Si2377EDS www.vishay.com Vishay Siliconix P-Channel 20 V (D-S) MOSFET FEATURES SOT-23 (TO-236) TrenchFET power MOSFET D 3 100% R tested g Typical ESD performance 2000 V Built in ESD protection with Zener Diode 2 S Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 1 G Top View APPLICATIONS Marking Code: P6 S Load switch for portable devices PRODUCT SUMMARY V (V) -20 DS R max. () at V = -4.5 V 0.061 DS(on) GS R max. () at V = -2.5 V 0.080 DS(on) GS G R max. () at V = -1.8 V 0.110 R DS(on) GS R max. () at V = -1.5 V 0.165 DS(on) GS Q typ. (nC) 7.6 g a I (A) -4.4 D D P-Channel MOSFET Configuration Single ORDERING INFORMATION Package SOT-23 Lead (Pb)-free and halogen-free Si2377EDS-T1-GE3 ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) A PARAMETER SYMBOL LIMITUNIT Drain-source voltage V -20 DS V Gate-source voltage V 8 GS T = 25 C -4.4 C T = 70 C 3.5 C Continuous drain current (T = 150 C) I J D b, c T = 25 C -3.7 A b, c T = 70 C -2.9 A A Pulsed drain current I -20 DM T = 25 C -1.5 C Continuous source-drain diode current I S b, c T = 25 C -1 A T = 25 C 1.8 C T = 70 C 1.1 C Maximum power dissipation P W D b, c T = 25 C 1.25 A b, c T = 70 C 0.8 A Operating junction and storage temperature range T , T -55 to +150 J stg C d, e Soldering recommendations (peak temperature) 260 THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYPICALMAXIMUMUNIT b, d Maximum junction-to-ambient t 5 s R 80 100 thJA C/W Maximum junction-to-foot (drain) Steady state R 55 70 thJF Notes a. T = 25 C C b. Surface mounted on 1 x 1 FR4 board c. t = 5 s d. Maximum under steady state conditions is 130 C/W S10-0542-Rev. A, 08-Mar-10 Document Number: 65905 1 For technical questions, contact: pmostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 Si2377EDS www.vishay.com Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOL TEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-source breakdown voltage V V = 0 V, I = -250 A -20 - - V DS GS D V temperature coefficient V /T --13 - DS DS J I = -250 A mV/C D V temperature coefficient V /T -2.5 - GS(th) GS(th) J Gate-source threshold voltage V V = V , I = -250 A -0.4 - -1 V GS(th) DS GS D V = 0 V, V = 8 V - - 6 DS GS Gate-source leakage I GSS V = 0 V, V = 4.5 V - - 0.5 DS GS A V = -20 V, V = 0 V - - -1 DS GS Zero gate voltage drain current I DSS V = -20 V, V = 0 V, T = 55 C - - -10 DS GS J a On-state drain current I V -5 V, V = -4.5 V -15 - - A D(on) DS GS V = -4.5 V, I = -3.2 A - 0.050 0.061 GS D V = -2.5 V, I = -2.8 A - 0.065 0.080 GS D a Drain-source on-state resistance R DS(on) V = -1.8 V, I = -1.5 A - 0.090 0.110 GS D V = -1.5 V, I = -0.5 A - 0.110 0.165 GS D a Forward transconductance g V = -10 V, I = -3.2 A - 12 - S fs DS D b Dynamic V = -10 V, V = -8 V, I = -5.3 A -14 21 DS GS D Total gate charge Q g -7.6 12 nC Gate-source charge Q V = -10 V, V = -4.5 V, I = -5.3 A -0.8 - DS GS D gs Gate-drain charge Q -3.1 - gd Gate resistance R f = 1 MHz 0.4 2 4 k g Turn-on delay time t -0.2 0.3 d(on) Rise time t -1 1.5 V = -10 V, R = 2.3 r DD L I -4.3 A, V = -4.5 V, R = 1 D GEN g Turn-off delay time t -46 d(off) Fall time t -2 3 f s Turn-on delay time t - 0.09 0.14 d(on) Rise time t -0.4 0.6 V = -10 V, R = 2.3 r DD L I -4.3 A, V = -8 V, R = 1 D GEN g Turn-off delay time t -5.27.8 d(off) Fall time t -2.3 3.5 f Drain-Source Body Diode Characteristics T = 25 C Continuous source-drain diode current I -- -1.5 S C A -- -20 Pulse diode forward current I SM Body diode voltage V I = -3 A, V = 0 V - -0.8 -1.2 V S GS SD Body diode reverse recovery time t -30 60 ns rr Body diode reverse recovery charge Q -20 40 nC rr I = -3 A, di/dt = 100 A/s, F T = 25 C Reverse recovery fall time t J -13- a ns Reverse recovery rise time t -17- b Notes a. Pulse test pulse width 300 s, duty cycle 2% b. Guaranteed by design, not subject to production testing Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S10-0542-Rev. A, 08-Mar-10 Document Number: 65905 2 For technical questions, contact: pmostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000