New Product Si3805DV Vishay Siliconix P-Channel 20-V (D-S) MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY a Halogen-free According to IEC 61249-2-21 V (V) R () I (A) Q (Typ.) DS DS(on) D g Definition 0.084 at V = - 10 V - 3.3 GS LITTLE FOOT Plus Schottky Power MOSFET - 20 0.108 at V = - 4.5 V - 2.9 4 nC GS Compliant to RoHS Directive 2002/95/EC 0.175 at V = - 2.5 V - 2.3 GS APPLICATIONS SCHOTTKY PRODUCT SUMMARY HDD V (V) f - DC-DC Converter a V (V) Diode Forward Voltage KA I (A) F 20 0.5 at 1 A 2 S A TSOP-6 Top View A K 1 6 G 3 mm N/C S 5 2 Marking Code II XXX G D 3 4 Lot Tracea b ility and Date Code Part Code 2. 85 mm D K Ordering Information: Si3805DV-T1-E3 (Lead (Pb)-free) Si3805DV-T1-GE3 (Lead (Pb)-free and Halogen-free) P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted A Parameter Symbol Limit Unit V Drain-Source Voltage (MOSFET) - 20 DS V Reverse Voltage (Schottky) 20 V KA V Gate-Source Voltage (MOSFET) 12 GS T = 25 C - 3.3 C T = 70 C - 2.7 C Continuous Drain Current (T = 150 C) (MOSFET) I J D b, c T = 25 C - 3.0 A b, c T = 70 C - 2.4 A I Pulsed Drain Current (MOSFET) - 15 A DM T = 25 C - 1.2 Continuous Source-Drain Diode Current C I S b, c (MOSFET Diode Conduction) T = 25 C - 0.9 A b I Average Forward Current (Schottky) F 2 Pulsed Forward Current (Schottky) I 5 FM T = 25 C 1.4 C T = 70 C 0.9 C Maximum Power Dissipation (MOSFET) b, c T = 25 C 1.1 A b, c T = 70 C 0.7 A P W D T = 25 C 1.4 C T = 70 C 0.9 C Maximum Power Dissipation (Schottky) b, c T = 25 C 1.1 A b, c T = 70 C 0.7 A T , T Operating Junction and Storage Temperature Range - 55 to 150 C J stg Document Number: 68912 www.vishay.com S09-2110-Rev. B, 12-Oct-09 1New Product Si3805DV Vishay Siliconix THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit b, d R t 5 s 93 110 Maximum Junction-to-Ambient (MOSFET) thJA R Steady State 75 90 Maximum Junction-to-Foot (Drain) (MOSFET) thJF C/W b, e R t 5 s thJA 97 115 Maximum Junction-to-Ambient (Schottky) R Maximum Junction-to-Foot (Drain) (Schottky) Steady State 78 95 thJF Notes: a. Based on T = 25 C. C b. Surface Mounted on 1 x 1 FR4 board. c. t = 5 s d. Maximum under Steady State conditions is 150 C/W. e. Maximum under Steady State conditions is 155 C/W. SPECIFICATIONS T = 25 C, unless otherwise noted J Parameter Symbol Test Conditions Min. Typ.Max.Unit Static Drain-Source Breakdown Voltage V V = 0 V, I = - 250 A - 20 V DS GS D V Temperature Coefficient V /T - 20 DS DS J I = - 250 A mV/C D V Temperature Coefficient V /T 3 GS(th) GS(th) J Gate-Source Threshold Voltage V V = V , I = - 250 A - 0.6 - 1.5 V GS(th) DS GS D Gate-Source Leakage I V = 0 V, V = 12 V 100 nA GSS DS GS V = - 20 V, V = 0 V - 1 DS GS Zero Gate Voltage Drain Current I A DSS V = - 20 V, V = 0 V, T = 55 C - 10 DS GS J a I V 5 V, V = - 4.5 V - 15 A On-State Drain Current D(on) DS GS V = - 10 V, I = - 3.0 A 0.070 0.084 GS D a R V = - 4.5 V, I = - 2.6 A 0.090 0.108 Drain-Source On-State Resistance DS(on) GS D V = - 2.5 V, I = 2.1 A 0.140 0.175 GS D a g V = - 10 V, I = - 3.0 A 6S Forward Transconductance fs DS D b Dynamic C Input Capacitance 330 iss C V = - 10 V, V = 0 V, f = 1 MHz Output Capacitance 80 pF oss DS GS C Reverse Transfer Capacitance 57 rss V = - 10 V, V = - 10 V, I = - 3.0 A 812 DS GS D Q Total Gate Charge g 46 nC Q V = - 10 V, V = - 4.5 V, I = - 3.0 A Gate-Source Charge 0.8 gs DS GS D Q Gate-Drain Charge 1.4 gd R Gate Resistance f = 1 MHz 1.2 6 12 g t Turn-On Delay Time 36 d(on) t V = - 10 V, R = 4.2 Rise Time 10 20 r DD L t I - 2.4 A, V = - 10 V, R = 1 Turn-Off DelayTime 16 24 d(off) D GEN g t Fall Time 815 f ns t Turn-On Delay Time 18 27 d(on) t V = - 10 V, R = 4.2 Rise Time 40 60 r DD L t I - 2.4 A, V = - 4.5 V, R = 1 Turn-Off DelayTime 18 27 d(off) D GEN g t Fall Time 10 15 f www.vishay.com Document Number: 68912 2 S09-2110-Rev. B, 12-Oct-09