Si2328DS Vishay Siliconix N-Channel 100 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 V (V) R ()I (A) DS DS(on) D Definition 100 0.250 at V = 10 V 1.5 GS 100 % R and UIS Tested g TrenchFET Power MOSFET Compliant to RoHS Directive 2002/95/EC TO-236 (SOT-23) G 1 3 D S 2 Top View Si2328DS (D8)* *Marking Code Ordering Information: Si2328DS-T1-E3 (Lead (Pb)-free) Si2328DS-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) A Parameter Symbol 5 s Steady State Unit 100 Drain-Source Voltage V DS V Gate-Source Voltage V 20 GS T = 25 C 1.5 1.15 A a Continuous Drain Current (T = 150 C) I J D T = 70 C 1.2 0.92 A A b Pulsed Drain Current I 6 DM b Avalanche Current I 6 AS L = 0.1 mH Single Avalanche Energy E 1.8 mJ AS a Continuous Source Current (Diode Conduction) I 0.6 A S T = 25 C 1.25 0.73 A a Power Dissipation P W D T = 70 C 0.80 0.47 A Operating Junction and Storage Temperature Range T , T - 55 to 150 C J stg THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit t 5 s 80 100 a Maximum Junction-to-Ambient R thJA Steady State 130 170 C/W Maximum Junction-to-Foot Steady State R 45 55 thJF Notes: a. Surface mounted on 1 x 1 FR4 board. b. Pulse width limited by maximum junction temperature. Document Number: 71796 www.vishay.com S11-2000-Rev. F, 10-Oct-11 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000Si2328DS Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) A Limits Parameter Symbol Test Conditions Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage V V = 0 V, I = 1 mA 100 DS GS D V Gate-Threshold Voltage V V = V , I = 250 A 2 4 GS(th) DS GS D Gate-Body Leakage I V = 0 V, V = 20 V 100 nA GSS DS GS V = 100 V, V = 0 V 1 DS GS Zero Gate Voltage Drain Current I A DSS V = 100 V, V = 0 V, T = 70 C 75 DS GS J a On-State Drain Current I V 15 V, V = 10 V 6 A D(on) DS GS a Drain-Source On-Resistance R V = 10 V, I = 1.5 A 0.195 0.250 DS(on) GS D a Forward Transconductance g V = 15 V, I = 1.5 A 4 S fs DS D Diode Forward Voltage V I = 1 A, V = 0 V 0.8 1.2 V SD S GS b Dynamic Total Gate Charge Q 3.3 5 g Gate-Source Charge Q V = 50 V, V = 10 V, I = 1.5 A 0.47 nC gs DS GS D Gate-Drain Charge Q 1.45 gd Gate Resistance R 0.5 1.3 2.4 g Switching Turn-On Delay Time t 711 d(on) Rise Time t 11 17 V = 50 V, R = 33 r DD L I 0.2 A, V = 10 V, R = 6 Turn-Off Delay Time t 91D GEN g 5 ns d(off) Fall Time t 10 15 f Source-Drain Reverse Recovery Time t I = 1.5 A, dI/dt = 100 A/s 50 100 rr F Notes: a. Pulse test: PW 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS (25 C, unless otherwise noted) 12 12 V = 10 V, 9 V, 8 V GS 7 V 9 9 6 V 6 6 T = 125 C C 5 V 3 3 25 C 3 V, 2 V, 1 V 4 V - 55 C 0 0 02468 10 02 46 8 V - Drain-to-Source Voltage (V) DS V - Gate-to-Source Voltage (V) GS Output Characteristics Transfer Characteristics www.vishay.com Document Number: 71796 2 S11-2000-Rev. F, 10-Oct-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 I - Drain Current (A) D I - Drain Current (A) D