Si3443BDV Vishay Siliconix P-Channel 2.5-V (G-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 V (V) R ()I (A) DS DS(on) D Definition 0.060 at V = - 4.5 V - 4.7 GS TrenchFET Power MOSFET 100 % R Tested - 20 0.090 at V = - 2.7 V - 3.8 GS g Compliant to RoHS Directive 2002/95/EC 0.100 at V = - 2.5 V - 3.7 GS TSOP-6 (4) S Top V iew 1 6 (3) G 3 mm 5 2 3 4 2.85 mm (1, 2, 5, 6) D Ordering Information: Si3443BDV-T1-E3 (Lead (Pb)-free) Si3443BDV-T1-GE3 (Lead (Pb)-free and Halogen-free) Part Marking Code: 3B P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted A Parameter Symbol 5 s Steady State Unit Drain-Source Voltage V - 20 DS V V Gate-Source Voltage 12 GS T = 25 C - 4.7 - 3.6 A a I Continuous Drain Current (T = 150 C) D J T = 70 C - 3.8 - 2.8 A A I Pulsed Drain Current - 20 DM a I - 1.7 - 0.9 Continuous Source Current (Diode Conduction) S T = 25 C 2.0 1.1 A a P W Maximum Power Dissipation D = 70 C T 1.3 0.7 A T , T Operating Junction and Storage Temperature Range - 55 to 150 C J stg THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit t 5 s 50 62.5 a R Maximum Junction-to-Ambient thJA Steady State 90 110 C/W R Maximum Junction-to-Foot (Drain) Steady State 30 36 thJF Notes a. Surface Mounted on FR4 board, t 5 s. For SPICE model information via the Worldwide Web: www.vishay.com/www/product/spice.htm Document Number: 72749 www.vishay.com S-09-0660-Rev. C, 20-Apr-09 1Si3443BDV Vishay Siliconix SPECIFICATIONS T = 25 C, unless otherwise noted J Parameter Symbol Test Conditions Min.Typ.Max.Unit Static V V = V , I = - 250 A Gate Threshold Voltage - 0.6 - 1.4 V GS(th) DS GS D I V = 0 V, V = 12 V Gate-Body Leakage 100 nA GSS DS GS V = - 20 V, V = 0 V - 1 DS GS I Zero Gate Voltage Drain Current A DSS V = - 20 V, V = 0 V, T = 70 C - 5 DS GS J a I V = - 5 V, V = - 4.5 V - 15 A On-State Drain Current D(on) DS GS V = - 4.5 V, I = - 4.7 A 0.048 0.060 GS D a R V = - 2.7 V, I = - 3.8 A 0.070 0.090 Drain-Source On-State Resistance DS(on) GS D V = - 2.5 V, I = - 1 A 0.080 0.100 GS D a g V = - 10 V, I = - 4.7 A 11 S Forward Transconductance fs DS D a V I = - 1.7 A, V = 0 V - 0.8 - 1.2 V Diode Forward Voltage SD S GS b Dynamic Q Total Gate Charge 69 g Gate-Source Charge Q V = - 10 V, V = - 4.5 V, I = - 4.7 A 1.4 nC gs DS GS D Q Gate-Drain Charge 1.9 gd Gate Resistance R f = 1 MHz 5 9.5 16.2 g t Turn-On Delay Time 22 35 d(on) Rise Time t 35 55 V = - 10 V, R = 10 r DD L I - 1.0 A, V = - 4.5 V, R = 6 t Turn-Off Delay Time D GEN g 45 70 d(off) ns Fall Time t 25 40 f Source-Drain Reverse Recovery t I = - 1.7 A, dI/dt = 100 A/s 25 50 rr F Time Notes a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 20 20 T = - 55 C V = 5 V thru 3.5 V GS C 3 V 25 C 16 16 125 C 12 12 2.5 V 8 8 2 V 4 4 1.5 V 0 0 0 1234 5 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 V - Drain-to-Source Voltage (V) V - Gate-to-Source Voltage (V) DS GS Output Characteristics Transfer Characteristics www.vishay.com Document Number: 72749 2 S-09-0660-Rev. C, 20-Apr-09 I - Drain Current (A) D I - Drain Current (A) D