, b, c T = 25 C - 4 A b, c T = 70 C - 3.4 A A Pulsed Drain Current (t = 300 s) I - 15 DM - 2.3 T = 25 C C Continuous Source-Drain Diode Current I S b, c T = 25 C - 1.3 A T = 25 C 2.8 C T = 70 C 1.8 C Maximum Power Dissipation P W D b, c T = 25 C 1.6 A b, c T = 70 C 1 A Operating Junction and Storage Temperature Range T , T - 55 to 150 J stg C Soldering Recommendations (Peak Temperature) 260 THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit b, d R Maximum Junction-to-Ambient t 5 s 60 80 thJA C/W Maximum Junction-to-Foot (Drain) Steady State R 34 45 thJF Notes: a. Package limited. b. Surface mounted on 1 x 1 FR4 board. c. t = 5 s. d. Maximum under steady state conditions is 125 C/W. Document Number: 67849 For technical support, please contact: pmostechsupport vishay.com www.vishay.com S12-0980-Rev. B, 30-Apr-12 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 YYNew Product Si1443EDH Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) J Parameter Symbol Test Conditions Min.Typ.Max.Unit Static Drain-Source Breakdown Voltage V V = 0 V, I = - 250 A - 30 V DS GS D V Temperature Coefficient V /T - 22 DS DS J I = - 250 A mV/C D V Temperature Coefficient V /T 2.6 GS(th) GS(th) J Gate-Source Threshold Voltage V V = V , I = - 250 A - 0.6 - 1.5 V GS(th) DS GS D V = 0 V, V = 12 V 20 DS GS Gate-Source Leakage I GSS = 0 V, V = 4.5 V 1 V DS GS A V = - 30 V, V = 0 V - 1 DS GS Zero Gate Voltage Drain Current I DSS V = - 30 V, V = 0 V, T = 55 C - 10 DS GS J a On-State Drain Current I V - 5 V, V = - 10 V - 15 A D(on) DS GS V = - 10 V, I = - 4.3 A 0.043 0.054 GS D a Drain-Source On-State Resistance R V = - 4.5 V, I = - 4 A 0.049 0.062 DS(on) GS D V = - 2.5 V, I = - 3.5 A 0.067 0.085 GS D a Forward Transconductance g V = - 15 V, I = - 4.3 A 14 S fs DS D b Dynamic V = - 15 V, V = - 10 V, I = - 4.3 A 18.5 28 DS GS D Total Gate Charge Q g 8.6 13 nC Gate-Source Charge Q V = - 15 V, V = - 4.5 V, I = - 4.3 A 1.7 gs DS GS D Gate-Drain Charge Q 2.5 gd Gate Resistance R f = 1 MHz 0.09 0.45 0.90 k g Turn-On Delay Time t 125 188 d(on) Rise Time t 220 330 V = - 15 V, R = 4.4 r DD L I - 3.4 A, V = - 4.5 V, R = 1 Turn-Off Delay Time t 1115D GEN g 1673 d(off) Fall Time t 435 653 f ns Turn-On Delay Time t 40 60 d(on) Rise Time t 64 98 r V = - 15 V, R = 4.4 DD L I - 3.4 A, V = - 10 V, R = 1 Turn-Off Delay Time t 1800D GEN g 2700 d(off) Fall Time t 420 630 f Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current I T = 25 C - 2.3 S C A Pulse Diode Forward Current I - 15 SM Body Diode Voltage V I = - 3.4 A, V = 0 V - 0.85 - 1.2 V SD S GS Body Diode Reverse Recovery Time t 14 21 ns rr Body Diode Reverse Recovery Charge Q 714 nC rr I = - 3.4 A, dI/dt = 100 A/s, T = 25 C F J 9 Reverse Recovery Fall Time t a ns Reverse Recovery Rise Time t 5 b Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com For technical support, please contact: pmostechsupport vishay.com Document Number: 67849 2 S12-0980-Rev. B, 30-Apr-12 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000