Si2347DS Vishay Siliconix P-Channel 30 V (D-S) MOSFET FEATURES MOSFET PRODUCT SUMMARY TrenchFET Power MOSFET a V (V) R () Max. Q (Typ.) I (A) DS DS(on) g 100 % R Tested D g Material categorization: 0.042 at V = - 10 V - 5 GS For definitions of compliance please see - 30 0.054 at V = - 6 V - 4.4 6.9 nC GS www.vishay.com/doc 99912 0.068 at V = - 4.5 V - 3.9 GS APPLICATIONS Load Switch Notebook Adaptor Switch DC/DC Converter Power Management TO-236 (SOT-23) G 1 3 D S 2 Top View Si2347DS (F7)* * Marking Code Ordering Information: Si2347DS-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) A Parameter Symbol Limit Unit V Drain-Source Voltage - 30 DS V V Gate-Source Voltage 20 GS T = 25 C - 5 C T = 70 C - 4 C Continuous Drain Current (T = 150 C) I J D b,c T = 25 C A - 3.8 b,c T = 70 C A A - 3 I Pulsed Drain Current (t = 300 s) - 20 DM T = 25 C - 1.4 C Continuous Source-Drain Diode Current I S b,c T = 25 C A - 0.63 T = 25 C 1.7 C T = 70 C 1.1 C Maximum Power Dissipation P W D b, c T = 25 C A 1.20 b, c T = 70 C A 0.6 Operating Junction and Storage Temperature Range T , T - 55 to 150 C J stg THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit b, d 5 s R 100 130 Maximum Junction-to-Ambient thJA C/W Steady State R Maximum Junction-to-Foot (Drain) 60 75 thJF Notes: a. Based on T = 25 C. C b. Surface mounted on 1 x 1 FR4 board. c. t = 5 s. d. Maximum under steady state conditions is 175 C/W. Document Number: 62827 www.vishay.com For technical questions, contact: pmostechsupport vishay.com S13-0111-Rev. A, 21-Jan-13 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000Si2347DS Vishay Siliconix MOSFET SPECIFICATIONS (T = 25 C, unless otherwise noted) J Parameter Symbol Test Conditions Min.Typ.Max.Unit Static V V = 0 V, I = - 250 A Drain-Source Breakdown Voltage - 30 V DS GS D V Temperature Coefficient V /T - 25 DS DS J mV/C I = - 250 A D V Temperature Coefficient V /T 3.9 GS(th) GS(th) J V V = V , I = - 250 A Gate-Source Threshold Voltage - 1 - 2.5 V GS(th) DS GS D I V = 0 V, V = 20 V Gate-Source Leakage 100 nA GSS DS GS V = - 30 V, V = 0 V - 1 DS GS I Zero Gate Voltage Drain Current A DSS V = - 30 V, V = 0 V, T = 55 C - 10 DS GS J a I V - 5 V, V = - 10 V - 20 A On-State Drain Current D(on) DS GS V = - 10 V, I = - 3.8 A 0.033 0.042 GS D a R V = - 6 V, I = - 3.3 A 0.041 0.054 Drain-Source On-State Resistance DS(on) GS D V = - 4.5 V, I = - 3 A 0.050 0.068 GS D a g V = - 5 V, I = - 3.8 A 10 S Forward Transconductance fs DS D b Dynamic C Input Capacitance 705 iss Output Capacitance C V = - 15 V, V = 0 V, f = 1 MHz 93 pF oss DS GS C Reverse Transfer Capacitance 73 rss V = - 15 V, V = - 10 V, I = - 5 A 14.5 22 DS GS D Q Total Gate Charge g 6.9 10.4 nC Q Gate-Source Charge V = - 15 V, V = - 4.5 V, I = - 5 A 2.3 gs DS GS D Q Gate-Drain Charge 2.1 gd R Gate Resistance f = 1 MHz 1.7 8.3 17 g t Turn-On Delay Time 612 d(on) t Rise Time V = - 15 V, R = 5 612 r DD L ns I = - 3 A, V = - 10 V, R = 1 t Turn-Off Delay Time D GEN G 19 29 d(off) t Fall Time 918 f t Turn-On Delay Time 10 20 d(on) Rise Time t 918 V = - 15 V, R = 5 r DD L ns I = - 3 A, V = - 6 V, R = 1 t Turn-Off Delay Time D GEN G 18 27 d(off) Fall Time t 714 f Drain-Source Body Diode Characteristics I T = 25 C Continuous Source-Drain Diode Current - 1.4 S C A a I - 20 Pulse Diode Forward Current SM Body Diode Voltage V I = - 3 A - 0.8 - 1.2 V SD S t Body Diode Reverse Recovery Time 13 20 ns rr Body Diode Reverse Recovery Charge Q 510 nC rr I = - 3 A, dI/dt = 100 A/s, T = 25 C F J t Reverse Recovery Fall Time 7 a ns Reverse Recovery Rise Time t 6 b Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 62827 For technical questions, contact: pmostechsupport vishay.com 2 S13-0111-Rev. A, 21-Jan-13 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000