X-On Electronics has gained recognition as a prominent supplier of SI3457CDV-T1-GE3 MOSFET across the USA, India, Europe, Australia, and various other global locations. SI3457CDV-T1-GE3 MOSFET are a product manufactured by Vishay. We provide cost-effective solutions for MOSFET, ensuring timely deliveries around the world.

SI3457CDV-T1-GE3 Vishay

SI3457CDV-T1-GE3 electronic component of Vishay
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See Product Specifications
Part No.SI3457CDV-T1-GE3
Manufacturer: Vishay
Category: MOSFET
Description: P-Channel 30 V 5.1A (Tc) 2W (Ta), 3W (Tc) Surface Mount 6-TSOP
Datasheet: SI3457CDV-T1-GE3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

3000: USD 0.1456 ea
Line Total: USD 436.8

Availability - 2910
Ship by Fri. 02 Aug to Thu. 08 Aug
MOQ: 3000  Multiples: 3000
Pack Size: 3000
Availability Price Quantity
2893
Ship by Fri. 02 Aug to Thu. 08 Aug
MOQ : 1
Multiples : 1
1 : USD 0.5143
10 : USD 0.5092
25 : USD 0.5041
100 : USD 0.3718
250 : USD 0.3463
500 : USD 0.2913
1000 : USD 0.2443

2910
Ship by Fri. 02 Aug to Thu. 08 Aug
MOQ : 3000
Multiples : 3000
3000 : USD 0.1456
6000 : USD 0.1456
12000 : USD 0.1456
15000 : USD 0.1456
45000 : USD 0.1456

13365
Ship by Thu. 08 Aug to Mon. 12 Aug
MOQ : 1
Multiples : 1
1 : USD 0.5048
10 : USD 0.4301
100 : USD 0.3117
500 : USD 0.2507
1000 : USD 0.2093
3000 : USD 0.1944

1858
Ship by Fri. 02 Aug to Thu. 08 Aug
MOQ : 1
Multiples : 1
1 : USD 0.6048
50 : USD 0.4334
75 : USD 0.2142
205 : USD 0.2029
6000 : USD 0.1953

2910
Ship by Fri. 02 Aug to Thu. 08 Aug
MOQ : 3000
Multiples : 3000
3000 : USD 0.2651

2893
Ship by Fri. 02 Aug to Thu. 08 Aug
MOQ : 32
Multiples : 1
32 : USD 0.2874

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Tradename
Configuration
Height
Length
Series
Transistor Type
Width
Brand
Forward Transconductance - Min
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We are delighted to provide the SI3457CDV-T1-GE3 from our MOSFET category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SI3457CDV-T1-GE3 and other electronic components in the MOSFET category and beyond.

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The SI3457CDV-T1-GE3 is a small package, low side, N-channel MOSFET made by Vishay. It is part of the Si3457 product family, which is a series of low on-resistance, easily switched FETs. The device is a 3-pin, single-gate enhancement mode MOSFET that operates at up to 30 V, has an on-resistance of 10 mO and an Rds(on) of 2.6 mO. It is housed in a 2.9 mm by 2.1 mm package and is RoHS compliant. Typical applications include load switch, electronic load switching, DC/DC converters, and a variety of mobile, automotive, and industrial applications.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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