Si3410DV Vishay Siliconix N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 a V (V) R () Q (Typ.) I (A) DS DS(on) g D Definition TrenchFET Power MOSFET 0.0195 at V = 10 V 8 GS 30 9.2 nC Compliant to RoHS Directive 2002/95/EC 0.023 at V = 4.5 V 8 GS APPLICATIONS Notebook Load Switch Low Current dc-to-dc TSOP-6 Top View D 1 6 D D (1, 2, 5, 6) 3 mm D D 5 2 Marking Code AM XXX G S 3 4 Lot Traceability and Date Code G (3) Part Code 2.85 mm (4) S Ordering Information: Si3410DV-T1-E3 (Lead (Pb)-free) Si3410DV-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted A Parameter Symbol Limit Unit Drain-Source Voltage V 30 DS V Gate-Source Voltage V 20 GS a T = 25 C 8 C a T = 70 C 8 C Continuous Drain Current (T = 150 C) I J D b,c T = 25 C 7.5 A b,c T = 70 C A 5.9 A I 30 Pulsed Drain Current DM 2.7 T = 25 C C I Continuous Source-Drain Diode Current S b,c T = 25 C 1.7 A T = 25 C 4.1 C T = 70 C 2.6 C P Maximum Power Dissipation W D b,c T = 25 C A 2 b,c T = 70 C A 1.25 Operating Junction and Storage Temperature Range T , T - 55 to 150 C J stg THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit b, d R t 5 s 45 62.5 Maximum Junction-to-Ambient thJA C/W R Maximum Junction-to-Foot Steady State 25 30 thJF Notes: a. Package Limited. b. Surface mounted on 1 x 1 FR4 board. c. t = 5 s. d. Maximum under Steady State conditions is 110 C/W. Document Number: 69254 www.vishay.com S09-2110-Rev. B, 12-Oct-09 1Si3410DV Vishay Siliconix SPECIFICATIONS T = 25 C, unless otherwise noted J Parameter Symbol Test Conditions Min.Typ.Max.Unit Static Drain-Source Breakdown Voltage V V = 0 V, I = 250 A 30 V DS GS D V Temperature Coefficient V /T 33 DS DS J I = 250 A mV/C D V Temperature Coefficient V /T - 6.2 GS(th) GS(th) J Gate-Source Threshold Voltage V V = V , I = 250 A 13V GS(th) DS GS D Gate-Source Leakage I V = 0 V, V = 20 V 100 nA GSS DS GS V = 30 V, V = 0 V 1 DS GS Zero Gate Voltage Drain Current I A DSS V = 30 V, V = 0 V, T = 55 C 10 DS GS J a I V 5 V, V = 10 V 20 A On-State Drain Current D(on) DS GS V = 10 V, I = 5 A 0.016 0.0195 GS D a R Drain-Source On-State Resistance DS(on) V = 4.5 V, I = 4 A 0.019 0.023 GS D a g V = 10 V, I = 5 A 24 S Forward Transconductance fs DS D b Dynamic C Input Capacitance 1295 iss C V = 15 V, V = 0 V, f = 1 MHz Output Capacitance 170 pF oss DS GS C Reverse Transfer Capacitance 72 rss V = 15 V, V = 10 V, I = 5 A 21.8 33 DS GS D Q Total Gate Charge g 9.2 14 nC Q V = 15 V, V = 4.5 V, I = 5 A Gate-Source Charge 3.8 gs DS GS D Q Gate-Drain Charge 2.5 gd R Gate Resistance f = 1 MHz 2.4 g t Turn-On Delay Time 21 40 d(on) t V = 15 V, R = 3 Rise Time 14 25 r DD L t I 5 A, V = 4.5 V, R = 1 Turn-Off DelayTime 20 40 d(off) D GEN g t Fall Time 918 f ns t Turn-On Delay Time 10 20 d(on) t V = 15 V, R = 3 Rise Time 816 r DD L t I 5 A, V = 10 V, R = 1 Turn-Off DelayTime 21 35 d(off) D GEN g t Fall Time 816 f Drain-Source Body Diode Characteristics I T = 25 C Continous Source-Drain Diode Current 2.7 S C A I Pulse Diode Forward Current 30 SM V I = 1.7 A, V = 0 V Body Diode Voltage 0.77 1.2 V SD S GS t Body Diode Reverse Recovery Time 21 40 ns rr Q Body Diode Reverse Recovery Charge 15 30 nC rr I = 3 A, dI/dt = 100 A/s, T = 25 C F J t Reverse Recovery Fall Time 13 a ns t Reverse Recovery Rise Time 8 b Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 69254 2 S09-2110-Rev. B, 12-Oct-09