Si1473DH Vishay Siliconix P-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 c V (V) R () Q (Typ.) I (A) DS DS(on) g D Definition 0.100 at V = - 10 V - 2.7 GS TrenchFET Power MOSFET - 30 4.1 nC 0.145 at V = - 4.5 V - 2.7 GS Compliant to RoHS Directive 2002/95/EC APPLICATIONS SOT-363 Load Switch for Portable Devices SC-70 (6-LEADS) D 1 6 D Marking Code S BJ XX 5 D 2 D Lot Traceability and Date Code G Part G 3 4 S Code Top View D Ordering Information: Si1473DH-T1-E3 (Lead (Pb)-free) Si1473DH-T1-GE3 (Lead (Pb)-free and Halogen-free) P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted A Parameter Symbol LimitUnit V Drain-Source Voltage - 30 DS V V Gate-Source Voltage 20 GS c T = 25 C C -2.7 c T = 70 C C - 2.7 a, b I Continuous Drain Current (T = 150 C) D J a, b T = 25 C A - 2.8 a, b T = 70 C A - 2.3 A Pulsed Drain Current (10 s Pulse Width) I DM - 8 T = 25 C C - 2.3 a, b I Continuous Source-Drain Diode Current S a, b T = 25 C A - 1.25 T = 25 C 2.78 C T = 70 C 1.78 C a, b P W Maximum Power Dissipation D a, b T = 25 C A 1.5 a, b T = 70 C A 1 T , T Operating Junction and Storage Temperature Range - 55 to 150 J stg C c, d 260 Soldering Recommendations (Peak Temperature) THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit a, d t 5 s R 60 80 Maximum Junction-to-Ambient thJA C/W R Maximum Junction-to-Foot (Drain) Steady State 34 45 thJF Notes: a. Surface Mounted on 1 x 1 FR4 board. b. t = 5 s. c. Package limited. d. Maximum under Steady State conditions is 125 C/W. Document Number: 74438 www.vishay.com S10-0646-Rev. E, 22-Mar-10 1 YYSi1473DH Vishay Siliconix SPECIFICATIONS T = 25 C, unless otherwise noted J Parameter Symbol Test Conditions Min. Typ.Max.Unit Static V V = 0 V, I = - 250 A Drain-Source Breakdown Voltage - 30 V DS GS D V Temperature Coefficient V /T - 32 DS DS J I = - 250 A mV/C D V Temperature Coefficient V /T 4 GS(th) GS(th) J V V = V , I = - 250 A Gate-Source Threshold Voltage - 1 - 3 V GS(th) DS GS D I V = 0 V, V = 20 V Gate-Source Leakage - 100 nA GSS DS GS V = - 30 V, V = 0 V - 1 DS GS Zero Gate Voltage Drain Current I A DSS V = - 30 V, V = 0 V, T = 55 C - 10 DS GS J a I V 5 V, V = - 10 V - 3 A On-State Drain Current D(on) DS GS V = - 10 V, I = - 2.0 A 0.084 0.100 GS D a R Drain-Source On-State Resistance DS(on) V = - 4.5 V, I = - 1.6 A 0.120 0.145 GS D a g V = - 10 V, I = - 2.0 A 6S Forward Transconductance fs DS D b Dynamic C Input Capacitance 365 iss Output Capacitance C V = - 15 V, V = 0 V, f = 1 MHz 68 pF oss DS GS C Reverse Transfer Capacitance 51 rss Q Total Gate Charge 4.1 6.2 g Q V = - 15 V, V = - 4.5 V, I = - 2.5 A Gate-Source Charge 1.2 nC gs DS GS D Q Gate-Drain Charge 1.7 gd R Gate Resistance f = 1 MHz 9.2 g t Turn-On Delay Time 24 40 d(on) t Rise Time V = - 15 V, R = 7.5 60 100 r DD L I - 2 A, V = - 4.5 V, R = 1 t Turn-Off Delay Time D GEN g 25 40 d(off) Fall Time t 15 25 f ns t Turn-On Delay Time 48 d(on) Rise Time t 10 20 V = - 15 V, R = 7.5 r DD L I - 2 A, V = - 10 V, R = 1 t Turn-Off Delay Time D GEN g 15 25 d(off) Fall Time t 612 f Drain-Source Body Diode Characteristics I T = 25 C Continuous Source-Drain Diode Current - 1.6 S C A I Pulse Diode Forward Current - 6.5 SM V I = - 2 A, V = 0 V Body Diode Voltage - 0.85 - 1.2 V SD S GS t Body Diode Reverse Recovery Time 23 35 ns rr Q Body Diode Reverse Recovery Charge 15 23 nC rr I = - 2.0 A, dI/dt = 100 A/s, T = 25 C F J t Reverse Recovery Fall Time 9 a ns t Reverse Recovery Rise Time 14 b Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 74438 2 S10-0646-Rev. E, 22-Mar-10