X-On Electronics has gained recognition as a prominent supplier of SI3457CDV-T1-GE3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SI3457CDV-T1-GE3 MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SI3457CDV-T1-GE3 Vishay

SI3457CDV-T1-GE3 electronic component of Vishay
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See Product Specifications
Part No.SI3457CDV-T1-GE3
Manufacturer: Vishay
Category: MOSFETs
Description: P-Channel 30 V 5.1A (Tc) 2W (Ta), 3W (Tc) Surface Mount 6-TSOP
Datasheet: SI3457CDV-T1-GE3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.6325 ea
Line Total: USD 0.63 
Availability - 21539
Ship by Mon. 23 Dec to Wed. 25 Dec
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
2602
Ship by Wed. 25 Dec to Tue. 31 Dec
MOQ : 1
Multiples : 1
1 : USD 0.5978
10 : USD 0.4662
25 : USD 0.4576
100 : USD 0.3766
250 : USD 0.3728
500 : USD 0.2999
1000 : USD 0.2365

21539
Ship by Mon. 23 Dec to Wed. 25 Dec
MOQ : 1
Multiples : 1
1 : USD 0.6325
10 : USD 0.4257
100 : USD 0.3058
500 : USD 0.2706
1000 : USD 0.2277
3000 : USD 0.2134
9000 : USD 0.2002
24000 : USD 0.1947
45000 : USD 0.1925

1373
Ship by Mon. 23 Dec to Wed. 25 Dec
MOQ : 1
Multiples : 1
1 : USD 0.658
50 : USD 0.4676
75 : USD 0.2324
204 : USD 0.2198
6000 : USD 0.21

2602
Ship by Wed. 25 Dec to Tue. 31 Dec
MOQ : 32
Multiples : 1
32 : USD 0.4576
100 : USD 0.3766
250 : USD 0.3728
500 : USD 0.2999
1000 : USD 0.2365

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Tradename
Configuration
Height
Length
Series
Transistor Type
Width
Brand
Forward Transconductance - Min
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We are delighted to provide the SI3457CDV-T1-GE3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SI3457CDV-T1-GE3 and other electronic components in the MOSFETs category and beyond.

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The SI3457CDV-T1-GE3 is a small package, low side, N-channel MOSFET made by Vishay. It is part of the Si3457 product family, which is a series of low on-resistance, easily switched FETs. The device is a 3-pin, single-gate enhancement mode MOSFET that operates at up to 30 V, has an on-resistance of 10 mO and an Rds(on) of 2.6 mO. It is housed in a 2.9 mm by 2.1 mm package and is RoHS compliant. Typical applications include load switch, electronic load switching, DC/DC converters, and a variety of mobile, automotive, and industrial applications.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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