Si3457BDV Vishay Siliconix P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 V (V) R ()I (A) DS DS(on) D Available 0.054 at V = - 10 V - 5.0 GS TrenchFET Power MOSFETs - 30 0.100 at V = - 4.5 V - 3.7 GS TSOP-6 Top View 1 6 (4) S 3 mm 5 2 (3) G 3 4 2.85 mm (1, 2, 5, 6) D Ordering Information: Si3457BDV-T1-E3 (Lead (Pb)-free) P-Channel MOSFET Si3457BDV-T1-GE3 (Lead (Pb)-free and Halogen-free) Marking Code: 7Bxxx ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted A Parameter Symbol 5 s Steady State Unit Drain-Source Voltage V - 30 DS V V Gate-Source Voltage 20 GS T = 25 C - 5.0 - 3.7 A a I Continuous Drain Current (T = 150 C) D J T = 70 C - 4.0 - 3.0 A A I Pulsed Drain Current - 20 DM a I - 1.7 - 0.95 Continuous Source Current (Diode Conduction) S T = 25 C 2.0 1.14 A a P W Maximum Power Dissipation D = 70 C T 1.3 0.73 A T , T Operating Junction and Storage Temperature Range - 55 to 150 C J stg THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit t 5 s 53 62.5 a R Maximum Junction-to-Ambient thJA Steady State 90 110 C/W R Maximum Junction-to-Foot (Drain) Steady State 25 36 thJF Notes: a. Surface Mounted on 1 x 1 FR4 board. Document Number: 72019 www.vishay.com S09-0136-Rev. E, 02-Feb-09 1Si3457BDV Vishay Siliconix SPECIFICATIONS T = 25 C, unless otherwise noted J Parameter Symbol Test Conditions Min. Typ.Max.Unit Static V V = V , I = - 250 A Gate Threshold Voltage - 1.0 - 3 V GS(th) DS GS D I V = 0 V, V = 20 V Gate-Body Leakage 100 nA GSS DS GS V = - 30 V, V = 0 V - 1 DS GS I Zero Gate Voltage Drain Current A DSS V = - 30 V, V = 0 V, T = 85 C - 5 DS GS J a I V - 5 V, V = - 10 V - 20 A On-State Drain Current D(on) DS GS V = - 10 V, I = - 5.0 A 0.044 0.054 GS D a R Drain-Source On-State Resistance DS(on) V = - 4.5 V, I = - 3.7 A 0.082 0.100 GS D a g V = - 15 V, I = - 5.0 A 10 S Forward Transconductance fs DS D a V I = - 1.7 A, V = 0 V - 0.8 - 1.2 V Diode Forward Voltage SD S GS b Dynamic Total Gate Charge Q 12.5 19 g Q V = - 15 V, V = - 10 V, I = - 5.0 A Gate-Source Charge 2.1 nC gs DS GS D Gate-Drain Charge Q 3.5 gd t Turn-On Delay Time 715 d(on) Rise Time t 10 15 V = - 15 V, R = 15 r DD L I - 1 A, V = - 10 V, R = 6 t Turn-Off Delay Time D GEN g 30 45 ns d(off) Fall Time t 22 35 f t I = - 1.7 A, dI/dt = 100 A/s Source-Drain Reverse Recovery Time 25 60 rr F Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 20 20 V = 10 thru 5 V GS 16 16 12 12 4 V 8 8 4 4 T = 125 C C 25 C 3 V - 55 C 0 0 0 123 456 0 1234 5 V - Gate-to-Source Voltage (V) V - Drain-to-Source Voltage (V) DS GS Output Characteristics Transfer Characteristics www.vishay.com Document Number: 72019 2 S09-0136-Rev. E, 02-Feb-09 I - Drain Current (A) D I - Drain Current (A) D