Si3447CDV Vishay Siliconix P-Channel 12-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 a V (V) R () Q (Typ.) DS DS(on) I (A) g D Definition 0.036 at V = - 4.5 V - 7.8 TrenchFET Power MOSFET GS PWM Optimized 0.050 at V = - 2.5 V - 12 - 6.6 12 nC GS Compliant to RoHS Directive 2002/95/EC 0.068 at V = - 1.8 V - 5.6 GS APPLICATIONS Load Switch PA Switch TSOP-6 (4) S Top View 1 6 3 mm 5 2 (3) G Marking Code AO XXX 3 4 Lot Traceability and Date Code Part Code 2.85 mm (1, 2, 5, 6) D Ordering Information: Si3447CDV-T1-E3 (Lead (Pb)-free) Si3447CDV-T1-GE3 (Lead (Pb)-free and Halogen-free) P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted A Parameter Symbol Limit Unit Drain-Source Voltage V - 12 DS V Gate-Source Voltage V 8 GS T = 25 C - 7.8 C T = 70 C - 6.2 C Continuous Drain Current (T = 150 C) I J D b, c T = 25 C - 6.3 A b, c T = 70 C A - 5.0 A Pulsed Drain Current I - 20 DM T = 25 C - 2.5 C I Continuous Source-Drain Diode Current b, c S T = 25 C - 1.67 A T = 25 C 3.0 C T = 70 C 2.0 C P Maximum Power Dissipation W D b, c T = 25 C 2.0 A b, c T = 70 C 1.3 A T , T Operating Junction and Storage Temperature Range - 55 to 150 C J stg THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit b, d t 5 s R 55 62.5 Maximum Junction-to-Ambient thJA C/W Steady State R Maximum Junction-to-Foot (Drain) 34 41 thJF Notes: a. Based on T = 25 C. C b. Surface Mounted on 1 x 1 FR4 board. c. t = 5 s. d. Maximum under Steady State conditions is 110 C/W. Document Number: 69784 www.vishay.com S-09-0660-Rev. B, 20-Apr-09 1Si3447CDV Vishay Siliconix SPECIFICATIONS T = 25 C, unless otherwise noted J Parameter Symbol Test Conditions Min.Typ.Max.Unit Static V V = 0 V, I = - 250 A Drain-Source Breakdown Voltage - 12 V DS GS D V Temperature Coefficient V /T - 15 DS DS J I = - 250 A mV/C D V Temperature Coefficient V /T 2.5 GS(th) GS(th) J V V = V , I = - 250 A Gate-Source Threshold Voltage - 0.4 - 1.0 V GS(th) DS GS D I V = 0 V, V = 8 V Gate-Source Leakage 100 nA GSS DS GS V = - 12 V, V = 0 V - 1 DS GS Zero Gate Voltage Drain Current I A DSS V = - 12 V, V = 0 V, T = 55 C - 10 DS GS J a I V - 5 V, V = - 4.5 V - 20 A On-State Drain Current D(on) DS GS V = - 4.5 V, I = - 6.3 A 0.03 0.036 GS D a R V = - 2.5 V, I = - 5.3 A 0.041 0.050 Drain-Source On-State Resistance DS(on) GS D V = - 1.8 V, I = - 1.5 A 0.055 0.068 GS D a g V = - 6 V, I = - 6.3 A 20 S Forward Transconductance fs DS D b Dynamic C Input Capacitance 910 iss C V = - 6 V, V = 0 V, f = 1 MHz Output Capacitance 260 pF oss DS GS C Reverse Transfer Capacitance 220 rss V = - 6 V, V = - 8 V, I = - 6.3 A 20 30 DS GS D Total Gate Charge Q g 12 18 nC Q Gate-Source Charge V = - 6 V, V = - 4.5 V, I = - 6.3 A 1.6 gs DS GS D Gate-Drain Charge Q 3.4 gd R Gate Resistance f = 1 MHz 6 g Turn-On Delay Time t 20 30 d(on) t Rise Time V = - 6 V, R = 1.2 40 60 r DD L I - 5 A, V = - 4.5 V, R = 1 Turn-Off Delay Time t 35 55 D GEN g d(off) t Fall Time 20 30 f ns Turn-On Delay Time t 10 15 d(on) t Rise Time V = - 6 V, R = 1.2 15 25 r DD L I - 5 A, V = - 8 V, R = 1 Turn-Off Delay Time t D GEN g 35 55 d(off) t Fall Time 15 25 f Drain-Source Body Diode Characteristics I T = 25 C Continuous Source-Drain Diode Current - 2.5 S C A a I - 20 Pulse Diode Forward Current SM Body Diode Voltage V I = - 5 A - 0.8 - 1.2 V SD S t Body Diode Reverse Recovery Time 35 55 ns rr Q Body Diode Reverse Recovery Charge 20 30 nC rr I = - 5 A, dI/dt = 100 A/s, T = 25 C F J t Reverse Recovery Fall Time 16 a ns t Reverse Recovery Rise Time 19 b Notes: a. Pulse test pulse width 300 s, duty cycle 2 % b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 69784 2 S-09-0660-Rev. B, 20-Apr-09