Si3442CDV Vishay Siliconix N-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET a V (V) R ( ) Max. I (A) Q (Typ.) 100 % R and UIS Tested DS DS(on) D g g d Material categorization: 0.027 at V = 10 V 8 GS For definitions of compliance please see 20 0.030 at V = 4.5 V 7.5 4.3 nC GS www.vishay.com/doc 99912 0.049 at V = 2.5 V 6.1 GS APPLICATIONS TSOP-6 DC/DC Converters Top View Boost Converters Load Switch D 1 6 D D (1, 2, 5, 6) 3 mm D 5 D 2 Marking Code BE XXX Lot Traceability G S 3 4 and Date Code G (3) Part Code 2.85 mm (4) Ordering Information: S Si3442CDV-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) A Parameter Symbol Limit Unit V Drain-Source Voltage 20 DS V Gate-Source Voltage V 12 GS d T = 25 C 8 C T = 70 C 6.6 C Continuous Drain Current (T = 150 C) I J D a, b T = 25 C 6.5 A a, b T = 70 C 5.2 A A I Pulsed Drain Current (t = 300 s) 20 DM T = 25 C 2.2 C Continuous Source-Drain Diode Current I S a, b T = 25 C 1.4 A I Avalanche Current 8 AS L = 0.1 mH E mJ Single Avalanche Energy 3.2 AS T = 25 C 2.7 C T = 70 C 1.7 C Maximum Power Dissipation P W D a, b T = 25 C 1.7 A a, b T = 70 C 1.1 A T , T C Operating Junction and Storage Temperature Range - 55 to 150 J stg THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit a, c Maximum Junction-to-Ambient t 5 s R 61 74 thJA C/W Maximum Junction-to-Foot (Drain) Steady State R 38 46 thJF Notes: a. Surface mounted on 1 x 1 FR4 board. b. t = 5 s. c. Maximum under steady state conditions is 120 C/W. d. Package limited Document Number: 62654 www.vishay.com For technical questions, contact: pmostechsupport vishay.com S12-0976-Rev. A, 30-Apr-12 1 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000Si3442CDV Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) J Parameter Symbol Test Conditions Min. Typ.Max.Unit Static Drain-Source Breakdown Voltage V V = 0 V, I = 250 A 20 V DS GS D V Temperature Coefficient V /T 15 DS DS J I = 250 A mV/C D V Temperature Coefficient V /T - 2.8 GS(th) GS(th) J Gate-Source Threshold Voltage V V = V , I = 250 A 0.6 1.5 V GS(th) DS GS D Gate-Source Leakage I V = 0 V, V = 12 V 100 nA GSS DS GS V = 20 V, V = 0 V 1 DS GS Zero Gate Voltage Drain Current I A DSS V = 20 V, V = 0 V, T = 70 C 10 DS GS J a On-State Drain Current I V 5 V, V = 10 V 20 A D(on) DS GS V 10 V, I = 6.5 A 0.0225 0.0270 GS D a Drain-Source On-State Resistance R V 4.5 V, I = 5.9 A 0.0250 0.0300 DS(on) GS D V 2.5 V, I = 2 A 0.0350 0.0490 GS D a Forward Transconductance g V = 10 V, I = 6.5 A 22 S fs DS D b Dynamic Input Capacitance C 335 iss Output Capacitance C 94V = 10 V, V = 0 V, f = 1 MHz pF oss DS GS Reverse Transfer Capacitance C 45 rss V = 10 V, V = 10 V, I = 5 A 9.2 14 DS GS D Total Gate Charge Q g 4.3 7 nC Gate-Source Charge Q 1.1V = 10 V, V = 4.5 V, I = 5 A gs DS GS D Gate-Drain Charge Q 0.9 gd Gate Resistance R f = 1 MHz 0.6 3 6 g Turn-On Delay Time t 918 d(on) Rise Time t 1320 r V = 10 V, R = 1.9 DD L I 5.2 A, V = 4.5 V, R = 1 Turn-Off Delay Time t 1726 D GEN g d(off) Fall Time t 510 f ns Turn-On Delay Time t 36 d(on) Rise Time t 1020 r V = 10 V, R = 1.9 DD L I 5.2 A, V = 10 V, R = 1 Turn-Off Delay Time t 13D GEN g 20 d(off) Fall Time t 612 f Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current I T = 25 C 2.2 S C A Pulse Diode Forward Current I 20 SM Body Diode Voltage V I = 5.2 A, V 0 V 0.8 1.2 V SD S GS Body Diode Reverse Recovery Time t 10 20 ns rr Body Diode Reverse Recovery Charge Q 36 nC rr I = 5.2 A, dI/dt = 100 A/s, T = 25 C F J Reverse Recovery Fall Time t 6 a ns Reverse Recovery Rise Time t 4 b Notes: a. Pulse test pulse width 300 s, duty cycle 2 % b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 62654 For technical questions, contact: pmostechsupport vishay.com 2 S12-0976-Rev. A, 30-Apr-12 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000