New Product Si3453DV Vishay Siliconix P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 a Definition V (V) R () Max. Q (Typ.) I (A) DS DS(on) g D TrenchFET Power MOSFET 0.165 at V = - 10 V - 3.4 GS 100 % R Tested - 30 2.4 nC g 0.276 at V = - 4.5 V - 2.6 GS Compliant to RoHS Directive 2002/95/EC APPLICATIONS Mobile Computing - Load Switch - DC/DC Converters TSOP-6 (4) S Top View 1 6 (3) G 3 mm 5 2 Marking Code BD XXX 3 4 Lot Traceability and Date Code Part Code 2.85 mm (1, 2, 5, 6) D Ordering Information: Si3453DV-T1-GE3 (Lead (Pb)-free and Halogen-free) P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) A Parameter Symbol Limit Unit V Drain-Source Voltage - 30 DS V V Gate-Source Voltage 20 GS T = 25 C C - 3.4 T = 70 C - 2.7 C Continuous Drain Current (T = 150 C) I J D b, c T = 25 C A - 2.5 b, c T = 70 C A A - 2 I Pulsed Drain Current (t = 100 s) - 6 DM T = 25 C - 2.5 C I Continuous Source-Drain Diode Current S b, c T = 25 C A - 1.3 T = 25 C 3 C T = 70 C 1.9 C P Maximum Power Dissipation W D b, c T = 25 C A 1.6 b, c T = 70 C A 1 T , T Operating Junction and Storage Temperature Range - 55 to 150 C J stg THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit b, d R t 5 s 65 78 Maximum Junction-to-Ambient thJA C/W Maximum Junction-to-Foot (Drain) Steady State R 35 42 thJF Notes: a. Based on T = 25 C. C b. Surface mounted on 1 x 1 FR4 board. c. t = 5 s. d. Maximum under steady state conditions is 110 C/W. Document Number: 63538 www.vishay.com S11-2309-Rev. A, 21-Nov-11 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000New Product Si3453DV Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) J Parameter Symbol Test Conditions Min.Typ.Max.Unit Static V V = 0 V, I = - 250 A Drain-Source Breakdown Voltage - 30 V DS GS D V Temperature Coefficient V /T - 20 DS DS J I = - 250 A mV/C D V Temperature Coefficient V /T 3.8 GS(th) GS(th) J V V = V , I = - 250 A Gate-Source Threshold Voltage - 1.2 - 2.5 V GS(th) DS GS D I V = 0 V, V = 20 V Gate-Source Leakage 100 nA GSS DS GS V = - 30 V, V = 0 V - 1 DS GS Zero Gate Voltage Drain Current I A DSS V = - 30 V, V = 0 V, T = 85 C - 10 DS GS J a I V - 5 V, V = - 10 V - 6 A On-State Drain Current D(on) DS GS V = - 10 V, I = - 2.5 A 0.137 0.165 GS D a R Drain-Source On-State Resistance DS(on) V = - 4.5 V, I = - 1.9 A 0.230 0.276 GS D a g V = - 15 V, I = - 2.5 A 3S Forward Transconductance fs DS D b Dynamic C Input Capacitance 155 iss C V = - 15 V, V = 0 V, f = 1 MHz Output Capacitance 35 pF oss DS GS C Reverse Transfer Capacitance 25 rss V = - 15 V, V = - 10 V, I = - 2.5 A 4.5 6.8 DS GS D Q Total Gate Charge g 2.4 3.6 nC Q Gate-Source Charge V = - 15 V, V = - 4.5 V, I = - 2.5 A 1.2 gs DS GS D Q Gate-Drain Charge 0.8 gd Gate Resistance R f = 1 MHz 1.5 7.3 14.6 g t Turn-On Delay Time 48 d(on) Rise Time t 918 V = - 15 V, R = 7.5 r DD L I - 2 A, V = - 10 V, R = 1 t Turn-Off Delay Time D GEN g 11 18 d(off) Fall Time t 714 f ns t Turn-On Delay Time 33 50 d(on) Rise Time t 21 32 V = - 15 V, R = 7.5 r DD L I - 2 A, V = - 4.5 V, R = 1 t Turn-Off Delay Time D GEN g 10 20 d(off) Fall Time t 918 f Drain-Source Body Diode Characteristics I T = 25 C Continuous Source-Drain Diode Current - 2.5 S C A a I - 6 Pulse Diode Forward Current SM Body Diode Voltage V I = - 2 A - 0.84 - 1.2 V SD S t Body Diode Reverse Recovery Time 14 21 ns rr Body Diode Reverse Recovery Charge Q 714 nC rr I = - 2 A, dI/dt = 100 A/s, T = 25 C F J t Reverse Recovery Fall Time 10 a ns t Reverse Recovery Rise Time 4 b Notes: a. Pulse test pulse width 300 s, duty cycle 2 % b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 63538 2 S11-2309-Rev. A, 21-Nov-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000