X-On Electronics has gained recognition as a prominent supplier of SI2319DS-T1-E3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SI2319DS-T1-E3 MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SI2319DS-T1-E3 Vishay

SI2319DS-T1-E3 electronic component of Vishay
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Part No.SI2319DS-T1-E3
Manufacturer: Vishay
Category: MOSFETs
Description: MOSFET 40V 3.0A 1.25W 82 mohms @ 10V
Datasheet: SI2319DS-T1-E3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.5665 ea
Line Total: USD 0.57 
Availability - 182069
Ship by Thu. 28 Nov to Mon. 02 Dec
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
84390
Ship by Mon. 02 Dec to Fri. 06 Dec
MOQ : 3000
Multiples : 3000
3000 : USD 0.3226
6000 : USD 0.3015

1
Ship by Mon. 02 Dec to Fri. 06 Dec
MOQ : 1
Multiples : 1
1 : USD 0.3316

2910
Ship by Mon. 02 Dec to Fri. 06 Dec
MOQ : 3000
Multiples : 3000
3000 : USD 0.351
6000 : USD 0.351
9000 : USD 0.351
12000 : USD 0.351
15000 : USD 0.351

341
Ship by Mon. 09 Dec to Thu. 12 Dec
MOQ : 1
Multiples : 1
1 : USD 0.9229
10 : USD 0.8072
30 : USD 0.7488
100 : USD 0.6916
500 : USD 0.4054
1000 : USD 0.3881

182069
Ship by Thu. 28 Nov to Mon. 02 Dec
MOQ : 1
Multiples : 1
1 : USD 0.5665
10 : USD 0.4763
100 : USD 0.3696
500 : USD 0.3333
1000 : USD 0.3036
3000 : USD 0.2838
6000 : USD 0.2717
9000 : USD 0.2607

2933
Ship by Thu. 28 Nov to Mon. 02 Dec
MOQ : 1
Multiples : 1
1 : USD 1.288
5 : USD 0.7504
25 : USD 0.6748
33 : USD 0.5138
90 : USD 0.4858

84390
Ship by Mon. 02 Dec to Fri. 06 Dec
MOQ : 3000
Multiples : 3000
3000 : USD 0.3226
6000 : USD 0.3015

8730
Ship by Mon. 02 Dec to Fri. 06 Dec
MOQ : 3000
Multiples : 3000
3000 : USD 0.6406

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Tradename
Configuration
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Height
Length
Series
Transistor Type
Width
Forward Transconductance - Min
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Typical Turn-On Delay Time
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the SI2319DS-T1-E3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SI2319DS-T1-E3 and other electronic components in the MOSFETs category and beyond.

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Si2319DS Vishay Siliconix P-Channel 40-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 b V (V) R () I (A) DS DS(on) Available D 0.082 at V = - 10 V - 3.0 TrenchFET Power MOSFET GS - 40 0.130 at V = - 4.5 V - 2.4 GS APPLICATIONS Load Switch TO-236 (SOT-23) G 1 3 D S 2 Top View Si2319DS (C9)* *Marking Code Ordering Information: Si2319DS-T1-E3 (Lead (Pb)-free) Si2319DS-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted A Parameter Symbol 5 s Steady State Unit V Drain-Source Voltage - 40 DS V V Gate-Source Voltage 20 GS T = 25 C - 3.0 - 2.3 A b I Continuous Drain Current (T = 150 C) D J T = 70 C - 2.4 - 1.85 A A a I - 12 Pulsed Drain Current DM b I - 1.0 - 0.62 Continuous Source Current (Diode Conduction) S T = 25 C 1.25 0.75 A b P W Power Dissipation D T = 70 C 0.8 0.48 A T , T Operating Junction and Storage Temperature Range - 55 to 150 C J stg THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit b 75 100 Maximum Junction-to-Ambient R thJA c 120 166 C/W Maximum Junction-to-Ambient R Maximum Junction-to-Foot (Drain) 40 50 thJF Notes: a. Pulse width limited by maximum junction temperature. b. Surface mounted on FR4 board, t 5 s. c. Surface Mounted on FR4 board. For Spice model information via the worldwide web: www.vishay.com/www/product/spice.htm. Document Number: 72315 www.vishay.com S09-0130-Rev. C, 02-Feb-09 1Si2319DS Vishay Siliconix SPECIFICATIONS T = 25 C, unless otherwise noted J Limits Parameter Symbol Test Conditions Min. Typ. Max. Unit Static V V = 0 V, I = - 250 A Drain-Source Breakdown Voltage - 40 DS GS D V V V = V , I = - 250 A Gate Threshold Voltage - 1 - 3.0 GS(th) DS GS D I V = 0 V, V = 20 V Gate-Body Leakage 100 nA GSS DS GS V = - 40 V, V = 0 V - 1 DS GS Zero Gate Voltage Drain Current I A DSS V = - 40 V, V = 0 V, T = 55 C - 10 DS GS J a I V - 5 V, V = - 10 V - 6 A On-State Drain Current D(on) DS GS V = - 10 V, I = - 3.0 A 0.065 0.082 GS D a R Drain-Source On-State Resistance DS(on) V = - 4.5 V, I = - 2.4 A 0.100 0.130 GS D a g V = - 5 V, I = - 3.0 A 7.0 S Forward Transconductance fs DS D a V I = - 1.25 A, V = 0 V - 0.8 - 1.2 V Diode Forward Voltage SD S GS b Dynamic Q Total Gate Charge 11.3 17 g V = - 20 V, V = - 10 V DS GS Gate-Source Charge Q 1.7 nC gs I - 3 A D Q Gate-Drain Charge 3.3 gd Input Capacitance C 470 iss C V = - 20 V, V = 0 V, f = 1 MHz Output Capacitance 85 pF oss DS GS Reverse Transfer Capacitance C 65 rss c Switching t 715 d(on) Turn-On Time V = - 20 V, R = 20 DD L t 15 25 r I - 1.0 A, V = - 4.5 V ns D GEN t 25 40 d(off) R = 6 g Turn-Off Time t 25 40 f Notes: a. Pulse test: PW 300 s duty cycle 2 %. b. For design aid only, not subject to production testing. c. Switching time is essentially independent of operating temperature. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 72315 2 S09-0130-Rev. C, 02-Feb-09

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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