X-On Electronics has gained recognition as a prominent supplier of SI2325DS-T1-E3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SI2325DS-T1-E3 MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SI2325DS-T1-E3 Vishay

SI2325DS-T1-E3 electronic component of Vishay
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Part No.SI2325DS-T1-E3
Manufacturer: Vishay
Category: MOSFETs
Description: MOSFET 150V 0.69A 0.75W
Datasheet: SI2325DS-T1-E3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 1.0967 ea
Line Total: USD 1.1 
Availability - 43876
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
2856
Ship by Fri. 06 Dec to Wed. 11 Dec
MOQ : 1
Multiples : 1
1 : USD 0.698
10 : USD 0.5766
30 : USD 0.5177
100 : USD 0.4571
500 : USD 0.4211
1000 : USD 0.4041

43876
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ : 1
Multiples : 1
1 : USD 1.0967
10 : USD 0.7733
100 : USD 0.5951
500 : USD 0.5016
1000 : USD 0.4565
3000 : USD 0.4147
6000 : USD 0.4136
9000 : USD 0.3993
24000 : USD 0.3982

13317
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 162
Multiples : 1
162 : USD 0.9262
250 : USD 0.7618
500 : USD 0.6421

40740
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 3000
Multiples : 3000
3000 : USD 0.5356
6000 : USD 0.5117
9000 : USD 0.4996
24000 : USD 0.499

49470
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 3000
Multiples : 3000
3000 : USD 0.5043
6000 : USD 0.4816
9000 : USD 0.4704
24000 : USD 0.4697

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Tradename
Configuration
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Factory Pack Quantity :
Series
Transistor Type
Forward Transconductance - Min
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We are delighted to provide the SI2325DS-T1-E3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SI2325DS-T1-E3 and other electronic components in the MOSFETs category and beyond.

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Si2325DS Vishay Siliconix P-Channel 150-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 V (V) R ()I (A) Q (Typ.) DS DS(on) D g Available 1.2 at V = - 10 V - 0.69 GS TrenchFET Power MOSFET - 150 7.7 1.3 at V = - 6.0 V - 0.66 GS Ultra Low On-Resistance Small Size APPLICATIONS Active Clamp Circuits in DC/DC Power Supplies TO-236 (SOT-23) G 1 3 D S 2 Top View Si2325DS (D5)* * Marking Code Ordering Information: Si2325DS -T1-E3 (Lead (Pb)-free) Si2325DS -T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted A Parameter Symbol 5 s Steady State Unit V Drain-Source Voltage - 150 DS V Gate-Source Voltage V 20 GS T = 25 C - 0.69 - 0.53 A a, b I Continuous Drain Current (T = 150 C) D J T = 70 C - 0.55 - 0.43 A I Pulsed Drain Current - 1.6 A DM a, b I - 1.0 - 0.6 Continuous Source Current (Diode Conduction) S Single Pulse Avalanche Current I 4.5 AS L = 1.0 mH E Single Pulse Avalanche Energy 1.01 mJ AS T = 25 C 1.25 0.75 A a, b P W Maximum Power Dissipation D T = 70 C 0.8 0.48 A T , T Operating Junction and Storage Temperature Range - 55 to 150 C J stg THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit t 5 s 75 100 a R Maximum Junction-to-Ambient thJA Steady State 120 166 C/W R Maximum Junction-to-Foot (Drain) Steady State 40 50 thJF Notes: a. Surface Mounted on 1 x 1 FR4 board. b. Pulse width limited by maximum junction temperature. Document Number: 73238 www.vishay.com S09-0133-Rev. B, 02-Feb-09 1Si2325DS Vishay Siliconix SPECIFICATIONS T = 25 C, unless otherwise noted J Limits Parameter Symbol Test Conditions Unit Min. Typ. Max. Static V V = 0 V, I = - 250 A Drain-Source Breakdown Voltage - 150 (BR)DSS GS D V V V = V , I = - 250 A Gate-Threshold Voltage - 2.5 - 4.5 GS(th) DS GS D I V = 0 V, V = 20 V Gate-Body Leakage 100 nA GSS DS GS V = - 150 V, V = 0 V - 1 DS GS Zero Gate Voltage Drain Current I A DSS V = - 150 V, V = 0 V, T = 55 C - 10 DS GS J a I V - 15 V, V = 10 V - 1.6 A On-State Drain Current D(on) DS GS V = - 10 V, I = - 0.5 A 1.0 1.2 GS D a R Drain-Source On-Resistance DS(on) V = - 6.0 V, I = - 0.5 A 1.05 1.3 GS D a g V = - 15 V, I = - 0.5 A 2.2 S Forward Transconductance fs DS D V I = - 1.0 A, V = 0 V Diode Forward Voltage 0.7 - 1.2 V SD S GS b Dynamic Total Gate Charge Q 7.7 12 g V = - 75 V, V = 10 V, DS GS Q Gate-Source Charge 1.5 nC gs I - 0.5 A D Gate-Drain Charge Q 2.5 gd R Gate Resistance f = 1.0 MHz 9 g C Input Capacitance 340 510 iss C V = - 25 V, V = 0 V, f = 1 MHz Output Capacitance 30 pF oss DS GS C Reverse Transfer Capacitance 16 rss c Switching t 711 d(on) Turn-On Time V = - 75 V, R = 75 DD L t 11 17 r I - 1.0 A, V = - 10 V ns D GEN t 16 25 d(off) R = 6 Turn-Off Time g t 11 17 f Q I = 0.5 A, dI/dt = 100 A/s Body Diode Reverse Recovery Charge 90 135 nC rr F Notes: a. Pulse test: PW 300 s duty cycle 2 %. b. For DESIGN AID ONLY, not subject to production testing. c. Switching time is essentially independent of operating temperature. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 73238 2 S09-0133-Rev. B, 02-Feb-09

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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