Si2319DS Vishay Siliconix P-Channel 40-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 b V (V) R () I (A) DS DS(on) Available D 0.082 at V = - 10 V - 3.0 TrenchFET Power MOSFET GS - 40 0.130 at V = - 4.5 V - 2.4 GS APPLICATIONS Load Switch TO-236 (SOT-23) G 1 3 D S 2 Top View Si2319DS (C9)* *Marking Code Ordering Information: Si2319DS-T1-E3 (Lead (Pb)-free) Si2319DS-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted A Parameter Symbol 5 s Steady State Unit V Drain-Source Voltage - 40 DS V V Gate-Source Voltage 20 GS T = 25 C - 3.0 - 2.3 A b I Continuous Drain Current (T = 150 C) D J T = 70 C - 2.4 - 1.85 A A a I - 12 Pulsed Drain Current DM b I - 1.0 - 0.62 Continuous Source Current (Diode Conduction) S T = 25 C 1.25 0.75 A b P W Power Dissipation D T = 70 C 0.8 0.48 A T , T Operating Junction and Storage Temperature Range - 55 to 150 C J stg THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit b 75 100 Maximum Junction-to-Ambient R thJA c 120 166 C/W Maximum Junction-to-Ambient R Maximum Junction-to-Foot (Drain) 40 50 thJF Notes: a. Pulse width limited by maximum junction temperature. b. Surface mounted on FR4 board, t 5 s. c. Surface Mounted on FR4 board. For Spice model information via the worldwide web: www.vishay.com/www/product/spice.htm. Document Number: 72315 www.vishay.com S09-0130-Rev. C, 02-Feb-09 1Si2319DS Vishay Siliconix SPECIFICATIONS T = 25 C, unless otherwise noted J Limits Parameter Symbol Test Conditions Min. Typ. Max. Unit Static V V = 0 V, I = - 250 A Drain-Source Breakdown Voltage - 40 DS GS D V V V = V , I = - 250 A Gate Threshold Voltage - 1 - 3.0 GS(th) DS GS D I V = 0 V, V = 20 V Gate-Body Leakage 100 nA GSS DS GS V = - 40 V, V = 0 V - 1 DS GS Zero Gate Voltage Drain Current I A DSS V = - 40 V, V = 0 V, T = 55 C - 10 DS GS J a I V - 5 V, V = - 10 V - 6 A On-State Drain Current D(on) DS GS V = - 10 V, I = - 3.0 A 0.065 0.082 GS D a R Drain-Source On-State Resistance DS(on) V = - 4.5 V, I = - 2.4 A 0.100 0.130 GS D a g V = - 5 V, I = - 3.0 A 7.0 S Forward Transconductance fs DS D a V I = - 1.25 A, V = 0 V - 0.8 - 1.2 V Diode Forward Voltage SD S GS b Dynamic Q Total Gate Charge 11.3 17 g V = - 20 V, V = - 10 V DS GS Gate-Source Charge Q 1.7 nC gs I - 3 A D Q Gate-Drain Charge 3.3 gd Input Capacitance C 470 iss C V = - 20 V, V = 0 V, f = 1 MHz Output Capacitance 85 pF oss DS GS Reverse Transfer Capacitance C 65 rss c Switching t 715 d(on) Turn-On Time V = - 20 V, R = 20 DD L t 15 25 r I - 1.0 A, V = - 4.5 V ns D GEN t 25 40 d(off) R = 6 g Turn-Off Time t 25 40 f Notes: a. Pulse test: PW 300 s duty cycle 2 %. b. For design aid only, not subject to production testing. c. Switching time is essentially independent of operating temperature. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 72315 2 S09-0130-Rev. C, 02-Feb-09